N82S191 Search Results

smd marking WS

Contextual Info: WS57C191B/291B MILITARY HIGH SPEED 2 K x 8 CMOS PROM/RPROM KEY FEATURES • • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs Ultra-Fast Access Time — 45 ns • Immune to Latch-UP • Low Power Consumption — Up to 200 mA • Fast Programming

2 k bipolar prom

Abstract: 3A4C
Contextual Info: WS57C191 C/291 C MILITARY HIGH SPEED 2 K x 8 CMOS PROM/RPROM KEY FEATURES • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs • Ultra-Fast Access Time — *ACC = 35 ns — t c s = 20 ns • Immune to Latch-UP • Low Power Consumption — Up to 200 mA

Contextual Info: WS57C191 C/291 C HIGH SPEED 2 K x 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs — *ACC = 25 ns — t c s = 12 ns • Immune to Latch-UP • Low Power Consumption — Up to 200 mA

smd marking 25J

Contextual Info: WS57C191 C/291 C HIGH SPEED 2K X 8 CMOS PROM/RPROM KEY FEATURES • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs • Ultra-Fast Access Time — Ucc = 25 ns — t c s = 12 ns • Immune to Latch-UP • Low Power Consumption — Up to 200 mA • ESD Protection Exceeds 2000V

WS57C191C55DMB

Abstract: N82S1
Contextual Info: WS57C191C/291C MILITARY HIGH SPEED 2Kx 8 CMOS PROM/RPROM KEY FEATURES • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs • Ultra-Fast Access Time f ACC = 35 ns — t c s = 20 ns • Immune to Latch-UP • Low Power Consumption — Up to 200 mA

Contextual Info: WS57C191 C/291 C PRELIMINARY HIGH SPEED 2K x 8 CMOS PROM/RPROM K E Y FEA TU R E S • Ultra-Fast Access Time • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs — t ACC = 25 ns *cs 12 ns • Low Power Consumption • immune to Latch-UP — Up to 200 mA

smd marking 25J

Abstract: WS57C291C-45TI WS57C291C-35TMB MARKING 25J
Contextual Info: WS57C191C/291C HIGH SPEED 2K x 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs — t ACC = 25 ns — t CS = 12 ns • Immune to Latch-UP • Low Power Consumption • Fast Programming

82S191

Abstract: N82S191F 82s141 N82S191 signetics 82S1 SIGNETICS prom 82S140 82S190 N82S190F Signetics 82S191
Contextual Info: S ig n e tic s Memories - BiPolar Proms N82S190, N82S191 -1 3384 Bit Field Programmable BiPolar Prom C O N N E C T IO N D IA G R A M A id G E N E R A L D E S C R IP T IO N The 8 2 S 1 9 0 and 8 2 S 1 9 1 are field program m able, w hich means that cu stom patterns are im m ediately available by

35P marking

Contextual Info: WS57C191 C/291 C HIGH SPEED 2Kx 8 CMOS PROM/RPROM KEY FEATURES • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs • Ultra-Fast Access Time — tAc c = 25 ns — tCs = 12 ns • Immune to Latch-UP • Low Power Consumption • Fast Programming

RF wafer 15w

Contextual Info: WAFER SCALE INTEGRATION DeT | clS3cÌ b ciO QOGDISM 7 % Æ Æ ~ÎË WS57C191B/291B PRELIMINARY WAFERSCALE INTEGRATION, INC. HIGH SPEED 2K x 8 CMQS RPROM KEY FEATURES Ultra-Fast Access Time . Low Power Consumption Pin Compatible with AM27S191/291 and N82S191 Bipolar PROMs

Contextual Info: WAFER SC AL E I N T E G R A T I O N de J ts ^ s^ g ^ Qoooisa t, ^ T - V Ä - / 3 -Z5 WS57C191B/291B ADVANCE INFORMATION WAFERSCALE INTEGRATION, INC. 2K x 8 CMOS PROM KEY FEATURES * • Ultra-Fast Access Tim e — • Pin C om patible w ith AM27S191/291 and N82S191 B ipolar PROMs

57C191

Abstract: WS57C291-55
Contextual Info: WAFER IM SCALE M INTEGRATION DE^j 'iSmt.'iG □ G D Ü 1 2 M r fi 1 f 4 D T-^-/i'ÿ WS57C191/291 PRELIMINARY WAFERSCAI.E INTEGRATION, INC. 2K x 8 CMOS PROM KEY FEATURES • Pin Com patible with AM27S191/291 and N82S191 Bipolar PROMs • Im m une to Latch-Up

N82S191

Abstract: WS57C191C WS57C191C-25D WS57C191C-25J WS57C291C
Contextual Info: WS57C191C/291C HIGH SPEED 2K x 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs — t ACC = 25 ns — t CS = 12 ns • Immune to Latch-UP • Low Power Consumption • Fast Programming

Contextual Info: WS57C191 C/291 C MILITARY HIGH SPEED 2K x 8 CMOS PROM/RPROM KEY FEATURES • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs • Ultra-Fast Access Time — l ACC = 35 ns — *cs = 20 ns • Low Power Consumption • Immune to Latch-UP • Fast Programming

57C191C

Abstract: A921A 57c291 57c191
Contextual Info: WS57C191 C/291 C HIGH SPEED 2 K x 8 CMOS PROM/RPROM KEY FEATURES • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs • Ultra-Fast Access Time “ ACC = 25 ns — t c s = 12 ns • Immune to Latch-UP • Low Power Consumption — Up to 200 m A

cerdip z PACKAGE

Abstract: A4 marking diode dip N82S191 WS57C191C WS57C191C-35DMB WS57C191C-45DMB WS57C191C-55DMB WS57C291C
Contextual Info: WS57C191C/291C MILITARY HIGH SPEED 2K x 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs — t ACC = 35 ns — t CS = 20 ns • Immune to Latch-UP • Low Power Consumption • Fast Programming

Contextual Info: WS57C191 C/291 C HIGH SPEED 2Kx 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs — t ACC = 25 ns — t c s = 12 ns • Immune to Latch-UP • Low Power Consumption — Up to 200 mA • ESD Protection Exceeds 2000V

57C291

Abstract: B35t
Contextual Info: WS57C191B/291B HIGH SPEED 2K x 8 CMOS PROM/RPROM KEY FEATURES • U ltra-Fast A ccess T im e _ 3 5 ns • Pin C om patible w ith A m 27S 191/291 and N82S191 B ipolar PRO M s • Low P ow er C onsum ption • Im m u ne to Latch-U P • Fast P ro gram m ing

Contextual Info: WS57C191 C/291 C HIGH SPEED 2 K x 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time — lACC = 25 • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs ns — t c s = 12 ns • Immune to Latch-UP • Low Power Consumption — Up to 200 mA

Contextual Info: WS57C191B/291B MILITARY HIGH SPEED 2 K x 8 CMOS PROM/RPROM KEY FEATURES • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs • Ultra-Fast Access Time — 45 ns • Low Power Consumption • Immune to Latch-UP • Fast Programming — Up to 200 mA

Contextual Info: WS57C191 C/291 C MILITARY HIGH SPEED 2 K x 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs — Iacc = 35 ns — t c s = 20 ns • Immune to Latch-UP • Low Power Consumption — Up to 200 mA

Contextual Info: WS57C191 C/291 C MILITARY HIGH SPEED 2 K x 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs — *ACC = 35 ns — t c s = 20 ns • Immune to Latch-UP • Low Power Consumption — Up to 200 mA

smd a4t

Abstract: A4t 3 smd A4t smd WS57C291B-45TMB AM27S191 N82S191 WS57C191 WS57C291B-45KMB 35P marking 100 microfarad
Contextual Info: WS57C191B/291B HIGH SPEED 2Kx 8 CMOS PROM/RPROM FOR MAINTENANCE PURPOSES ONLY! NOT TO BE USED FOR NEW DESIGNS. SEE WS57C191 C/291 C FOR NEW VERSION! KEY FEATURES • Ultra-Fast Access Time _ 3 5 ns • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs

Contextual Info: WS57C191/291 WAFERSCALF INTEGRATION, INC. HIGH SPEED 2K x 8 CMOS RPROM KEY FEATURES • Ultra-Fast Access Time • Pin Compatible With AM27S191/291 and N82S191 Bipolar PROMs — 45 ns • Low Power Consumption • Immune to Latch-Up — 225 mW Active Power