IS62LV Search Results

Contextual Info: m IS62LV256L 32K x 8 LOW VOLTAGE CMOS STATIC RAM H ig h -s p e e d a c c e s s tim e : 15, 20, 25 ns • A u to m a tic p o w e r-d o w n w h e n c h ip is d e se le cte d • C M O S low p o w e r o p e ra tio n — 2 5 5 m W m a x. o p e ra tin g — 0.18 m W (m ax.) C M O S s ta n d b y

Contextual Info: ISSI IS 6 2 L V 1 2 8 1 6 L / L L PRELIMINARY INFORMATION OCTOBER 1999 128K x 16 CMOS STATIC RAM FEATURES DESCRIPTION • High-speed access time: 55, 70,100 ns The IS S IS62LV12816L and IS62LV12816LL are high­ speed, 2,097,152-bit static RAMs organized as 131,072

IS62LV12816L

Abstract: sr002 IS62LV12816L-70T uA78
Contextual Info: ISSI ISSI IS62LV12816L IS62LV12816L ® ADVANCE INFORMATION AUGUST 1998 128K x 16 CMOS STATIC RAM 1 FEATURES DESCRIPTION • High-speed access time: 70, 100, and 120 ns • CMOS low power operation – 120 mW typical operating – 6 µW (typical) CMOS standby

Contextual Info: IS62LV256L 32K x 8 LOW VOLTAGE CMOS STATIC RAM FEATURES • High-speed access time: 15, 20, 25 ns • Automatic power-down when chip is deselected • CMOS low power operation — 255 mW max. operating — 0.18 mW (max.) CMOS standby • TTL compatible interface levels

Contextual Info: IS62LV12816L IS62LV12816LL IS62LV12816L IS62LV12816LL 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES DESCRIPTION The 1+51 IS62LV12816L and IS62LV12816LL are high-speed, • High-speed access times: 55, 70, 100 ns • CMOS low power operation

Contextual Info: ISSI IS62LV256L 32K x 8 LOW VOLTAGE CMOS STATIC RAM APRIL 1999 FEATURES DESCRIPTION • High-speed access time: 15, 20, 25 ns T he IS 62LV 256L is a ve ry high-speed, low power, 32,768-w ord by 8 -b it static RAM. It is fabricated using s high-perform ance C M O S technology. This highly reliable pro­

TSOP 1378

Abstract: 45ti 62C1024 IS62LV1024L IS62LV1024LL IS62LV1024LL-70TI
Contextual Info: IS62LV1024L IS62LV1024L/LL IS62LV1024LL ISSI 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM FEATURES • Access times of 35, 45, 50, and 70 ns • Low active power: 60 mW typical • Low standby power: 15 µW (typical) CMOS standby • Low data retention voltage: 2V (min.)

Contextual Info: ISSI IS62LV12816BLL 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM NOVEMBER 2000 FEATURES DESCRIPTION • High-speed access time: 55, 70, 100 ns • CMOS low power operation – 120 mW typical operating – 6 µW (typical) CMOS standby • TTL compatible interface levels

IS62LV256AL-20T

Abstract: IS62LV256AL-20TL IS62LV256AL-45T IS62LV256AL-45TL IS65LV256AL IS62LV256AL IS62LV256AL-20J IS62LV256AL-20JL
Contextual Info: IS65LV256AL IS62LV256AL ISSI 32K x 8 LOW VOLTAGE CMOS STATIC RAM OCTOBER 2006 FEATURES • High-speed access time: 20, 45 ns • Automatic power-down when chip is deselected • CMOS low power operation — 17 µW typical CMOS standby — 50 mW (typical) operating

Contextual Info: ISSI IS62LV1024LL 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM OCTOBER 2000 FEATURES DESCRIPTION • Access times of 45, 55, and 70 ns • Low active power: 60 mW typical • Low standby power: 15 µW (typical) CMOS standby • Low data retention voltage: 2V (min.)

Contextual Info: ISSI ISSI IS62LV2568L IS62LV2568L/LL IS62LV2568LL 256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM FEATURES • Access times of 70 ns, 85 ns, and 100 ns • Low active power: 126 mW max, L, LL • Low standby power: 36 µW (max, L) and 7.2 µW (max, LL) CMOS standby

IS62LV256

Abstract: IS62LV256-45J IS62LV256-45T IS62LV256-45U IS62LV256-70RT IS62LV256-70T IS62LV256-70U
Contextual Info: ISSI IS62LV256 32K x 8 LOW VOLTAGE STATIC RAM DECEMBER 2002 FEATURES DESCRIPTION • Access time: 45, 70 ns • Low active power: 70 mW • Low standby power — 45 µW CMOS standby • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs

IS62LV1288BLL-70HI

Abstract: IS62LV1288BLL-70TI IS62LV1288BLL IS62LV1288BLL-70QI IS62LV1288LL
Contextual Info: ISSI IS62LV1288BLL AUGUST 2002 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM FEATURES DESCRIPTION • Access times of 70 ns • Low active power: 60 mW typical • Low standby power: 6 µW (typical) CMOS standby • Low data retention voltage: 2V (min.)

IS62LV1024-35Q

Abstract: IS62LV1024-35T IS62LV1024-45Q IS62LV1024-45T IS62LV1024-55Q IS62LV1024-55T TSOP 1378
Contextual Info: ISSI ISSI IS62LV1024 IS62LV1024 128K x 8 LOW VOLTAGE AND POWER CMOS STATIC RAM FEATURES • High-speed access time: 35, 45, 55, 70 ns • Low active power: 100 mW typical • Low standby power: 50 µW (typical) CMOS standby • Output Enable (OE) and two Chip Enable

Contextual Info: IS62LV5128L IS62LV5128LL ISSI 512K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM MAY 2000 FEATURES DESCRIPTION • Access times of 70, 85 and 100 ns • CMOS low power operation: — 120 mW typical operating — 6 µW (typical) standby • Low data retention voltage: 2V (min.)

Contextual Info: ISSI IS62LV5128LL 512K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM SEPTEMBER 2000 FEATURES DESCRIPTION • Access times of 70, 85 ns • CMOS low power operation: — 135 mW typical operating — 16.5 µW (typical) standby • Low data retention voltage: 2V (min.)

Contextual Info: IS65LV256AL IS62LV256AL ISSI 32K x 8 LOW VOLTAGE CMOS STATIC RAM PRELIMINARY INFORMATION SEPTEMBER 2005 FEATURES • High-speed access time: 20, 45 ns • Automatic power-down when chip is deselected • CMOS low power operation — 17 µW typical CMOS standby

IS62LV256-70T

Contextual Info: ISSI IS62LV256 32K x 8 LOW VOLTAGE STATIC RAM APRIL 2002 FEATURES DESCRIPTION • Access time: 45, 70 ns • Low active power: 70 mW • Low standby power — 45 µW CMOS standby • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs

Contextual Info: IS62LV2568L IS62LV2568LL issr 256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM FEATURES • Access times of 70 ns, 85 ns, and 100 ns • Low active power: 126 mW max, L, LL • Low standby power: 36 fiW (max, L) and 7.2 fiW (max, LL) CMOS standby • Low data retention voltage: 2V (min.)

Contextual Info: IS62LV256L 32K x 8 LOW VOLTAGE CMOS STATIC RAM APRIL 1999 FEATURES DESCRIPTION • High-speed access time: 15, 20, 25 ns • Automatic power-down when chip is deselected The IS S I IS62LV256L is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ISSI' s

Contextual Info: ISSI ISSI IS62LV6416LL IS62LV6416LL 64K x 16 HIGH-SPEED ULTRA-LOW POWER CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access time: 15, 20, 35, and 45 ns • CMOS low power operation — 40 mW typical operating — 90 µW (typical) standby • TTL compatible interface levels

chn 45L

Contextual Info: IS62LV1024L IS62LV1024LL ISSI 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM PRELIMINARY SEPTEMBER 1998 FEATURES DESCRIPTION • A c c e s s tim e s o f 3 5 , 4 5 , 5 0 , a n d 7 0 ns • L o w a c tiv e p o w e r: 6 0 m W ty p ic a l • L o w s ta n d b y p o w e r: 15 fiW (ty p ic a l) C M O S

PK131

Contextual Info: IS62LV1024L IS62LV1024LL ISSI 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM p r e l im in a r y OCTOBER 1997 FEATURES DESCRIPTION • Access times of 35, 45, 50, and 70 ns The IS S IS62LV1024L and IS62LV1024LL are low power and low Vcc, 131,072-word by 8-bit CMOS static RAMs. They

Contextual Info: ISSI IS62LV12816L/LL ADVANCE INFORMATION MARCH 1999 128K x 16 CMOS STATIC RAM FEATURES DESCRIPTION • High-speed access time: 55, 70,100 ns T U elS S I IS62LV12816Land IS62LV12816LLare high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16