MGF0906B Search Results

Contextual Info: MGF0906B Transistors N-Channel UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V)-15 I(D) Max. (A)3.0 P(D) Max. (W)23 Maximum Operating Temp (øC)175 I(DSS) Min. (A)2.0Â I(DSS) Max. (A)3.0 @V(DS) (V) (Test Condition)3.0 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.

mitsubishi

Abstract: MGF0906B MGF0906 Band Power GaAs FET
Contextual Info: MITSUBISHI ELECTRIC June/2004 MITSUBISHI ELECTRIC June/2004 MITSUBISHI ELECTRIC June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0906B L, S BAND POWER GaAs FET MITSUBISHI ELECTRIC June/2004

MGF0906B

Contextual Info: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0906B for Freq.=2.11-2.17GHz band SUMMARY: This application note show the RF characteristics data of MGF0906B － － Sample history:

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0906B L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING The MGFQ9Q6B, GaAs FET w ith an N-charmel schottky gate, is designed fo r use in UHF band amplifiers. Unit : m illim e te rs FEATURES • • Class A operation

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0906B L, S BAND POW ER GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 0 9 0 6 B , GaAs FET w ith an N -channel schottky U n it: m illim e te rs gate, is designed fo r use in U H F band am plifiers. FEATURES • Class A operation

MGF0906B

Contextual Info: < High-power GaAs FET small signal gain stage > MGF0906B L & S BAND / 5W non - matched DESCRIPTION The MGF0906B, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES • Class A operation  High output power P1dB=37.0dBm(TYP.) @f=2.3GHz

MGF0907

Abstract: MGF0907b MGF0906B
Contextual Info: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0907B for Freq.=2.11-2.17GHz band SUMMARY: This application note show the RF characteristics data of MGF0906B － － Sample history:

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0906B L, S BAND POW ER GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 0 9 0 6 B , GaAs FET w ith an N-channel schottky Unit: millimeters gate, is designed for use in UH F band amplifiers. 17.5 FEATURES • Class A operation

Contextual Info: < High-power GaAs FET small signal gain stage > MGF0906B L & S BAND / 5W non - matched DESCRIPTION The MGF0906B, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES • Class A operation  High output power P1dB=37.0dBm(TYP.) @f=2.3GHz

MGF4919G

Abstract: SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60
Contextual Info: МИКРОСХЕМЫ ТРАНЗИСТОРЫ 1 2 ВЫСОКОВОЛЬТНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ CoolMOS CoolMOS полевые транзисторы Infineon – это новое поколение высоковольтных силовых транзисторов со сверхнизким сопротивлением в открытом состоянии

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> | M G F0906B | _ L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 0 9 0 6 B , GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. I S Unit: millimeters 17.5 FEATURES

MGF2430A

Abstract: MGF4714AP MGF4914D MGF4919 MGF1402B MGF2430 MGF1923 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> APPLICATION NOTE RECOMMENDED LINE-UP FOR LOW NOISE DEVICES APPLICATION NOTE 1. Recommended Line-Up 1.1 Line-up for 12G Hz Band Converter W G - M IC CO NVERTER RF AM P 1ST STAGE M IX E R 2N D S T A G E IF A M P 3R D S T A G E

C42V5964

Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION

M52777SP

Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Contextual Info: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30

MGF4937

Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Contextual Info: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed

MGFS45H2201G

Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
Contextual Info: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety