JUL06 Search Results

Contextual Info: 7 8 6 5 3 4 1 2 REVISIONS REV. EAR .020 0.51 F 13741 DESCRIPTION DATE APPROVED NOTE UPDAATES JUL06/10 K.L .075 1.90 F F .271 6.88 .181 4.59 1.099 27.90 E E GASKET SHELL .737 18.73 EPOXY SEAL D D MDB-E09PA-765 IS SHOWN .120 3.05 2 HOLES .118 3.00 NOTES: .494

Contextual Info: 7 8 6 5 3 4 1 2 REV DESCRIPT DATE - APPRVD B - NOTE UPDATES EAR 13741 - JUL06/10 - K.L C - COVER UPDATE (EAR 13954) - SEP22/11 - K.L .730 18.55 .271 6.87 F .020 0.51 . F .075 1.90 1.105 28.07 .181 4.59 E E HOUSING SHELL .645 16.38 GASKET EPOXY SEAL MDB-E09SE-765 IS SHOWN

Contextual Info: 7 8 6 5 3 4 1 2 REV DESCRIPT DATE - APPRVD E - NOTE UPDATES EAR 13741 - JUL06/10 - K.L .730 18.55 .271 6.87 F .020 0.51 . F .075 1.90 1.105 28.07 .181 4.59 E E HOUSING SHELL GASKET EPOXY SEAL .645 16.38 MDB-E09SA-765 IS SHOWN D .120 3.05 2 HOLES .313 7.95

Contextual Info: 7 8 6 5 3 4 1 2 REV - DESCRIPT - DATE - APPRVD . C - EAR 13741 - JUL06/10 - KL .075 1.90 .020 0.51 . . F F .181 4.59 .271 6.88 1.106 28.08 E 1.516 38.50 .494 12.55 E .118 3.00 .120 3.05 2 THRU HOLES .313 7.95 .283 7.20 D D .222 5.65 1.852 47.04 .494 12.56

Contextual Info: 3 6 THIS DR A WI N G COPYRI GHT IS UNPUBL IS HED. 19 RELEASED BY AMP INCORPORATED. ALL F OR P U B L I C A T I O N RIGHTS LOC DIST REVISIONS RESERVED. LTR DESCRIPTION RELEASE THRU -23 DA T E DWN A PV D 2 1 JUL06 TS JH [ 1 1 . 8 1 + . 98] D CABLE 49 5, C M , B R A I O

ptfe washer

Contextual Info: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2006 RELEASED FOR PUBLICATION 2 JULY ,2006- LOC ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. E R E V IS IO N S DIST B LTR B NOTES: /K DESCRIPTION DATE ECR —06 —01 7 5 5 2 DWN 2 1 JUL06 APVD JMS FWK PACK IN ACCORDANCE WITH AMP SPEC 107-3275

Contextual Info: 7 8 6 5 3 4 1 2 REV - DESCRIPT - DATE - APPRVD D - EAR 13741- JUL06/10 - K.L F .243 6.17 F .643 16.33 .734 18.65 4-40 UNC 2 HOLES E E .020 0.51 1.213 30.81 .112 2.84 .494 12.55 D D .056 1.42 .126 3.20 .374 9.50 .98 24.99 PLASTIC MOULD SHELL C .110 2.80 .103

Contextual Info: 7 8 6 5 3 4 1 2 REVISIONS .728 18.50 REV. EAR B .020 0.51 13741 DESCRIPTION DATE APPROVED NOTE UPDATES JUL06/10 K.L .075 1.90 F F .271 6.88 .181 4.59 1.099 27.90 E E GASKET SHELL .737 18.73 EPOXY SEAL D D .120 3.05 2 HOLES MDB-E09PE-765 IS SHOWN .313 7.95

Contextual Info: JUL06 1/3 MITSUBISHI (OPTICAL DEVICES) FU-450SDF-FW1M2 1.31 m DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL DESCRIPTION Module type FU-450SDF-FW1M2 is a 1.3μm coaxial Uncooled DFB-LD module with single-mode optical fiber. This module is suitable for a light source of test

coaxial laser diode 1550 nm

Contextual Info: JUL06 1/3 MITSUBISHI (OPTICAL DEVICES) FU-650SDF-FW1M2 1.55 m DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL DESCRIPTION Module type FU-650SDF-FW1M2 is a 1.5μm coaxial Uncooled DFB-LD module with single-mode optical fiber. This module is suitable for a light source of test

P-MDB-227-093-205BP

Contextual Info: 7 8 6 5 3 4 1 2 REV DESCRIPT DATE - APPRVD B - NOTE UPDATES EAR 13741 - JUL06/10 - K.L . .730 18.55 .271 6.87 F .020 0.51 . F .075 1.90 1.105 28.07 .181 4.59 E E HOUSING SHELL .645 16.38 GASKET EPOXY SEAL MDB-E09SE-765 IS SHOWN D D .120 3.05 2 HOLES .313

FT6163

Contextual Info: FT6163/FT6163L  Ultra High Speed 8K x 9 Static Cmos Rams FEATURES Data Retention with 2.0V Supply, 10 µA Typical Current 7163L Military) Common I/O Fully TTL Compatible Inputs and Outputs Standard Pinout (JEDEC Approved)

BAT62-08S

Abstract: VPS05604
Contextual Info: BAT62-08S Silicon Schottky Diode Array Preliminary data 4
Low barrier diode for detectors up to GHz 5 6 frequencies 2 Tape loading orientation Top View 654 Marking on SOT-363 package for example W1s corresponds to pin 1 of device C1 C2 C3 6 5 4 3 1 VPS05604

BAS16S

Abstract: VPS05604 4C3 diode
Contextual Info: BAS16S Silicon Switching Diode Array 4
For high-speed switching applications 5 6
Internal galvanic isolated diodes in one package Tape loading orientation Top View 654 Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device C1 C2

BAT15-05W

Abstract: VSO05561 noise diode
Contextual Info: BAT15-05W Silicon Schottky Diode
DBS mixer applications up to 12 GHz 3
Low noise figure
Low barrier type 2 1 VSO05561 BAT 15-05W C1/C2 3 1 2 A1 A2 EHA07179 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT15-05W

6A1 diode

Abstract: BAS70-06S VPS05604
Contextual Info: BAS70-06S Silicon Schottky Diode Array 4
General-purpose diode for high-speed switching 5 6
Circuit protection
Voltage clamping
High-level detecting and mixing 2 A1/A2 C2 C1 6 5 4 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAS70-06S

Contextual Info: P4C163/P4C163L ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAMS FEATURES Data Retention with 2.0V Supply, 10 µA Typical Current P4C163L Military Common I/O Fully TTL Compatible Inputs and Outputs Standard Pinout (JEDEC Approved) – 28-Pin 300 mil DIP, SOJ – 28-Pin 350 x 550 mil LCC

Contextual Info: FT6163/FT6163L ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAM FEATURES Data Retention with 2.0V Supply, 10 µA Typical Current FT6163L Military Common I/O Fully TTL Compatible Inputs and Outputs Standard Pinout (JEDEC Approved) – 28-Pin 300 mil DIP, SOJ – 28-Pin 350 x 550 mil LCC

EPM1270T144

Abstract: ALTERA EPM1270F256 epm1270f256 256 pin diagram EPM1270 F256 Y1057 TQFP 256
Contextual Info: Dedicated Pin Information for the MAX II EPM1270 / EPM1270G Devices Version 1.4 144-Pin TQFP 18 20 89 91 60 61 34 33 35 36 17, 54, 92, 128 10, 26, 47, 65, 83, 99, 115, 135 VCCINT 1 VCCIO1 (2) VCCIO2 (2) VCCIO3 (2) VCCIO4 (2) No Connect (N.C.) Total User I/O Pins

Contextual Info: PYX28C64 8K x 8 EEPROM FEATURES Access Times of 200, 250, 300 and 350 ns Software Data Protection Single 5V±10% Power Supply Fully TTL Compatible Inputs and Outputs Simple Byte and Page Write Endurance: 10,000 or 100,000 Cycles Low Power CMOS: - 60 mA Active Current

BAR65-02W

Abstract: SCD80
Contextual Info: BAR65-02W Silicon RF Switching Diode
Low loss, low capacitance PIN-diode 2
Band switch for TV-tuners
Series diode for mobile communication transmit-receiver switch 1 Type BAR65-02W Marking N VES05991 Pin Configuration 1=C 2=A Package SCD80 Maximum Ratings

BDP 948 E6433

Contextual Info: BDP948, BDP950 PNP Silicon AF Power Transistors
For AF driver and output stages 4
High collector current
High current gain
Low collector-emitter saturation voltage 3
Complementary types: BDP947, BDP949 NPN 2 1 Pin Configuration VPS05163 Type Marking

1N4001G

Abstract: 1N4007G 4002G 4005G 4006G
Contextual Info: 1N4001G THRU 1N4007G Glass Passivated Standard Rectifier YENYO Voltage Range 50 to 1000 V Current 1.0 Ampere Features ¬ Low forward voltage drop ¬ High current capability ¬ Low reverse leakage current ¬ High surge current capability Mechanical Data ¬ Case: Molded plastic DO-41

d4210

Abstract: PU86 amphenol 03554
Contextual Info: 1 2 3 4 5 6 REVISIONS REV. ECN A DESCRIPTION DATE PROPOSAL MAR08/09 APPROVED A A LIGHT PIPE CONFIGURATIONS PART NUMBER LAST DIGIT INDICATING PACKAGING TYPE, NOT PRINTED ON THE PART U86-DX42C-10XX1 U86-DX42C-30XX1 U86-DX42C-20XX1 (4 LIGHT PIPES PER 2X1) (2 INNER LIGHT PIPES PER 2X1) (2 OUTER LIGHT PIPES PER 2X1)