N82S1 Search Results

82S185

Abstract: 82S184 SIGNETICS* fusing procedure SIGNETICS* fusing procedure 185
Contextual Info: FEATURES • Low power dissipation: SO^W/bit typ • Address a cce ss time: N82S184/185: 100ns max S 8 2 S 184/185: 150ns max • Input loading: N82S184/185: -100MA max S82S184/185: -150/iA max • On-chip address decoding • Output options: 82S184: Open collector

74s* programming

Abstract: N82S16 prom 256x4 bit MCM10149 MCM7620 MCM7621 MCM7641C MCM7643C MCM7681C N82HS137
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR M EM ORY CROSS REFERENCE BIPOLAR M EM O RY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIGNETICS T.l. SIGNETICS *10149 N82S130 N82S131

N82S137F

Abstract: N82S136 82S137 82S136 N82S136F N82S137 SIGNETICS prom 2.1 connection diagram
Contextual Info: S ig n e tic s Memories - Bipolar Proms N82S136, N82S137 — 4096 Bit Field Programmable Bipolar Prom C O N N E C T IO N D IA G R A M G E N E R A L D E S C R IP T IO N T he 8 2 S 1 3 6 and 8 2 S 1 3 7 are field programmable. The standard 8 2 S 1 3 6 and 8 2 S 1 3 7 are supplied w ith all outputs

N82S123F

Abstract: N82S123N N82S23F 82S123 programming N82S23N 82S123 SIGNETICS prom signetics 82S123 n82s123 82S23
Contextual Info: Signetics Mem ories - Bipolar Prom s Programming Signetics P R O M S CONNECTION DIAGRAM PROM programming is available through ITT Gemini for further details please contact your local sales office. N82S23/N82S123 PROM 256 Bit Bipolar GENERAL DESCRIPTION The 82S23 and 82S123 are field programmable, which

82s185

Contextual Info: FEATURES • Low power dissipation: 50/xW/bit typ • Address access time: N82S184/185: 100ns max S82S184/185: 150ns max • Input loading: N82S184/185: -1 0 0 MA max S82S184/185: -150/xA max • On-chip address decoding • Output options: 82S184: Open collector

smd marking WS

Contextual Info: WS57C191B/291B MILITARY HIGH SPEED 2 K x 8 CMOS PROM/RPROM KEY FEATURES • • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs Ultra-Fast Access Time — 45 ns • Immune to Latch-UP • Low Power Consumption — Up to 200 mA • Fast Programming

2 k bipolar prom

Abstract: 3A4C
Contextual Info: WS57C191 C/291 C MILITARY HIGH SPEED 2 K x 8 CMOS PROM/RPROM KEY FEATURES • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs • Ultra-Fast Access Time — *ACC = 35 ns — t c s = 20 ns • Immune to Latch-UP • Low Power Consumption — Up to 200 mA

82S104

Abstract: N82S105N ifr 540 82S105 N82S106N N82S107N n82s106 1x48 N82S104N
Contextual Info: Signetics Memories - Bipolar FP LS N82S106, N82S107 Field Pro­ grammable RO M Patch 16 x 48 x 8 Cont. R E FER EN C E T A B L E TYPE NO. STOCK NO. N82S106N N82S107N 56478R 56479G O U T L IN E DRW G. NO. 5 5 IM82S104/105 Field Programmable Logic Sequencer

N82S126F

Abstract: N82S129N N82S129F N82S126N 82S129 N82S126 itt 129 ane fuse led matrix 32X32 82S126
Contextual Info: S ig n e tic s Memories - Bipolar Proms N82S126, N82S129 - 1024 Bit Field Programmable Bipolar Prom C O N N E C T IO N D IA G R A M G E N E R A L D E S C R IP TIO N The 82S 126 and 82S 129 are fie ld program m able, w hich means th a t custom patterns are im m e diately available by

82S215

Abstract: N82S15N n82s215
Contextual Info: Signetics M em ories - Bipolar Rom N82S15 — 4096 Bit Bipolar Rom 512 x 8 C O N N E C T IO N D IA G R A M G E N E R A L D E S C R IP T IO N The 8 2 S 2 1 5 includes on-chip decodin g and 2 ch ip enable in­ puts for ease of m em ory expansion. T h e y feature tri-state

Contextual Info: WS57C191 C/291 C HIGH SPEED 2 K x 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs — *ACC = 25 ns — t c s = 12 ns • Immune to Latch-UP • Low Power Consumption — Up to 200 mA

smd marking 25J

Contextual Info: WS57C191 C/291 C HIGH SPEED 2K X 8 CMOS PROM/RPROM KEY FEATURES • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs • Ultra-Fast Access Time — Ucc = 25 ns — t c s = 12 ns • Immune to Latch-UP • Low Power Consumption — Up to 200 mA • ESD Protection Exceeds 2000V

WS57C191C55DMB

Abstract: N82S1
Contextual Info: WS57C191C/291C MILITARY HIGH SPEED 2Kx 8 CMOS PROM/RPROM KEY FEATURES • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs • Ultra-Fast Access Time f ACC = 35 ns — t c s = 20 ns • Immune to Latch-UP • Low Power Consumption — Up to 200 mA

Contextual Info: WS57C191 C/291 C PRELIMINARY HIGH SPEED 2K x 8 CMOS PROM/RPROM K E Y FEA TU R E S • Ultra-Fast Access Time • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs — t ACC = 25 ns *cs 12 ns • Low Power Consumption • immune to Latch-UP — Up to 200 mA

SIGNETICS

Abstract: N82S137 signetics bipolar memory cross reference N82S191 n82s25 TBP28P86 74S289 N82S141 N82S129 TBP24S41
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR MEMORY CROSS REFERENCE BIPOLAR MEMORY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIG NETICS T.l. SIG NETICS *10149 N82S130 N82S131

82S114

Abstract: N82S114N fet ifr 540 82S214 82S215 N82S114F S82S114F signetics 82S 56306E
Contextual Info: S ig n e tic s Memories - Bipolar Proms C O N N E C T IO N N82S114 - 2048 Bit Field Programmable Bipolar Prom 256 x 8 G E N E R A L D E S C R IP T IO N T h e 8 2 S 1 14 is field program m able and include on-chip decoding and 2 ch ip enable inputs far ease o f m em ory

N82S141F

Abstract: 82s141 82S140 N82S140 N82S140F N82S141 S82S140 S82S141 SIGNETICS prom ttl 512 82S141/8708+prom
Contextual Info: Signetics Memories - Bipolar Proms N82S140, N82S141 - 4 0 9 6 Bit Field Programmable Prom 512 x 8 C O N N E C T IO N D IA G R A M 13 G E N E R A L D E SC R IPTIO N The 82S 140 and 82S141 are fie ld program m able. The standard 82S140 and 82S141 are supplied w ith all outputs

25CC

Abstract: 82S183 N82S183 S82S183 8192-BIT
Contextual Info: BIPOLAR MEMORY DIVISION MAY 1982 8192-BIT BIPOLAR PROM 1024 X 8 82S183 (T.S.) ABSOLUTE MAXIMUM RATINGS PARAMETER Vcc VIN ta Ts t g Supply voltage Input voltage Temperature range Operating N82S183 S82S183 Storage RATING UNIT +7 + 5 .5 Vdc V dc °C 0 to + 7 5

N82S131F

Abstract: N82S131N 82s131 signetics n82s130 82S130 82S131 N82S130F N82S130N N82S131
Contextual Info: S ig n e tic s Mem ories - Bipolar Prom s N82S130, N82S131 - 2048 Bit Field Programmable Bipolar Prom C O N N E C T IO N D IA G R A M G E N E R A L D E S C R IP T IO N T h e 8 2 S 1 3 0 a nd 8 2 S 1 31 are f ie ld p ro g ra m m a b le , w h ic h m eans th a t c u s to m p a tte rn s are im m e d ia te ly a v a ila b le b y

82S112

Abstract: 82S12 N82S112
Contextual Info: S ig n e tic s Memories - Bipolar SAM N82S12, N82S112 - 32 Bit Bipolar Multi- port Memory 8 x 4 G E N E R A L D E S C R IP TIO N Data is stored in a single storage m a trix w hich is add­ ressed via 2 independent sets o f address in puts, designated respectively as P ort A and P o rt B.

S8251

Abstract: 82S11 56267R signetics 82S1 82S10 82S111 N82S10 A4T10 N82S11F
Contextual Info: Signetics Memories - Bipolar Ram N82S10, N82S110, 82S11, 82S111 — 1024 Bit Bipolar Ram C O N N E C TIO N D IA G R A M G E N E R A L D E SC R IPTIO N The 8 2 S 1 0 /1 1, w ith a typ ic a l access tim e o f 30ns, is ideal fo r cache b u ffe r app lica tions and fo r systems requiring very

82S191

Abstract: N82S191F 82s141 N82S191 signetics 82S1 SIGNETICS prom 82S140 82S190 N82S190F Signetics 82S191
Contextual Info: S ig n e tic s Memories - BiPolar Proms N82S190, N82S191 -1 3384 Bit Field Programmable BiPolar Prom C O N N E C T IO N D IA G R A M A id G E N E R A L D E S C R IP T IO N The 8 2 S 1 9 0 and 8 2 S 1 9 1 are field program m able, w hich means that cu stom patterns are im m ediately available by

35P marking

Contextual Info: WS57C191 C/291 C HIGH SPEED 2Kx 8 CMOS PROM/RPROM KEY FEATURES • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs • Ultra-Fast Access Time — tAc c = 25 ns — tCs = 12 ns • Immune to Latch-UP • Low Power Consumption • Fast Programming

RF wafer 15w

Contextual Info: WAFER SCALE INTEGRATION DeT | clS3cÌ b ciO QOGDISM 7 % Æ Æ ~ÎË WS57C191B/291B PRELIMINARY WAFERSCALE INTEGRATION, INC. HIGH SPEED 2K x 8 CMQS RPROM KEY FEATURES Ultra-Fast Access Time . Low Power Consumption Pin Compatible with AM27S191/291 and N82S191 Bipolar PROMs