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    IXFT20N80Q Search Results

    IXFT20N80Q Datasheets (1)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXFT20N80Q
    IXYS 800V HiPerFET power MOSFET Q-class Original PDF 72.49KB 2

    IXFT20N80Q Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH20N80Q IXFK20N80Q IXFT20N80Q Q-Class VDSS = 800 V = 20 A ID25 RDS on = 0.42 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS


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    o-247o-268o-264ixfh20n80q+2ixfk20n80qixft20n80q PDF

    Contextual Info: HiPerFETTM Power MOSFETs VDSS = 800 V ID25 = 20 A RDS on = 0.42 Ω IXFH20N80Q IXFT20N80Q Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


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    o-247o-268ixfh20n80qixft20n80q+2728b1123b1 PDF

    IXFH20N80Q

    Abstract: IXFK20N80Q IXFT20N80Q IXFT20N80
    Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH20N80Q VDSS = 800 V IXFK20N80Q ID25 = 20 A IXFT20N80Q RDS on = 0.42 W Q-Class trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS


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    ixfh20n80qixfk20n80qixft20n80qo-247+1ixft20n80 PDF

    IXFH20N80Q

    Abstract: IXFK20N80Q IXFT20N80Q
    Contextual Info: HiPerFETTM Power MOSFETs VDSS = 800 V ID25 = 20 A RDS on = 0.42 Ω IXFH20N80Q IXFK20N80Q IXFT20N80Q Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original
    ixfh20n80qixfk20n80qixft20n80qo-247+1728b1 PDF

    Contextual Info: □ IXYS Advanced Technical Information HiPerFET Power MOSFETs Q-Class IXFH20N80Q IXFK20N80Q IXFT20N80Q V DSS = ^D25 ” RDS on 800 V 20 A — 0.42 n t < 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Q g, High dv/dt rr {&• V . os Maximum Ratings


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    ixfh20n80qixfk20n80qixft20n80qo-247 PDF

    Contextual Info: HiPerFETTM Power MOSFETs IXFH20N80Q IXFK20N80Q IXFT20N80Q Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800


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    ixfh20n80qixfk20n80qixft20n80qo-247+1728b1 PDF

    ne 22 mosfet

    Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50
    Contextual Info: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)


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    isoplus220tmisoplus247tmvt0268t0264+16ot227bo-263o-220247tmo-247o-204ne 22 mosfetixfh26n60qixft12n100qixfr100n25ixfn26n90fn230ixfn36n60n50pixfn44n50u2ixfn80n50 PDF