IRFI5210 Search Results

IRFI5210

Abstract: IRF5210
Contextual Info: PD - 9.1404A IRFI5210 PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.06Ω G ID = -23A

Contextual Info: PD - 9.1404A International IQ R Rectifier IRFI5210 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm P-Channel Fully Avalanche Rated Vdss = -1 0 0 V RüS on = 0.06Î2

b 1370

Abstract: IRFI5210
Contextual Info: PD - 9.1404A IRFI5210 PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.06Ω G ID = -23A

100v 23A P-Channel MOSFET

Abstract: IRFI5210 IRF5210 of what package type b 1370
Contextual Info: PD - 9.1404A IRFI5210 PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.06Ω G ID = -23A

EA MOSFET 63 ng

Abstract: IRFI5210
Contextual Info: P D - 9 .1 4 0 4 A International Rectifier TOR IRFI5210 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS <S> Sink to Lead Creepage Dist. = 4.8mm P-Channel Fully Avalanche Rated V dss = -1 0 0 V

FI840

Abstract: 250PA10
Contextual Info: i . I International IOR Rectifier PRELIMINARY PD 9 .1 4 0 4 IRFI5210 HEXFET Power MOSFET • Advanced Process Technology • Ultra Low On-Resistance • Isolated Package • High Voltage Isolation = 2.5KVRMS d> • Sink to Lead Creepage Dist. = 4.8mm • P-Channel

IRFI5210

Contextual Info: Previous Datasheet Index Next Data Sheet PRELIMINARY PD 9.1404 IRFI5210 HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l P-Channel l Fully Avalanche Rated

sumida 94V-0

Abstract: inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET
Contextual Info: International Rectifier The IGBT SIP & HEXPak Navigator Effective 8 September, EXISTING Products NEW Products UPCOMING Products POTENTIAL Products released to production in last 6-9 months to be released within next 3-4 months no current plans. see bus.mgmt.

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

IRFBE30 equivalent

Abstract: irf9640 REPLACEMENT GUIDE IRGKI200F06 IRGP440U replacement IRF3205 smd IRGBC20FD2 IRFK3D450 IRFBg30 equivalent IRGNIN150M06 irc540
Contextual Info: Electronic Switches Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566

IRF4905 equivalent

Abstract: 800v irf IRFBE30 equivalent transistor equivalent irf510 IRF3415 equivalent IRF3205 IRF1010E IRFP064N equivalent IRFBg30 equivalent IRF3205 equivalent
Contextual Info: International Rectifier The HEXFET Through Hole Navigator COLOR CODING: EXISTING Products NEW Products released to production in last 6-9 months UPCOMING Products to be released within next 3-4 months POTENTIAL Products no current plans. see bus.mgmt.

IRF1010E

Abstract: irf 4110 irfbf30 IRFPF50 irf7333 IRFP044N IRF4905 equivalent Irf520N IRFD110 IRF7606
Contextual Info: HEXFET Power MOSFETs www.irf.com ID ID V BR DSS Continuous RΘ PD Drain-to-Source R DS(on) Continuous On-State Drain Current Drain Current Max. Thermal Max. Power Breakdown 70° Part Resistance Voltage Resistance 1 Dissipation 1 25°C (A) (V) (Ω ) (°C/W)