IXFK20N Search Results

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH20N80Q IXFK20N80Q IXFT20N80Q Q-Class VDSS = 800 V = 20 A ID25 RDS on = 0.42 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS

Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFK20N120P IXFX20N120P VDSS ID25 = 1200V = 20A Ω ≤ 570mΩ ≤ 300ns RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr TO-264 (IXFK) Symbol Test Conditions Maximum Ratings

PLUS247

Contextual Info: HiPerFETTM Power MOSFETs VDSS = 800 V ID25 = 20 A RDS on = 0.42 Ω IXFK20N80Q IXFX20N80Q Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFK20N120P IXFX20N120P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr TO-264 (IXFK) Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 1200 1200 V V

IXFK20N120P

Abstract: IXFX20N120P IXFX20N120 IXFK20N120 PLUS247 DS99854B
Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFK20N120P IXFX20N120P VDSS ID25 = 1200V = 20A Ω ≤ 570mΩ ≤ 300ns RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

IXFH20N80Q

Abstract: IXFK20N80Q IXFT20N80Q IXFT20N80
Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH20N80Q VDSS = 800 V IXFK20N80Q ID25 = 20 A IXFT20N80Q RDS on = 0.42 W Q-Class trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS

IXFH20N80Q

Abstract: IXFK20N80Q IXFT20N80Q
Contextual Info: HiPerFETTM Power MOSFETs VDSS = 800 V ID25 = 20 A RDS on = 0.42 Ω IXFH20N80Q IXFK20N80Q IXFT20N80Q Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

Contextual Info: □ IXYS Advanced Technical Information HiPerFET Power MOSFETs Q-Class IXFH20N80Q IXFK20N80Q IXFT20N80Q V DSS = ^D25 ” RDS on 800 V 20 A — 0.42 n t < 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Q g, High dv/dt rr {&• V . os Maximum Ratings

Contextual Info: HiPerFETTM Power MOSFETs IXFH20N80Q IXFK20N80Q IXFT20N80Q Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800

20N80Q

Contextual Info: DIXYS Advanced Technical Information HiPerFET Power MOSFETs IXFH 20N80Q IXFK20N 80Q IXFT 20N80Q Maximum Ratings V VDGR Tj =25°C to150°C T,J = 25°C to 150°C;’ R_. = 1 M ii OS 800 800 V V Vos v GSM Continuous Transient ±20 ±30 V V 20 80 20 A A A 45

sd 20n60

Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
Contextual Info: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06

ne 22 mosfet

Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50
Contextual Info: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)