IXSH15N120A Search Results

IXSH15N120AU1

Abstract: IC-90
Contextual Info: IXSH15N120AU1 PRELIMINARY DATA SHEET IGBT with Diode IC25 = 30 A VCES = 1200 V VCE sat = 4.0 V "S" Series - Improved SCSOA Capability C G E Symbol Test Conditions Maximum Ratings V CES T J = 25°C to 150°C 1200 V V CGR T J = 25°C to 150°C; RGE = 1 MΩ

Contextual Info: Preliminary Data S heet IXSH15N120A IGBT V CES V CE sat "S" Series - Improved SCSOA Capability Symbol Test Conditions v CES v CGR T j = 25°C to 150°C 1200 V T j = 25°C to 150°C; RGE= 1 M£2 1200 V Maximum Ratings Continuous ±20 V T ransient ±30 V ^C25

IXSH15N120A

Contextual Info: Preliminary Data Sheet IC25 = 30 A VCES = 1200 V VCE sat = 4.0 V IXSH15N120A IGBT "S" Series - Improved SCSOA Capability Symbol Test Conditions Maximum Ratings V CES V CGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ V GES V GEM Continuous Transient

Contextual Info: □ I X Y IXSH15N120AU1 S P R E L IM IN A R Y D A T A S H E E T IGBT with Diode ^C 2 5 "S" Series - Improved SCSOA Capability Symbol T est C onditions V CES T j = 2 5 °C to 150°C V CGR T j = 2 5 °C to 150°C ; f^E= 1 M ß V GES V CES V CE sat M axim um Ratings

XSH15

Contextual Info: Prelim inary D a ta s h e e t IXSH15N120A IGBT VCES VCE sat "S" Series - Improved SCSOACapability Sym bol T e s t C o n d itio n s M a x im u m R a tin g s 30 A 1200 V 4.0 V T O -2 4 7 A D 1200 J j = 2 5 °C to 150°C Tj = 2 5 °C to 150°C ; F^E= 1 MO 1200

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

10A600V

Abstract: 1XGH20N60AU1 IGBT cross reference HGTP20N6QB3 IXSH20N60AU1 20a600v 12A600V CT60AM-20 5N60RUFD 5A1200V
Contextual Info: SAMSUNG IGBT TOSHIBA MOTOLORA HARRIS SIEM ENS IXYS HUfU3NÖ0B3S hü'mSNtäoöä U ltiJ 102 H U IU /N Ö Ü B 3 HGIP12NB0B3 IXGP10N60A U 115J101 IXGH10N60A HGTP20N6QB3 GT25JT01 HGlu2UfJt>063 IXGH20N6QA IXGH24N6QA HU Î J4UNöUt33 IXGH40N60A IXGH50N6ÛA, HU I P^NbUBaU

SGH80N60RUFD

Abstract: bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120
Contextual Info: Infineon Technologies Cross Reference List Fast IGBT & DuoPack Company Product Name Fairchild * Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*)

Contextual Info: DIXYS IGBT with Diode IXSH 15N120AU1 IC25 V Short Circuit SOA Capability Symbol Test Conditions VCES v CGR T j = 25°C to 150°C 1200 V T j = 25°C to 150°C; RGE= 1 MO 1200 V v v GEM Continuous Transient U25 U90 ' cm Tc =25°C Tc = 90°C Tc = 25°C, 1 ms

50n50c

Abstract: 50N60 IXGH20N60AU1 10N60A IXGH20N60U1 G 50N60 G20N60 sot-227 footprint A48A 24N60
Contextual Info: Preliminary data HiPerFASTTM IGBT VCES IXGH 50N50B IXGH 50N60B IC25 VCE sat 500 V 75 A 600 V 75 A tfi 2.3 V 100 ns 2.5 V 120 ns TO-247 AD C (TAB) Symbol Test Conditions Maximum Ratings 50N50 50N60 VCES TJ = 25°C to 150°C 500 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ