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MJE800 Datasheets (34)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MJE800	Fairchild Semiconductor	NPN Epitaxial Silicon Darlington Transistor	Original	PDF	52.07KB	4
MJE800	Motorola	PLASTIC DARLINGTON COMPLENTARY SILICON POWER TRANSISTORS	Original	PDF	261.1KB	6
MJE800	On Semiconductor	Plastic Darlington Complementary Silicon Power Transistors	Original	PDF	82.79KB	6
MJE800	On Semiconductor	Plastic Darlington Complementary Silicon Power Transistor	Original	PDF	98.92KB	8
MJE800	Central Semiconductor	Silicon Power Darlington Complementary Transistors, TO-126	Scan	PDF	60.42KB	1
MJE800	Central Semiconductor	POWER DARLINGTON TRANSISTORS (EPOXY)	Scan	PDF	375.07KB	4
MJE800	Motorola	Semiconductor Data Library Volume 3 1974	Scan	PDF	79.76KB	2
MJE800	Motorola	European Master Selection Guide 1986	Scan	PDF	35.1KB	1
MJE800	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF	320.59KB	7
MJE800	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	107.96KB	1
MJE800	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	116.49KB	1
MJE800	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF	87.4KB	1
MJE800	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	37.38KB	1
MJE800	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF	55.55KB	1

MJE800	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF	48.49KB	1
MJE800	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	158.83KB	1
MJE800	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	156.66KB	1
MJE800	Unknown	Transistor Replacements	Scan	PDF	88.52KB	1
MJE800	Unknown	Cross Reference Datasheet	Scan	PDF	37.82KB	1
MJE800	National Semiconductor	NPN Transistors / DARLINGTON	Scan	PDF	146.06KB	4

MJE800 Price and Stock

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onsemi MJE800STU - Rail/Tube (Alt: MJE800STU)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	MJE800STU	Tube			1,920	1 - 10 - 100 - 1000 - 10000 $2.88	Get Quote
Flip Electronics	MJE800STU		2,477			1 $2.23 10 $2.23 100 $2.23 1000 $2.23 10000 $2.23	Get Quote
Fairchild Semiconductor Corporation MJE800STU Trans Darlington NPN 60V 4A 40000mW 3-Pin TO-126 Tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MJE800STU		130			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Others MJE800 Trans Darlington NPN 60V 4A 40000mW 3-Pin(3+Tab) TO-225 Box
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MJE800		80		1	1 $4.56 10 $2.96 100 $2.14 1000 $2.14 10000 $2.14	Buy Now
Quest Components	MJE800		64			1 $6.00 10 $3.00 100 $3.00 1000 $3.00 10000 $3.00	Buy Now
Component Electronics, Inc	MJE800		9			1 $1.15 10 $1.15 100 $0.87 1000 $0.75 10000 $0.75	Buy Now
onsemi MJE800 Trans Darlington NPN 60V 4A 40000mW 3-Pin(3+Tab) TO-225 Box
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MJE800		18			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Motorola Semiconductor Products MJE800 TRANSISTOR,BJT,DARLINGTON,NPN,60V V(BR)CEO,4A I(C),TO-126
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	MJE800		123			1 $0.80 10 $0.64 100 $0.48 1000 $0.48 10000 $0.48	Buy Now

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MJE800 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
mje802 Abstract: transistor mje802 MJE703G MJE702 mje800 to225 Contextual Info: MJE700, MJE702, MJE703 PNP - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC	Original	mje700 mje702 mje703 mje800 +5mje802 mje803 transistor mje802 mje703g to225	PDF
JE802 Contextual Info: NPN EPITAXIAL MJE800/801/803 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 I c= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • C om plem ent to M JE700/701/702/703 ABSOLUTE MAXIMUM RATINGS Characteristic	OCR Scan	mje800/801/803 je700/701/702/703 mje800/801 je802/803 +250fia je802	PDF
702 A TRANSISTOR Abstract: TRansistor 701 702 P TRANSISTOR Contextual Info: MJE700/701/702/703 MJE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to MJE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor	Original	mje700/701/702/703 mje800/801/802/803 o-126 mje700/701 +5mje702/703 mje703stu 702 a transistor transistor 701 702 p transistor	PDF
702 TRANSISTOR Abstract: ic 701 fairchild TRansistor 701 702 pnp 702 Fairchild ic 701 transistor 702 701 ic MJE700 Contextual Info: PNP EPITAXIAL MJE700/701/702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 IC= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS TO-126 • Complement to MJE800/801/802/803 ABSOLUTE MAXIMUM RATINGS Characteristic	Original	mje700/701/702/703 o-126 mje800/801/802/803 mje700/701 +10mje702/703 702 transistor ic 701 fairchild transistor 701 702 pnp 702 fairchild ic 701 transistor 702 701 ic mje700	PDF
MJFR Abstract: JE700 MJE302 JE801 JE300 MJC800 MJ6703 AAJC703 mje801 MJE703 Contextual Info: PNP MJE700, T thru MJE703, T NPN MJE800, T thru MJE803, T 4 0 AM PERE P L A S T IC D A R L IN G T O N C O M P L E M E N T A R Y D A R L IN G T O N S IL IC O N P O W E R T R A N S IS T O R S P O W E R T R A N S IS T O R S C O M P L E M E N T A R Y S IL IC O N	OCR Scan	mje700 mje703 mje800 mje803 +13mic700 mje701 mjcs01 mje707 aajc703 mjfr je700 mje302 je801 je300 mjc800 mj6703 mje801	PDF
transistor kt 801 Abstract: S/transistor kt 801 KT 802 transistor a05 801 Contextual Info: SAMSUNG S E MI CONDUCTOR INC MJE800/801/802/803 IME O \| 7^4145 000770b NPN EPITAXIAL r - 33 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hpE—750 @ lc= —1.5 and -2 .0 A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS TO-126 • Complementary to MJE700/701/702/703	OCR Scan	mje800/801/802/803 000770b o-126 mje700/701/702/703 +8mje800/801 mje802/803 mjeo00/801 gqg77fe transistor kt 801 s/transistor kt 801 kt 802 transistor a05 801	PDF
Contextual Info: MJE800/801/803 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 I C= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS TO-126 • Complement to MJE700/701/702/703 ABSOLUTE MAXIMUM RATINGS Characteristic	Original	mje800/801/803 o-126 mje700/701/702/703 mje800/801 +1mje802/803	PDF
8115, transistor Abstract: JE700 je800 8115 TRANSISTOR 10 amp npn darlington power transistors 50-WATT MJE603 JE701 MJE700T mje801 Contextual Info: MOTORGLA SC 1SE D I b3b?2SM 0005333 fl XSTRS/R F I T-33-33 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP NPN MJE700J thru MIE703 MJE800J thru MJE803 4.0 AMPERE PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed fo r general-purpose am p lifie r and low-speed switching	OCR Scan	t-33-33 mje700j mie703 mje800j +14mje803 q0as33b mje703 mje800 8115, transistor je700 je800 8115 transistor 10 amp npn darlington power transistors 50-watt mje603 je701 mje700t mje801	PDF
100 amp npn darlington power transistors Abstract: complementary npn-pnp 500 watt power circuit diagram to225 10 amp npn darlington power transistors 16 amp npn darlington power transistors darlington complementary power amplifier SILICON COMPLEMENTARY transistors darlington Darlington transistors 703 H Contextual Info: MJE700, MJE702, MJE703 PNP - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC	Original	mje700 mje702 mje703 mje800 +12mje802 mje803 100 amp npn darlington power transistors complementary npn-pnp 500 watt power circuit diagram to225 10 amp npn darlington power transistors 16 amp npn darlington power transistors darlington complementary power amplifier silicon complementary transistors darlington darlington transistors 703 h	PDF
JE800 Abstract: JE702 mje800 JE700 Contextual Info: f Z 7 SCS-THOMSON ^ 7 # fifflD æ m iC T «! S_G MJ E800/1 /2/3 MJE700/1/2/3 S-TH O M S O N 3GE ]> MEDIUM POWER DARLINGTONS D ESCRIPTIO N The MJE800, MJE801, MJE802 and MJE803 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are moun	OCR Scan	e800/1 mje700/1/2/3 mje800 mje801 +9mje802 mje803 o-126 mje700 mje701 mje702 je800 je702 je700	PDF
JE801 Abstract: JE700 transistor H 802 y 803 Contextual Info: NPN EPITAXIAL MJE800/801/803 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 b= -1 -5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • C om plem ent to M JE 700/701/702/703 ABSOLUTE MAXIMUM RATINGS Characteristic	OCR Scan	mje800/801/803 mje800/801 mje802/803 je801 +3je700 transistor h 802 y 803	PDF
ic 803 Abstract: mje800 mje802 Contextual Info: SavantIC Semiconductor Product Specification MJE800/801/802/803 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type MJE700/701/702/703 ·High DC current gain ·DARLINGTON APPLICATIONS ·Designed for general–purpose amplifier	Original	mje800/801/802/803 o-126 mje700/701/702/703 mje800/801 +6mje802/803 mje800/802 mje801/803 ic 803 mje800 mje802	PDF
702 TRANSISTOR Abstract: 702 pnp ON 001 702 transistor k 702 Contextual Info: MJE700/701/702/703 MJE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to MJE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor	Original	mje700/701/702/703 mje800/801/802/803 o-126 mje700/701 +5mje702/703 702 transistor 702 pnp on 001 702 transistor k 702	PDF
MJE703 Abstract: MJE800 MJE802 MJE803 MSD6100 1N5825 MJE700 MJE700G MJE702 NEW TRANSISTOR Contextual Info: MJE700, MJE702, MJE703 PNP - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC	Original	mje700 mje702 mje703 mje800 +6mje802 mje803 msd6100 1n5825 mje700g new transistor	PDF

transistor H 802 Abstract: 702 TRANSISTOR npn 702 P TRANSISTOR obsolete ic cross reference 702 Fairchild Contextual Info: MJE800/801/802/803 MJE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to MJE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor	Original	mje800/801/802/803 mje700/701/702/703 o-126 mje800/801 +7mje802/803 e800stu transistor h 802 702 transistor npn 702 p transistor obsolete ic cross reference 702 fairchild	PDF
MJE800 Abstract: ic 803 Contextual Info: MJE800/801/802/803 MJE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to MJE700/701/702/703 TO-126 1 1 . Emitter 2. Collector 3. Base NPN Epitaxial Silicon Darlington Transistor	Original	mje800/801/802/803 mje700/701/702/703 o-126 mje800/801 +3mje802/803 mje800 ic 803	PDF
MJE800 Abstract: TRANSISTOR S 802 MJE800/801/803 equivalent Contextual Info: MJE800/801/802/803 MJE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to MJE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor	Original	mje800/801/802/803 mje700/701/702/703 o-126 mje800/801 +5mje802/803 mje802stu mje800 transistor s 802 mje800/801/803 equivalent	PDF
Contextual Info: MJE700G, MJE702G, MJE703G PNP , MJE800G, MJE802G, MJE803G (NPN) Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC	Original	mje700g mje702g mje703g mje800g +5mje802g mje803g mje700 mje800 mje700/d	PDF
JE700 Abstract: MJE700 MJE701 MJE702 MJE703 MJE800 MJE801 MJE802 MJE803 JE703 Contextual Info: MJE700 thru MJE703 PNP SILICON MJE800 th,uMJE803 NPN 4.0 A M P E R E PLASTIC MEDIUM-POW ER C O M PLEM EN T A R Y SILIC O N T R A N SIST O R S . . . designed to replace discrete driver and o u tp u t stages in co m p le m entary a u d io am plifier applications.	OCR Scan	mje700 mje703 mje800 mje803 +6mje701 mje801 mje702 mje802 je700 je703	PDF
1N5825 Abstract: MJE700 MJE702 MJE703 MJE800 MJE802 MJE803 MSD6100 to225a Contextual Info: ON Semiconductort PNP MJE700 Plastic Darlington Complementary Silicon Power Transistors MJE702 MJE703 NPN . . . designed for general–purpose amplifier and low–speed switching applications. MJE800 • High DC Current Gain — • • MJE802 hFE = 2000 Typ @ IC	Original	mje700 mje702 mje703 mje800 +7mje802 mje803 r14525 mje700/d 1n5825 msd6100 to225a	PDF
Complementary Darlington Audio Power Amplifier Abstract: MJE700T MJE700 MJE701T MJE702 MJE702T MJE703T MJE800T MJE802T MJE803T Contextual Info: c o lt r a i MJE700T THRU MJE703T PNP MJE800T THRU MJE803T NPN s e m i c o n d u - v * &«•j centrai Sem iconductor Corp. Central Sem iconductor Corp. Central Sem iconductor Corp. ♦I ! SILICON POWER DARLINGTON COMPLEMENTARY TRANSISTORS JEDEC T0-220AB CASE	OCR Scan	mje700t mje703t mje800t mje803t +7t0-220ab mje700 mje702 complementary darlington audio power amplifier mje701t mje702t mje802t	PDF
MJE700G Abstract: MJE700 1N5825 MJE702 MJE703 MJE800 MJE802 MJE803 MSD6100 TO-225 Contextual Info: MJE700, MJE702, MJE703 PNP − MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC	Original	mje700 mje702 mje703 mje800 +6mje802 mje803 mje700g 1n5825 msd6100 to-225	PDF
MJE801 Abstract: MJE802 JE700 MJE703 je802 MJE800 MJE803 transistor mje802 TRANSISTOR JC 515 MJE701 Contextual Info: MJE700 thru MJE703 PNP SILICON MJE800 th,uMJE803 NPN 4.0 AMPERE PLASTIC MEDIUM-POW ER C O M PLEM EN T A R Y SILIC O N T R A N SIST O R S . . . designed to replace discrete driver and o u tp u t stages in co m p le m entary a u d io am plifier applications.	OCR Scan	mje700 mje703 mje800 mje803 +9mje701 mje801 mje702 mje802 iseean-415 je700 je802 transistor mje802 transistor jc 515	PDF
NT 407 F TRANSISTOR TO 220 Abstract: NT 407 F TRANSISTOR npn transistor nt 407 f MJE700T 80 amp 30v npn darlington 10 amp npn darlington power transistors MJE701 MJE701T NPN/NT 407 F TRANSISTOR MJE703T Contextual Info: ÆàMOSPEC PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . designed for general-purpose and low-speed switching application. MAXIMUM RATINGS Sym bol MJE700T MJE701T MJE800T MJE801T MJE702T MJE703T MJE802T MJE803T Unit Collector-Emitter Voltage	OCR Scan	mje700t mje701t mje800t mje801t +11mje702t mje703t mje802t mje803t nt 407 f transistor to 220 nt 407 f transistor npn transistor nt 407 f 80 amp 30v npn darlington 10 amp npn darlington power transistors mje701 npn/nt 407 f transistor	PDF

MJE800 Search Results

MJE800 Datasheets (34)

MJE800 Price and Stock

onsemi MJE800STU

Fairchild Semiconductor Corporation MJE800STU

Others MJE800

onsemi MJE800

Motorola Semiconductor Products MJE800

MJE800 Datasheets Context Search

mje802

JE802

702 A TRANSISTOR

702 TRANSISTOR

MJFR

transistor kt 801

8115, transistor

100 amp npn darlington power transistors

JE800

JE801

ic 803

702 TRANSISTOR

MJE703

transistor H 802

MJE800

MJE800

JE700

1N5825

Complementary Darlington Audio Power Amplifier

MJE700G

MJE801

NT 407 F TRANSISTOR TO 220