LWE201 Search Results
LWE201 Datasheets (7)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| LWE2010S | Philips Semiconductors | NPN microwave power transistor | Original | 72.67KB | 12 | ||
| LWE2010S | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 40.75KB | 1 | ||
| LWE2010S | Philips Semiconductors | NPN microwave power transistor | Scan | 189.62KB | 7 | ||
| LWE2015R | Philips Semiconductors | NPN microwave power transistor | Original | 60.47KB | 12 | ||
| LWE2015R | Philips Semiconductors | Microwave Linear Power Transistor | Original | 115.43KB | 5 | ||
| LWE2015R | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 42.05KB | 1 | ||
| LWE2015R | Philips Semiconductors | NPN microwave power transistor | Scan | 142.5KB | 6 |
LWE201 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
LWE2015R
Abstract: SC15
|
Original |
lwe2015rot446asca53127147/00/02/pp12+1 | |
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Contextual Info: L _ _ _ _ _ N AMER PHILIPS/DISCRETE ObE D • bbSB'lBl O O l S O n & _ ■ LWE2015R y y P 2 i - o r MICROWAVE LINEAR POWER TRANSISTOR N-P-N silicon power transistor for use in a common-emitter, class-A amplifier up to 2,3 GHz in c.w. |
OCR Scan |
lwe2015rs3t31dq1s033 | |
transistor eb 102Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LWE2015R FEATURES PINNING - SOT446A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR |
OCR Scan |
lwe2015rot446atransistor eb 102 | |
sot446
Abstract: LWE2010S SC15 SOT446A
|
Original |
lwe2010ssca53127147/00/02/pp12sot446+2 | |
copper permittivity
Abstract: SOT446A erie feedthrough capacitors SC15
|
OCR Scan |
lwe201ot446a110macopper permittivity+3 | |
SOT446A
Abstract: LWE2015R
|
OCR Scan |
lwe2015rot446asot446a | |
BPW22A
Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
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OCR Scan |
bs9000d3007he4000b80ribution+10 | |
epsilam 10
Abstract: sot446 CMA110 SC1S
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OCR Scan |
ot446alwe2010slwe201epsilam 10+3 | |
Philips Semiconductors Selection Guide
Abstract: LTE42005S BLS2731-10
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OCR Scan |
rx1214b80wrx1214b130yrx1214b170wrx1214b300y+8 | |
bf0262a
Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
|
OCR Scan |
1n8211n821a1n8231n823a+16 | |
transistor f6 13003
Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
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OCR Scan |
sc08btransistor f6 13003equivalent transistor bj 131-6transistor eb 13003 bm+7 | |
LFE15
Abstract: LAE4001R BLS2731-50 BLS2731-10
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OCR Scan |
bls2731-10bls2731-20bls2731-50bls2731-110+8 | |
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Contextual Info: Philips Semiconductors Concise Catalogue 1996 DISCRETE SEMICONDUCTORS Microwave transistors RF & MICROWAVE SEMICONDUCTORS & MODULES CONTINUOUS POWER TYPES f ^CE *C P r L1 ^ Gp° 3 GHz) (V) (mA) (mW) (dB) 1 2 2 2 2.1 2.1 2.1 2.3 2.3 4 4 4.2 4.2 4.2 20 18 |
OCR Scan |
lee1015talbe2003slbe2009slce2009s+6 | |
LTE-3201
Abstract: FO-163 lte4002s LBE2003S LBE2009S LCE2003S LCE2009S LTE21009R LUE2009S
|
OCR Scan |
bs3t31d01fc6000qot-100+11 | |
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FET BFW10
Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
|
OCR Scan |
ba220ba221ba223ba281+16 | |
1B200Y
Abstract: MRB11040W
|
OCR Scan |
rz2731b16wrz3135b14wrz2731b32wrz3135b28w+8 | |
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Contextual Info: N AMER PHILIPS/DISCRETE E5E D btiS3131 DOltEBS S • T -Z S-O l Power Devices MICROWAVE TRANSISTORS LINEAR POWER TRANSISTORS TYPE NO. PACKAGE OUTLINE f Vce GHZ y f” Tc ' (mAX ' - - PL1<i. (W Gpo* (dB) CLASS A, MEDIUM POWER LAE6000Q LBE2003S LCE2003S |
OCR Scan |
btis3131lae6000qlbe2003slce2003s+6 | |
TXD10K40
Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
|
OCR Scan |
bbs3131blu521n321byw56+13 | |
LWE2015RContextual Info: Az_ N AMER P H I L I P S / D I S C R E T E OLE D • bbSBTBl □QlSQl'i 6 ■ LWÊ2015R ^ r - ^ - o s r MICROWAVE LINEAR POWER TRANSISTOR N-P-N silicon power transistor for use in a common-emitter, class-A amplifier up to 2,3 GHz in c.w. |
OCR Scan |
01sq1ci2015rg01s053lwe2015r+1 | |
1721E50R
Abstract: Marking Codes Philips MARKING CODE 2327E40R marking codes transistors LAE4001R transistor 502 r8 marking marking Code philips
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OCR Scan |
lae4001rlae4002slbe2003slbe2009s+14 | |