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    10N100P Search Results

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    10N100P Price and Stock

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    IXYS Corporation IXFH10N100P

    Mosfet, N-Ch, 1Kv, 10A, To-247Ad; |Ixys Semiconductor IXFH10N100P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IXFH10N100P Bulk 1
    • 1 $10.80
    • 10 $9.33
    • 100 $5.87
    • 1000 $5.31
    • 10000 $5.31
    Buy Now
    TME IXFH10N100P 267 1
    • 1 $9.33
    • 10 $7.03
    • 100 $5.41
    • 1000 $5.20
    • 10000 $5.20
    Buy Now

    Littelfuse Inc IXFH10N100P

    DiscMosfetN-CH HiPerFET-Polar TO-247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS IXFH10N100P Bulk 8 Weeks 30
    • 1 -
    • 10 -
    • 100 $7.73
    • 1000 $7.73
    • 10000 $7.73
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    10N100P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: □ IXYS Low VCE sal IGBT with Diode High speed IGBT with Diode IXGH 10 N100U1 IXGH 10 N100AU1 V CES ^C25 V CE(sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions vw CES T, = 25°C to 150°C 1000 V V CGR Tj = 25°C to 150°C; RaE = 1 M£2


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    n100u1n100au1o-24710n100u1+210n100au14bflb22b PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


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    ms-01310-pin5m-1994mo-229+107n60b equivalent18n50 equivalentixgh 1499mosfet smd 4407ixdd 614c 547 b w57 bjt transistorr1275ns20lr1271ns12cixys cs 20-22 mof1ixtp 220n04t2 PDF

    10N100U1

    Abstract: RG150
    Contextual Info: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 10 N100U1 IXGH 10 N100AU1 VCES I C25 VCE(sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1000 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ


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    n100u1n100au110n100u110n100au1+1rg150 PDF

    50n50c

    Abstract: 50N60 IXGH20N60AU1 10N60A IXGH20N60U1 G 50N60 G20N60 sot-227 footprint A48A 24N60
    Contextual Info: Preliminary data HiPerFASTTM IGBT VCES IXGH 50N50B IXGH 50N60B IC25 VCE sat 500 V 75 A 600 V 75 A tfi 2.3 V 100 ns 2.5 V 120 ns TO-247 AD C (TAB) Symbol Test Conditions Maximum Ratings 50N50 50N60 VCES TJ = 25°C to 150°C 500 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


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    50n50b50n60bo-24750n50+1250n60ixgh24n50bu1ixgh24n60bu150n50cixgh20n60au110n60aixgh20n60u1g 50n60g20n60sot-227 footprinta48a24n60 PDF