MG75J1 Search Results

Contextual Info: T O SH IB A MG75J1BS11 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 7 5 J 1 BS1 1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm • High Input Impedance • H ighSpeed • Low Saturation Voltage : VQE sat = 2.7V (Max.) (Iq = 75A)

MG75J1ZS50

Abstract: ZS50 MG75J1Z 4A05 diode
Contextual Info: TOSHIBA MG75J1ZS50 MG75J1 ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 2-FAST-ON-TAB #110 The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One

Contextual Info: MG75J1ZS40 TOSHIBA TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Mr;7SM7<;An • v ■ 'w m wmr v ■ v ■ w Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • High Input Impedance • High Speed : tf=0.35^/s Max. trr = 0.15^8 (Max.)

Contextual Info: TO SH IBA MG75J1ZS50 MG75J1 ZS50 T O S H IB A GTR M O D U L E SILICO N N C H A N N E L IGBT H IG H P O W E R SW IT C H IN G APPLICATIO N S. M O T O R C O N T R O L APPLIC ATIO N S. The Electrodes are Isolated from Case. High Input Impedance Includes a Complete H alf Bridge in One

MG75J1ZS40

Abstract: ZS40
Contextual Info: TOSHIBA MG75J1ZS40 MG75J1 ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. 2-FAST-ON-TAB #110 MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf= 0.35,«s Max. trr = 0.15/^ (Max.) Low Saturation Voltage

Contextual Info: T O S H IB A MG75J1ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75J1 ZS50 HIGH PO W ER SWITCHING APPLICATIONS. U nit in mm MOTOR CONTROL APPLICATIONS. 2-FAST-ON-TAB #110 • The Electrodes are Isolated from Case. • High Input Impedance • Includes a Complete H alf Bridge in One

MG75J1ZS50

Contextual Info: MG75J1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG75J1ZS50 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode

diode 083

Abstract: MG75J1ZS40
Contextual Info: MG75J1ZS40 TOSHIBA GTR Module Silicon N Channel IGBT MG75J1ZS40 Unit: mm High Power Switching Applications Motor Control Applications High input impedance High speed : tf = 0.35µs Max trr = 0.15µs (Max) Low saturation voltage : VCE (sat) = 3.5V (Max) Enhancement-mode

Contextual Info: T O SH IB A MG75J1ZS40 MG75J1 ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. 2-FAST-ON-TAB #110 MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf= 0.35/«s Max. trr = 0.15/^s (Max.) Low Saturation Voltage

LOTA

Abstract: MG75J1BS11 tcp 8005 2-33F1A
Contextual Info: MG75J1BS11 TOSHIBA M G 7 5 J 1 BS1 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • High Input Impedance • HighSpeed : tf= 1.0/^s Max. (I0 = 75A) • Low Saturation Voltage : VCE(sat)= 2.7V (Max.) (I0 = 75A)

Contextual Info: MG75J1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG75J1ZS50 Unit: mm High Power Switching Applications Motor Control Applications l The electrodes are isolated from case. l High input impedance l Includes a complete half bridge in one package. l Enhancement-mode

MG75J1BS11

Abstract: TOSHIBA IGBT DATA BOOK TOSHIBA IGBT
Contextual Info: MG75J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG75J1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C

MG75J1ZS50

Contextual Info: MG75J1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG75J1ZS50 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode

Contextual Info: T O S H IB A MG75J1ZS50 MG75J1 ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • 2-FAST-ON-TAB #110 The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One

PTS100

Contextual Info: TOSHIBA MG75J1ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. The Electrodes are Isolated from Case. High Input Impedance Includes a Complete H alf Bridge in One Package. Enhancement-Mode High Speed : tf= 0 ,3 0 ^ s MAX. Gc = 75A)

Contextual Info: MG75J1ZS50 — H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S . M O T O R C O N T R O L A P P L IC A T IO N S. • • • • • The Electrodes are Isolated from Case. High Inpul Impedance Enhancement-M ode High Speed : tf= 0.30/js MAX. (I q = 75A)

MG150N2YS40

Abstract: MG100J2YS45 mg75j2ys40 MG150J2YS40 MG15N6ES42 MG100G2YS1 mg75n2ys40 mg25n2ys40 MG200J2YS40 MG50J6ES40
Contextual Info: Connection Maximum Bating VCES V ICÌAÌ 8 15 25 G T15J101* eoo G T8J101* G T8J102(SM )* G T15J102* GT15J103(SMJ* 50 75 G T60J101* <60A) G T 80J101* GT50J1Û2+ (80A) M G 50 J1B S 1 1 MG75J1SB11 100 150 200 300 400 500 G T50J101* Q T25J101* MG25J1BS11 MG100J1BS11 MG150J1BS11

Contextual Info: T O SH IB A MG75J1BS11 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 7 5 J 1 BS1 1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm • High Input Impedance • H ighSpeed • Low Saturation Voltage : VQE sat = 2.7V (Max.) (Iq = 75A)

Contextual Info: TOSHIBA MG75J1BS11 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75I1R<;11 • vH m wm r v ■ mmr wêêf m m HIGH POWER SWITCHING APPLICATIONS. U n it in mm MOTOR CONTROL APPLICATIONS. • High Input Impedance • High Speed : t f —l.O/zsiMax. Iq —75A)

Contextual Info: T O SH IB A MG75J1ZS40 MG75J1 ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. 2-FAST-ON-TAB #110 MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf= 0.35/«s Max. trr = 0.15/^s (Max.) Low Saturation Voltage

MG75J1BS11

Contextual Info: MG75J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG75J1BS11 High Power Switching Applications Motor Control Applications l Enhancement-mode l The electrodes are isolated from case. Unit: mm Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C

S5J53

Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
Contextual Info: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction

GT250101

Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
Contextual Info: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a

MG40001US41

Abstract: MG806ES42 MG15J6ES40 MG75J2YS50 MG100Q2YS42 mg300q1us41 MG50Q2YS40 mg150j1 MG100J2YS50
Contextual Info: Promotion Line-up Discretes s s i s « I I 1 S 1 * III » 5-5 -OIlfOh- I1! S3 « 13If*Sm * ¡1 If «C * sSagafS & S5 é<5£ 2* If o^ • Ifii O£K D 3 ilif £ § Iti o p I| § 1 5«SS is y— § 8 I 1 •Sf11 4 î $ Ì.W « »a N n 1M 1« m us YS MG40J2YS50