LL4153 Search Results

Contextual Info: LL4153 HIGH SPEED SWITCHING DIODE MiniMELF SOD-80C Cathode Mark FEATURES : φ 0.063 (1.64) • High switching speed: max. 4 ns • Continuous reverse voltage:max. 50 V • Repetitive peak reverse voltage:max. 75 V • Pb / RoHS Free 0.055 (1.40) 0.019(0.48)

1N4153

Abstract: 1N4153M LL4153
Contextual Info: SynSEMi 5YM5EMI 5EMIC0HDUCT0R_ 1N4153 1N4153M LL4153 - DO-35 Axial-leaded Package - DO-34 Axial-leaded Package - LL-34 Surface Mount Package Device Electrical Characteristics S ym bol t a = 25°c unless otherwise noted.) P aram eter L im its T est C o n d itio n

LL4153

Contextual Info: LL4153 SILICON EPITAXIAL PLANAR DIODE LL-34 Cathode band Absolute Maximum Ratings* Ta = 25oC Characteristic Symbol Maximum Repetitive Reverse Voltage Value Unit VRRM 75 V IFSM 1.0 4.0 A IF(AV) 200 mA Power Dissipation Ptot 500 mW Thermal Resistance, Junction to Ambient

LL4153

Contextual Info: LL4153 SILICON EPITAXIAL PLANAR DIODE LL-34 Absolute Maximum Ratings* Ta = 25oC Characteristic Symbol Maximum Repetitive Reverse Voltage Value Unit VRRM 75 V IFSM 1.0 4.0 A IF(AV) 200 mA Power Dissipation Ptot 500 mW Thermal Resistance, Junction to Ambient

LL34

Abstract: 1N4153UR-1 CDLL4153 DO-213AA JANTX, JX, JAN IN4153UR-1
Contextual Info: •1N4153UR-1 AVAILABLE IN JAN, JANTX, AND 1N4153UR-1 C D LL4153 JANTXV PER MlL-PRF-19500/337 'SW ITCHING DIODE 'H E R M ETIC A LLY SEALED ' METALLURGICALLY BONDED ' DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Ju n ctio n T e m p e ra tu re : -6 5°C to + 17 5°C

LL4153

Contextual Info: LL4153 SILICON EPITAXIAL PLANAR SWITCHING DIODE LL-34 Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Maximum Repetitive Reverse Voltage VRRM 75 V Average Rectified Forward Current IF(AV) 200 mA IFSM 1 4 A Power Dissipation Ptot 500 mW Thermal Resistance, Junction to Ambient

LL4153

Contextual Info: LL4153 SILICON EPITAXIAL PLANAR DIODE LL-34 Absolute Maximum Ratings* Ta = 25oC Characteristic Symbol Maximum Repetitive Reverse Voltage Unit Value VRRM 75 V IFSM 1.0 4.0 A IF(AV) 200 mA Power Dissipation Ptot 500 mW Thermal Resistance, Junction to Ambient

ll4153

Contextual Info: LL4153 SILICON EPITAXIAL PLANAR DIODE LL-34 Absolute Maximum Ratings* Ta = 25oC Characteristic Symbol Maximum Repetitive Reverse Voltage Value Unit VRRM 75 V IFSM 1.0 4.0 A IF(AV) 200 mA Power Dissipation Ptot 500 mW Thermal Resistance, Junction to Ambient

Contextual Info: LL4153 HIGH SPEED SWITCHING DIODE MiniMELF SOD-80C Cathode Mark FEATURES : φ 0.063 (1.64) • High switching speed: max. 4 ns • Continuous reverse voltage:max. 50 V • Repetitive peak reverse voltage:max. 75 V 0.055 (1.40) 0.019(0.48) 0.011(0.28) 0.142(3.6)

LL4153

Contextual Info: LL4153 HIGH SPEED SWITCHING DIODE MiniMELF SOD-80C Cathode Mark FEATURES : φ 0.063 (1.64) • High switching speed: max. 4 ns • Continuous reverse voltage:max. 50 V • Repetitive peak reverse voltage:max. 75 V • Pb / RoHS Free 0.055 (1.40) 0.019(0.48)

SMD 437 diode

Abstract: BKC Semiconductors DSAIH0002562 0000b32
Contextual Info: MINI-MELF-SMD LL4153 Applications II] Silicon Diode Switching Used in general purpose applications, where a low current controlled forward characteristic and fast switching speed are important. BKC can produce generic equivalents to JAN/ TXJ TXV and S level per

Contextual Info: Silicon Switching Diode i 1N4153 • fe0-35 Glass Package Applications Used in general purpose applications,where a low current controlled forward characteristic and fast switching speed are important. Features • • • • • • DO-35 Glass Package nominal dimensions

Contextual Info: 4684955 a? I T T SEMICONDUCTORS 87D 02327 »e 1m^a^ss 0DDS3a? t J~ D r . o9 SILICON DIODES General Purpose and Switching Diodes in MiniMELF Package Type Peak Inv. Voltage PIV M ax. Aver. Rectified Current lo Pow er Junction Dissipation Tem peraat 25 °C ture T,

LL914

Abstract: LL4149 LL4151 LL4152 LL4153 LL4154 LL4447 LL4449 LL4454
Contextual Info: LL914.LL4454 SILICON EPITAXIAL PLANAR DIODES for General Purpose and Switching. LL-34 Cathode band Peak reverse Type voltage Max. aver. rectified current Max. power dissip. o Max. Max. junction forward temper- voltage at 25 C ature Ptot mW o drop Max. current

LL4149

Abstract: LL4150 LL4152 LL4153 LL4447 LL4449 LL4450 LL4451 LL4453 LL4454
Contextual Info: ITT S E M I C O N D / INTERMETALL b lE » • 4bfl2711 0003172 2^3 m i S l Silicon Diodes Silicon Diodes for general purpose and switching Cathode Mark h - 3.5*01-» / - These diodes are identical electrically to the corresponding JEDEC 1N . . . types.

diode smd ED 84

Abstract: DSAIH00025343 SMD 437 diode
Contextual Info: Silicon Switching Diode 1N4153 DO-35 Glass Package Applications Used in general purpose applications,where a low current controlled forward characteristic and fast switching speed are important. Features DO-35 Glass Package nominal dimensions Six sigma quality

LL4149

Abstract: LL4151 LL4152 LL4153 LL4154 LL4447 LL4449 LL4454 LL914
Contextual Info: LL914.LL4454 SILICON EPITAXIAL PLANAR DIODES for General Purpose and Switching. Peak reverse Type voltage Max. aver. rectified current Max. power dissip. o LL-34 Max. Max. junction forward temper- voltage at 25 C ature Ptot mW o drop Max. current at VRMV

TCA700Y equivalent

Abstract: SAJ300R SAF1092 SAK215 n525 by133 tca700y itt zener diode zpd ITT INTERMETALL BC327-25
Contextual Info: Pages Contents 2 and 3 List of Types 4 to 7 DIGIT2000 Digital TV System 8 to 21 ICs for TV and Radio Receivers 22 ICs for Telephone Applications 23 ICs for Electronic Clocks 24 and 25 ICs for Automobile Applications 26 ICs for other Applications 27 Voltage Stabilizers

ph 4148

Abstract: f494 ph+4148+zener+diode PXTA14 BC546 SMD SMD BC547 BC327/BC517 BC327-40 SMD BST74 BFG 71
Contextual Info: Philips Semiconductors Surface Mounted Semiconductors Conversion List CONVERSION LIST FROM LEADED TO SMD TYPE LEADED SMD LEADED SMD B A 2 43 BA T18 BA W 62 BAW 56 B A 3 14 B A S 17 BA W 62 BAW 56W B A 4 80 BA T17 B A X 12 BAS29 BA481 BA T17 B A X 12 BA S31

diodes ir

Abstract: LL4149 LL4151 LL4152 LL4153 LL4154 LL4447 LL4449 LL4454 LL914
Contextual Info: LL914.LL4454 SILICON EPITAXIAL PLANAR DIODES for General Purpose and Switching. Peak reverse Type voltage Max. aver. rectified current Max. power dissip. o LL-34 Max. Max. junction forward temper- voltage at 25 C ature Ptot mW o drop Max. current at VRMV

BAQ33

Abstract: BAQ34 BAQ35 BAV100 BAV101 BAV102 BAV103 LL4148 LL4150 LL4151
Contextual Info: Surface Mount Fast / Ultra Fast Bridge Rectifiers Part No. CrossReference RMB2S RMB4S RMB6S - EDF1AS EDF1BS EDF1CS EDF1DS - Max. Avg. Rectified Current Peak Inverse Voltage Peak Fwd. Surge Current @ 8.3 ms Superimposed Max. Forward Voltage @ 25oC @ Rated Io

A2 diode

Abstract: 1N414S
Contextual Info: I T T CORP/ I T T CMPNTS 31E D • 4bê2bê4 00Q13QÔ 1 ■ SILICON DIODES - - - — - - - - : General Purpose and Switching Diodes in DO-35 Package Type Peak Inv. Voltage PIV Max. Aver. Power Junction Rectified Dissipation TemperaCurrent lo at 25 'G

1n4148 ITT

Abstract: 1N914 ITT 1N914/1N4148 1n4448 itt 1N4148 1N4149 1N4150 1N4151 1N4152 1N4153
Contextual Info: I T T CORP/ I T T CMPNTS 31E D • 4bê2bê4 00Q13QÔ 1 ■ SILICON DIODES - - - - - — - - : G en era l P u r p o s e a n d S w it c h in g D io d e s in D O -3 5 P a ck a ge Type Peak Inv. Voltage PIV Max. Aver. Rectified Current lo Power

TELEVISION EHT TRANSFORMERS

Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31
Contextual Info: Philips Semiconductors Diodes Contents page SELECTION GUIDE Small-signal diodes 5 Tuner diodes 7 FM detection diodes 8 Low leakage diodes 8 Schottky barrier switching diodes 9 Stabistors Voltage regulators 9 10 Voltage reference diodes 11 Transient suppressor diodes