transistor eb 102
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LWE2015R FEATURES PINNING - SOT446A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR
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Contextual Info: PACKAGE OUTLINES Page SOTIOO 348 SOT122A 349 SOT422A 350 SOT423A 351 SOT437A 352 SOT439A 353 SOT440A 354 SOT441A 355 SOT442A 356 SOT443A 357 SOT445A 358 SOT445B 359 SOT446A 360 SOT447A 361 SOT448A 362 SOT469A 363 Philips Semiconductors Microwave transistors
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ot122aot422aot423aot437a+6ot439aot440aot441aot442aot443aot445a
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SOT446A
Abstract: LWE2015R
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LWE2015R PINNING - SOT446A FEATURES • In te rd ig ita te d s tru c tu re p ro v id e s high e m itte r e ffic ie n c y PIN • D iffu se d e m itte r b a lla s tin g re s is to r p ro v id e s e x c e lle n t
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TRANSISTOR SMD MARKING CODE NM
Abstract: philips capacitor part numbering system SOT123 transistor marking 04 smd-transistor DATA BOOK TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE wps DIODE marking EG 83A 2N2219 JANTX sot391 small signal transistor marking codes
Contextual Info: DISCRETE SEMICONDUCTORS General 2000 Feb 29 Philips Semiconductors General QUALITY By means of failure-mode-and-effect analysis the critical parameters of a process are identified. Procedures are then laid down to ensure the highest level of performance for these parameters. The capability of process steps is
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mc34032n22191n4148mbc775+10transistor smd marking code nmphilips capacitor part numbering systemsot123 transistor marking 04smd-transistor data booktransistor smd marking code kftransistor smd marking code wpsdiode marking eg 83a2n2219 jantxsot391small signal transistor marking codes
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epsilam 10
Abstract: sot446 CMA110 SC1S
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very
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ot446alwe2010slwe201epsilam 10+3sot446cma110sc1s
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LWE2015R
Abstract: SC15
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LWE2015R NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor
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lwe2015rot446asca53127147/00/02/pp12+1sc15
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Contextual Info: Philips Semiconductors Product specification Microwave Transistors General TYPE DESIGNATION CODE F o u r t h l e t t e r s u f f i x l e t t e r Code structure The fourth letter indicates the supply voltage: The standard structures of type designation code for
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xxx00000xxxx0000x000xot439afo-91b+2ot443afo-57c
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smd-transistor DATA BOOK
Abstract: smd TRANSISTOR code marking sot423 TRANSISTOR SMD MARKING CODE NM emulsion paint thermal compound wps II TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE QA transistor SMD MARKING CODE HF PHILIPS WIDEBAND HYBRID IC MODULES FO-83A
Contextual Info: DISCRETE SEMICONDUCTORS General Supersedes data of 1998 Jul 30 2000 Mar 02 Philips Semiconductors General QUALITY By means of failure-mode-and-effect analysis the critical parameters of a process are identified. Procedures are then laid down to ensure the highest level of performance
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mc34032n22191n4148mbc775+10smd-transistor data booksmd transistor code marking sot423transistor smd marking code nmemulsion paintthermal compound wps iitransistor smd marking code kftransistor smd marking code qatransistor smd marking code hfphilips wideband hybrid ic modulesfo-83a
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Y parameters of transistors
Abstract: power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B transistor marking pl y1 marking code transistor similar 2N2219 transistor
Contextual Info: Philips Semiconductors RF & Microwave Power Transistors General MARKING CODES FOR RF POWER TRANSISTORS MARKING CODES FOR MICROWAVE TRANSISTORS For the purposes of matched pair applications, RF power MOS transistors are marked with a code that indicates their gate-source voltage range see Table 8 .
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mc34032n22191n4148mbc775+10y parameters of transistorspower transistor transistors equivalentstransistor equivalent tablemicrowave power transistor impedance measurementtransistor 2n2219 data sheet1721e50rmarking 41btransistor marking ply1 marking code transistorsimilar 2n2219 transistor
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sot446
Abstract: LWE2010S SC15 SOT446A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LWE2010S NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor
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lwe2010ssca53127147/00/02/pp12sot446+2sc15sot446a
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copper permittivity
Abstract: SOT446A erie feedthrough capacitors SC15
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LWE201 OS FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR selective amplifier. • Interdigitated structure provides
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lwe201ot446a110macopper permittivity+3sot446aerie feedthrough capacitorssc15
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