MMT3798 Search Results

transistor 1431 T

Abstract: MMT3798 MMT3799 38223
Contextual Info: M O T O R O L A SC { D I O D E S / O P T O } 6367255 MOTOROLA MICRO-T continued 34 SC D Ë ' J h B b T S S S D03flE23 □ | ~ CD I O D E S / O P T O ) 34C 38223 T -J/s 7 MMT3798,99 — PNP LOW CURRENT AMPLIFIER TRANSISTOR designed for low-level, low-noise amplifier applications.

MMCM3798

Abstract: MMCM3799 MMT3798 MMT3799 X10-4
Contextual Info: MMT3798, MMT3799 SILICON MMCM3798, MMCM3799 (CERAMIC PACKAGE) PNP silicon annular micro-miniature transistors de­ signed for low-level, low-noise amplifier applications. MAXIMUM R A TIN G S Rating Symbol Value Unit 60 Vdc 60 Vdc 3 .0 Vdc 50 mAdc PJD 225

Contextual Info: MMT3798 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)50m Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)135õ I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

SILICON SMALL-SIGNAL DICE

Abstract: opto transistor 2N2605 SILICON DICE motorola
Contextual Info: MOTOROLA SC -CDIODES/OPTO} ¡ 6367255 MOTOROLA SC ~34 D E ^ L,3b7S5S DD37TÌ1 ? <DIO D E S /OPTO 34C 379g ! D SILICON SMALL-SIGNAL TRANSISTOR DICE continued) 2C3799 — d ie n o . PNP LINE SOURCE — DSL555 This die provides performance similar to that of the following device types:

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

2SA1283D

Abstract: bcw56a Motorola 2N3809 LOW-POWER SILICON PNP TO77
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 5 10 BC303-6 BC303-6 2N3579 KT214Gl BCW89 BCW89 BCW89 BCW89R BCW89R BCW89R ~~XIJ2A -15 20 25 30 - 35 40 2N4413A BSR30 BSR30 BCW56A PB6014S 2SBll16AL BC488A18 BC488A5 -SO 60 70 -80 85 -90 95 ~eelnClex See Index

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

varactor 36z

Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r

Contextual Info: MOTOROLA SC {DIO DES/OPTO} 34 6 3 6 7 2 5 5 M O T O R O L A SC MICRO-T continued DE I h3b7a55 D03fl223 □ (DIODES/OPTO) 34C 3 8 2 2 3 M M T3798,99- pnp LOW C U R R E N T AM PLIFIER TRANSISTOR designed for low-level, low-noise amplifier applications. TO P

MMCM2907

Abstract: MMCM3798 MMCM3799 MMCM3903 MMCM3904 MMT2907 MMT3798 MMT3903
Contextual Info: MMCM2907 SILICON MICRO-T PNP SILICON SWITCHING AND AMPLIFIER TRANSISTORS PNP SILICON ANNULAR TRANSISTORS . . . designed for general-purpose switching and am plifier applications, where high-density packaging is required. Space Saving Micro-Miniature Packages

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

wiring diagram audio amplifier ic 6283

Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
Contextual Info: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor