MJE703 Search Results

mje802

Abstract: transistor mje802 MJE703G MJE702 mje800 to225
Contextual Info: MJE700, MJE702, MJE703 PNP - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC

mje803

Abstract: MJE703 transistor 2A 3v
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector–Emitter Breakdown Voltage— : V BR CEO = 80 V ·DC Current Gain— : hFE = 750(Min) @ IC= 2A = 100(Min) @ IC= 4A ·Complement to Type MJE703

MJFR

Abstract: JE700 MJE302 JE801 JE300 MJC800 MJ6703 AAJC703 mje801 MJE703
Contextual Info: PNP MJE700, T thru MJE703, T NPN MJE800, T thru MJE803, T 4 0 AM PERE P L A S T IC D A R L IN G T O N C O M P L E M E N T A R Y D A R L IN G T O N S IL IC O N P O W E R T R A N S IS T O R S P O W E R T R A N S IS T O R S C O M P L E M E N T A R Y S IL IC O N

100 amp npn darlington power transistors

Abstract: complementary npn-pnp 500 watt power circuit diagram to225 10 amp npn darlington power transistors 16 amp npn darlington power transistors darlington complementary power amplifier SILICON COMPLEMENTARY transistors darlington Darlington transistors 703 H
Contextual Info: MJE700, MJE702, MJE703 PNP - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC

MJE703

Abstract: MJE800 MJE802 MJE803 MSD6100 1N5825 MJE700 MJE700G MJE702 NEW TRANSISTOR
Contextual Info: MJE700, MJE702, MJE703 PNP - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC

to225

Abstract: MJE802 MJE800 MJE702 MJE703 mje802g MJE803 MJE700 to-225 MJE700G
Contextual Info: MJE700, MJE702, MJE703 PNP - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC

Contextual Info: MJE700G, MJE702G, MJE703G PNP , MJE800G, MJE802G, MJE803G (NPN) Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC

JE700

Abstract: MJE700 MJE701 MJE702 MJE703 MJE800 MJE801 MJE802 MJE803 JE703
Contextual Info: MJE700 thru MJE703 PNP SILICON MJE800 th,uMJE803 NPN 4.0 A M P E R E PLASTIC MEDIUM-POW ER C O M PLEM EN T A R Y SILIC O N T R A N SIST O R S . . . designed to replace discrete driver and o u tp u t stages in co m p le ­ m entary a u d io am plifier applications.

1N5825

Abstract: MJE700 MJE702 MJE703 MJE800 MJE802 MJE803 MSD6100 to225a
Contextual Info: ON Semiconductort PNP MJE700 Plastic Darlington Complementary Silicon Power Transistors MJE702 MJE703 NPN . . . designed for general–purpose amplifier and low–speed switching applications. MJE800 • High DC Current Gain — • • MJE802 hFE = 2000 Typ @ IC

Complementary Darlington Audio Power Amplifier

Abstract: MJE700T MJE700 MJE701T MJE702 MJE702T MJE703T MJE800T MJE802T MJE803T
Contextual Info: c o lt r a i MJE700T THRU MJE703T PNP MJE800T THRU MJE803T NPN s e m i c o n d u - v * *&«•*j centrai Sem iconductor Corp. Central Sem iconductor Corp. Central Sem iconductor Corp. ♦I ! SILICON POWER DARLINGTON COMPLEMENTARY TRANSISTORS JEDEC T0-220AB CASE

MJE700G

Abstract: MJE700 1N5825 MJE702 MJE703 MJE800 MJE802 MJE803 MSD6100 TO-225
Contextual Info: MJE700, MJE702, MJE703 PNP − MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC

MJE801

Abstract: MJE802 JE700 MJE703 je802 MJE800 MJE803 transistor mje802 TRANSISTOR JC 515 MJE701
Contextual Info: MJE700 thru MJE703 PNP SILICON MJE800 th,uMJE803 NPN 4.0 AMPERE PLASTIC MEDIUM-POW ER C O M PLEM EN T A R Y SILIC O N T R A N SIST O R S . . . designed to replace discrete driver and o u tp u t stages in co m p le ­ m entary a u d io am plifier applications.

NT 407 F TRANSISTOR TO 220

Abstract: NT 407 F TRANSISTOR npn transistor nt 407 f MJE700T 80 amp 30v npn darlington 10 amp npn darlington power transistors MJE701 MJE701T NPN/NT 407 F TRANSISTOR MJE703T
Contextual Info: ÆàMOSPEC PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . designed for general-purpose and low-speed switching application. MAXIMUM RATINGS Sym bol MJE700T MJE701T MJE800T MJE801T MJE702T MJE703T MJE802T MJE803T Unit Collector-Emitter Voltage

MJE700

Abstract: MJE702 MJE703 MJE800 MJE802 MJE803 MSD6100 1N5825
Contextual Info: ON Semiconductor PNP MJE700 Plastic Darlington Complementary Silicon Power Transistors MJE702 MJE703 NPN . . . designed for general–purpose amplifier and low–speed switching applications. MJE800 • High DC Current Gain — • • MJE802 hFE = 2000 Typ) @ IC

transistor mje802

Contextual Info: ON Semiconductor PNP MJE700 Plastic Darlington Complementary Silicon Power Transistors MJE702 MJE703 NPN . . . designed for general−purpose amplifier and low−speed switching applications. MJE800 • High DC Current Gain — • • MJE802 hFE = 2000 Typ) @ IC

MJE701

Abstract: MJE800 MJE802 Complementary Darlington Audio Power Amplifier MJE700 MJE702 MJE703 MJE801 MJE803
Contextual Info: Datasheet Contini MJE700 THRU MJE703 PNP MJE800 THRU MJE803 NPN Semiconductor Corp. SILICON POWER DARLINGTON COMPLEMENTARY TRANSISTORS 145 A d a m s Avenue, Hauppauge, NY 11788 U S A Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO— 126 CASE Manufacturers of World Class Discrete Semiconductors

Contextual Info: MJE700, MJE702, MJE703 PNP - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

fjaf6812

Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
Contextual Info: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320

702 A TRANSISTOR

Abstract: TRansistor 701 702 P TRANSISTOR
Contextual Info: MJE700/701/702/703 MJE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to MJE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor

tip122 tip127 audio amp schematic

Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Contextual Info: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.