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Vishay Siliconix IRFI840GPBF MOSFET N-CH 500V 4.6A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFI840GPBF	Tube	284		1	1 $2.14 10 $2.14 100 $1.75 1000 $1.75 10000 $1.75	Buy Now
New Advantage Corporation	IRFI840GPBF		1,100		1	1 - 10 - 100 $1.88 1000 $1.88 10000 $1.74	Buy Now
Vishay Siliconix IRFI840GLCPBF MOSFET N-CH 500V 4.5A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFI840GLCPBF	Tube	102		1	1 $1.49 10 $1.49 100 $1.46 1000 $1.46 10000 $1.46	Buy Now
Vishay Siliconix IRFI840G MOSFET N-CH 500V 4.6A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFI840G	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC IRFI840BTU N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFI840BTU	Bulk			533	1 - 10 - 100 - 1000 $0.56 10000 $0.56	Buy Now
Vishay Siliconix IRFI840GLC MOSFET N-CH 500V 4.5A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFI840GLC	Tube			1,000	1 - 10 - 100 - 1000 $3.48 10000 $3.48	Buy Now

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FI840 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: PD-9.1211 International Rectifier IRFIBC40GLC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 3 0 V V g s Rating Isolated Package High Voltage lsolation= 2.5KVRMS ® Sink to Lead Creepage Dist.= 4.8mm Repetitive Avalanche Rated	OCR Scan	IRFIBC40GLC D-6380	PDF
FI840 Contextual Info: PD -9 .1344A International I R Rectifier IRLIZ24N PRELIMINARY HEXFET Power MOSFET • • • • • • Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS I; Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated	OCR Scan	IRLIZ24N O-22C FI840	PDF
Contextual Info: « PD - 9.1378A International IOR Rectifier IRLI2203N PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated	OCR Scan	IRLI2203N 6598C	PDF
91208 Abstract: IRFI840G Contextual Info: International IOR Rectifier HEXFEl Power MOSFETs Qg Total V BR DSS 'D Drain-to-Source DS(on) Continuous Breakdown On-State Drain Current Part Voltage Resistance 25°C Number (V) (A) Continuous Drain Current 100° () R PD Max. Thermal Max. Power Resistance Dissipation	OCR Scan	O-220 FI740G FI840G O-262 TQ-220AB O-247 91208 IRFI840G	PDF
X1DV Abstract: IRFI840G IRLIZ24N IRLZ24N Contextual Info: P D -9 .1 3 4 4 A International M R Rectifier IRLIZ24N P R E L IM IN A R Y HEXFET Power M O S F E T • • • • • • Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm	OCR Scan	IRLIZ24N T0-220 X1DV IRFI840G IRLIZ24N IRLZ24N	PDF
IRLI3705G Abstract: linear maring code fortune year date Code Contextual Info: PD-9.1094 International «»Rectifier IRLI3705G HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Logic-Level Gate Drive RDS on Specified at V g s = 5 .0 V & 10V	OCR Scan	IRLI3705G O-220 insulatin13215, linear maring code fortune year date Code	PDF
LD-18A REGULATOR Abstract: LD18A AH8A Contextual Info: PD - 9.1497A International IQ R Rectifier IRLI540N PRELIMINARY HEXFET Pow er M O SFET • • • • • • Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated	OCR Scan	1497a IRLI540N O-220 LD-18A REGULATOR LD18A AH8A	PDF
FI840 Abstract: IRL540N IRLI540N Contextual Info: PD - 9.1497A IRLI540N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 100V	Original	IRLI540N O-220 FI840 IRL540N IRLI540N	PDF
FI840 Abstract: 250PA10 Contextual Info: i . I International IOR Rectifier PRELIMINARY PD 9 .1 4 0 4 IRFI5210 HEXFET Power MOSFET • Advanced Process Technology • Ultra Low On-Resistance • Isolated Package • High Voltage Isolation = 2.5KVRMS d> • Sink to Lead Creepage Dist. = 4.8mm • P-Channel	OCR Scan	IRFI5210 FI840 250PA10	PDF
fi840 Abstract: IRL540N IRLI540N Contextual Info: PD - 9.1497A IRLI540N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 100V	Original	IRLI540N O-220 fi840 IRL540N IRLI540N	PDF