JDV2S05S Search Results

JDV2S05S

Contextual Info: 20010205 JDV2S05S SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) ,XTI(-) FREQUENCY RANGE: f = 0.1 GHz～3 GHz REVERSE VOLTAGE RANGE: VR = 1V ～ 4 V

JDV2S05S

Contextual Info: JDV2S05S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S05S VCO for UHF band • Unit: mm High capacitance ratio: C1V/C4V = 1.9 typ. · Low series resistance: rs = 0.3 Ω (typ.) · This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)

JDV2S05S

Contextual Info: JDV2S05S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S05S VCO for UHF band Unit: mm • High capacitance ratio: C1V/C4V = 1.9 typ. • Low series resistance: rs = 0.3 Ω (typ.) • This device is suitable for use in a small-size tuner. Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: JDV2S05S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S05S VCO for UHF band Unit in mm • High capacitance ratio: C1V/C4V = 1.9 typ. • Low series resistance: rs = 0.3 Ω (typ.) • This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)

JDV2S05S

Contextual Info: JDV2S05S 東芝ダイオード シリコンエピタキシャルプレーナ形 JDV2S05S ○ UHF 帯無線 VCO 用 • 容量比が大きい。 単位: mm : C1V/C4V = 1.9 標準 • 直列抵抗が小さい。 : rs = 0.3 Ω (標準) • 2 端子超小型外囲器なので､VCO の小型化に適しています。

Contextual Info: JDV2S05S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S05S VCO for UHF band • Unit: mm High capacitance ratio: C1V/C4V = 1.9 typ. • Low series resistance: rs = 0.3 Ω (typ.) • This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)

Contextual Info: JDV2S05S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S05S VCO for UHF band • Unit: mm High capacitance ratio: C1V/C4V = 1.9 typ. · Low series resistance: rs = 0.3 Ω (typ.) · This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)

JDV2S05S

Contextual Info: JDV2S05S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S05S VCO for UHF band Unit in mm • High capacitance ratio: C1V/C4V = 1.9 typ. • Low series resistance: rs = 0.3 Ω (typ.) • This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)

JDV2S05S

Contextual Info: JDV2S05S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S05S VCO for UHF band Unit: mm • High capacitance ratio: C1V/C4V = 1.9 typ. • Low series resistance: rs = 0.3 Ω (typ.) • This device is suitable for use in a small-size tuner. Absolute Maximum Ratings (Ta = 25°C)

SCJ0004N

Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード

Variable Capacitance Diodes

Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
Contextual Info: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A

RFM70U12D

Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック

sec 2sc5088

Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
Contextual Info: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and

MT3S111P

Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293
Contextual Info: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287

TOSHIBA RF Power Module S-AV24

Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
Contextual Info: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

CMG03

Abstract: 1SS391 2fu smd transistor DF2S6.8S CMG07 TOSHIBA DIODE CATALOG DSR520CT toshiba SEMICONDUCTOR GENERAL CATALOG CMF05 CRS01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2009-8 SCE0004I Rectifiers General-Purpose Rectifiers Average Forward Current A

3SK73

Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
Contextual Info: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

2fu smd transistor

Abstract: 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B
Contextual Info: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 256 Zener Diodes z 257 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A

DF2S3.6SC

Abstract: CRH02 CRG09 CMG07 1SS416CT CRG07 CMS19 CMZ24 HN2D01JE JDV2S10FS
Contextual Info: 東芝半導体製品総覧表 2010 年 1 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード

BB 505 Varicap Diode

Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
Contextual Info: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent

FET K161

Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
Contextual Info: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or

FET K161

Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
Contextual Info: 高周波用半導体デバイス トランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

2sc5088 horizontal transistors

Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
Contextual Info: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or

RFM70U12D

Abstract: 2SC3136 RFM70 TGI8596-50 MT4S300T TA4029 TA4032FT TA4029TU TA4029CTC 2SK403
Contextual Info: 東芝半導体製品総覧表 2010 年 1 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック