SR81995LV024 Search Results

IS62LV1024-35Q

Abstract: IS62LV1024-35T IS62LV1024-45Q IS62LV1024-45T IS62LV1024-55Q IS62LV1024-55T TSOP 1378
Contextual Info: ISSI ISSI IS62LV1024 IS62LV1024 128K x 8 LOW VOLTAGE AND POWER CMOS STATIC RAM FEATURES • High-speed access time: 35, 45, 55, 70 ns • Low active power: 100 mW typical • Low standby power: 50 µW (typical) CMOS standby • Output Enable (OE) and two Chip Enable

Contextual Info: 128K x 8 LOW VOLTAGE AND POWER CMOS STATIC RAM NOVEMBER 1996 FEATURES DESCRIPTION • High-speed access time: 35, 45, 55, 70 ns The/557 IS62LV1024 is a low voltage and low power, 131,072word by 8-bit CMOS static RAM. It is fabricated using /5 5 /'s high-performance CMOS technology. This highly reliable pro­

TSOP 1378 IR

Contextual Info: I S 6 2 L V 1 2 ISSI 4 128K x 8 LOW VOLTAGE AND POWER CMOS STATIC RAM N o v e m b e r 1996 FEATURES DESCRIPTION • High-speed access time: 35, 45, 55, 70 ns T h e /5 5 / IS 62LV 1024 is a low voltage and low power, 131,072word by 8-bit C M O S static RAM. It is fabricated using /5 5 /s

IS62LV1024-45Q

Abstract: IS62LV1024-55Q 12130
Contextual Info: 128K x 8 LOW VOLTAGE AND POWER CMOS STATIC RAM NOVEMBER 1996 FEATURES DESCRIPTION • H igh-speed access tim e: 35, 45, 55, 70 ns The/557 IS62LV1024 is a low voltage and low power, 131,072word by 8-bit CMOS static RAM. It is fabricated using /5 5 /'s high-performance CMOS technology. This highly reliable pro­

TSOP 1378

Abstract: IS62LV1024LL-70T IS62LV1024L IS62LV1024LL IS62LV1024LL-70Q
Contextual Info: IS62LV1024L IS62LV1024L/LL IS62LV1024LL ISSI ISSI 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM FEATURES • Access times of 70 ns and 100 ns • Low active power: 60 mW typical • Low standby power: 15 µW (typical) CMOS standby • Low data retention voltage: 2V (min.)

Contextual Info: 128K x 8 LOW VOLTAGE AND POWER CMOS STATIC RAM NOVEMBER 1996 FEATURES DESCRIPTION • H igh-speed access tim e: 35, 45, 55, 70 ns The/557 IS62LV1024 is a low voltage and low power, 131,072word by 8-bit CMOS static RAM. It is fabricated using /5 5 /'s high-performance CMOS technology. This highly reliable pro­

Contextual Info: IS62LV1024L IS62LV1024LL — 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM a d v a n c e in f o r m a t io n FEBRUARY 1997 FEATURES DESCRIPTION • Access times of 35, 45, 55, and 70 ns T he I S S I IS 62LV 1024L and IS62LV 1024LL are low pow er and low Vcc, 1 31,072-word by 8-bit C M O S static RAM s. T hey

IS62LV1024-55Q

Abstract: IS62LV1024-35Q IS62LV1024-35T IS62LV1024-45Q IS62LV1024-45T IS62LV1024-55T
Contextual Info: ISSI ISSI IS62LV1024 IS62LV1024 128K x 8 LOW VOLTAGE AND POWER CMOS STATIC RAM FEATURES • High-speed access time: 35, 45, 55, 70 ns • Low active power: 100 mW typical • Low standby power: 50 µW (typical) CMOS standby • Output Enable (OE) and two Chip Enable