45TI Search Results
45TI Price and Stock
Alliance Memory Inc AS6C1616C-45TINTRIC: SRAM memory; 16MbSRAM; 1Mx16bit/2Mx8bit; 2.7÷3.6V; 45ns |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
AS6C1616C-45TINTR | 1,500 |
|
Get Quote | |||||||
|
AS6C1616C-45TINTR | 1,433 |
|
Buy Now | |||||||
Alliance Memory Inc AS6C1616B-45TINIC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 45ns; TSOP48 |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
AS6C1616B-45TIN | 1 |
|
Get Quote | |||||||
|
AS6C1616B-45TIN | Tray | 30 Weeks | 96 |
|
Buy Now | |||||
|
AS6C1616B-45TIN | 8,064 | 17 Weeks | 96 |
|
Buy Now | |||||
Alliance Memory Inc AS6C1616C-45TINIC: SRAM memory; 16MbSRAM; 1Mx16bit/2Mx8bit; 2.7÷3.6V; 45ns |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
AS6C1616C-45TIN | 1 |
|
Get Quote | |||||||
|
AS6C1616C-45TIN | Tray | 24 Weeks | 96 |
|
Buy Now | |||||
Alliance Memory Inc AS6C1616B-45TINTRIC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 45ns; TSOP48 |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
AS6C1616B-45TINTR | 1,500 |
|
Get Quote | |||||||
|
AS6C1616B-45TINTR | Tape & Reel | 30 Weeks | 1,500 |
|
Buy Now | |||||
|
AS6C1616B-45TINTR | 17 Weeks | 1,500 |
|
Get Quote | ||||||
Alliance Memory Inc AS6C1608B-45TINTRIC: SRAM memory |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
AS6C1608B-45TINTR | 1,500 |
|
Get Quote | |||||||
|
AS6C1608B-45TINTR | Tape & Reel | 30 Weeks | 1,500 |
|
Buy Now | |||||
|
AS6C1608B-45TINTR | 21 Weeks | 1,500 |
|
Get Quote | ||||||
45TI Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
aeg t1580
Abstract: T1580 KA287
|
OCR Scan |
t1580t1580n14/figure16/figure+3 | |
aeg t270n
Abstract: ST 084C aeg t270 T270 T270N
|
OCR Scan |
t270n125ocaeg t270nst 084c+2 | |
|
Contextual Info: FTS512K8L LOW POWER 512K x 8 CMOS STATIC RAM FEATURES Common Data I/O Three-State Outputs Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Automatic Power Down Packages —32-Pin 600 mil Plastic and Ceramic DIP —32-Pin 445 mil SOP —32-Pin TSOP II |
Original |
fts512k8l--32-pinfts512512k8loct-05+3 | |
45TI
Abstract: SIQ124R
|
OCR Scan |
siq124r100khzl045ti | |
|
Contextual Info: P4C1256 HIGH SPEED 32K x 8 STATIC CMOS RAM FEATURES Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Fast tOE Automatic Power Down Packages —28-Pin 300 mil DIP, SOJ, TSOP —28-Pin 300 mil Ceramic DIP —28-Pin 600 mil Ceramic DIP —28-Pin CERPACK |
Original |
p4c1256--28-pin--32-pin144-bit | |
HCB1075
Abstract: HCB1065
|
OCR Scan |
hcb1065hcb1068hcb1070acteristicshcb1065b-121+6 | |
|
Contextual Info: ESM T Preliminary F59D2G81A Operation Temperature Condition -40 C~85 C Flash 2 Gbit (256M x 8) 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase |
Original |
f59d2g81a250us | |
SILM830Contextual Info: SMT Power Inductor SILM8XX Type Features • Low profile, SMD type. ■ ■ ■ ■ Magnetically shielded, suitable for high density mounting. High energy storage and low DCR. Provided with embossed carrier tape packing. Idel for power source circuits, DC-DC converters, DC-AC inverters |
OCR Scan |
100khzsilm845silm855silm830 | |
45TIContextual Info: SMT Power Inductor SIQ74X Type Features • ■ ■ ■ ■ High current 10A, 1.4uH , SMD type. Magnetically shielded, suitable for high density mounting. High energy storage and low DCR. Provided with embossed carrier tape packing. Idel for power source circuits, DC-DC converters, DC-AC inverters |
OCR Scan |
siq74x100khzl0siq74bsi074a+2 | |
|
Contextual Info: WS57C49C HIGH SPEED 8Kx 8 CMOS PROM/RPROM KEY FEATURES • Pin Compatible with Bipolar PROMs • Immune to Latch-UP • Ultra-Fast Access Time — *ACC = 2 5 n s — — Up to 200 mA t CS = 1 2 n s • Low Power Consumption • Fast Programming • ESD Protection Exceeds 2000 V |
OCR Scan |
ws57c49cp-45d-45ji-45ti+4 | |
|
Contextual Info: P4C1048L LOW POWER 512K x 8 CMOS STATIC RAM FEATURES Common Data I/O Three-State Outputs Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Automatic Power Down Packages —32-Pin 600 mil Plastic and Ceramic DIP —32-Pin 445 mil SOP —32-Pin TSOP II |
Original |
p4c1048l32-pinam129sram129+1 | |
|
Contextual Info: P4C1256 HIGH SPEED 32K x 8 STATIC CMOS RAM FEATURES Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Fast tOE Automatic Power Down Packages —28-Pin 300 mil DIP, SOJ, TSOP —28-Pin 600 mil Ceramic DIP —28-Pin CERPACK —28-Pin LCC 350 mil x 550 mil |
Original |
p4c1256--28-pin--32-pin144-bit+1 | |
SK373AContextual Info: SMT Power Inductor SIQ73X Type Features • ■ ■ ■ ■ High current 9.0A, 0.45uH , SMD type. Magnetically shielded, suitable for high density mounting. High energy storage and low DCR. Provided with embossed carrier tape packing. Idel for power source circuits, DC-DC converters, DC-AC inverters |
OCR Scan |
siq73xi00khzsi073ask373a+2 | |
|
Contextual Info: FT61256 L HIGH SPEED 32K x 8 STATIC CMOS RAM FEATURES Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Fast tOE Automatic Power Down Packages —28-Pin 300 mil DIP, SOJ, TSOP —28-Pin 300 mil Ceramic DIP —28-Pin 600 mil Ceramic DIP —28-Pin CERPACK |
Original |
ft61256--28-pin--32-pin144-bit | |
|
|
|||
vvq1000
Abstract: AXT100-FC26-3 AXT100-FC26-1 VVQ1000-50A-C6 VVQ1000-50A-C4 electrical wiring vvq1000 51a c6 45T1 45TI VVQ1000-51A-C4
|
Original |
24vdc12vdcaxt100-fc26-1axt100-fc26-2+9 | |
57C191C
Abstract: A921A 57c291 57c191
|
OCR Scan |
ws57c191c/291am27s191/291n82s191+6 | |
MATRA MHS 80c51
Abstract: MHS 80C31 MATRA MHS 80c31 80C51-12 80C31 TEMIC 80c51t 80C51-36 80C51-30 ANM031
|
OCR Scan |
80c31/80c5180c3180c5180c51c+9 | |
P4C1048L
Abstract: 45cw P600
|
Original |
p4c1048l--32-pinsram129oct-05+2 | |
|
Contextual Info: ESM T Preliminary F59D4G81A Operation Temperature Condition -40 C~85 C Flash 4 Gbit (512M x 8) 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit |
Original |
f59d4g81a250us | |
|
Contextual Info: P4C1256 HIGH SPEED 32K x 8 STATIC CMOS RAM FEATURES Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Fast tOE Automatic Power Down Packages —28-Pin 300 mil DIP, SOJ, TSOP —28-Pin 600 mil Ceramic DIP —28-Pin CERPACK —28-Pin SOP —28-Pin LCC 350 mil x 550 mil |
Original |
p4c1256--28-pin--32-pin144-bit+1 | |
|
Contextual Info: SMT Power Inductor SISH811 Type Features • Hight current 3.5A, 10uH , SMD type. ■ Unshielded. ■ Self-leads, suitable for high density mounting. ■ High energy storage and low DCR. ■ Provided with embossed carrier tape packing. ■ Idel for power source circuits, DC-DC converters, DC-AC inverters |
OCR Scan |
sish811sish811-2r2sish811-4r7sish811-331+4 | |
13005
Abstract: HMP1340 13005 A HMP1345 13005 applications
|
OCR Scan |
hmp1335hmp1348shmp1335-hmp1340-+5 | |
AT27C010 15DC
Abstract: AT270010L-70DM
|
OCR Scan |
at27c010/lat27c010lat27c01q32-lead+6 | |
1519B
Abstract: P4C1256 P4C1256L
|
Original |
p4c1256--28-pin--32-pinloc00+2 | |