IRFF230 Search Results

F230

Abstract: IRFF230 IRFF231
Contextual Info: FUT FIELD EFFECT POWER TRANSISTOR IRFF230.231 5.5 AMPERES 200,150 VOLTS RDS ON = 0.4 il Prelim inary This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes G E’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

2N6798

Abstract: IRFF230
Contextual Info: IRFF230 2N6798 MECHANICAL DATA Dimensions in mm inches 8.64 (0.34) 9.40 (0.37) N-CHANNEL ENHANCEMENT MODE TRANSISTOR 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) FEATURES 0.41 (0.016) 0.53 (0.021) dia. • V(BR)DSS = 200V

IRFF230

Abstract: IRFF231 IRFF232 IRFF233
Contextual Info: Standard Power M O S F E T s - IRFF230, IRFF231 IRFF232, IRFF233 File N u m be r N-Channel Enhancement-Mode Power Field-Effect Transistors 4 .5 A a n d 5.5 A , 1 5 0 V - 2 0 0 V rDsioni = 0 .4 0 a n d 0 .6 0 N-CHANNEL enhancement MODE

Contextual Info: MOTOROLA SC XSTRS/R 12E 0 | F b3b?5S4 OOa bTOS 5 | IRFF230' IRFF233 CASE 79-05, STYLE 6 TO-39 TQ-205AF M AXIM U M RATINGS Symbol IRFF230 IRFF233 Drain-Source Voltage VDSS 200 150 Vdc Drain-Gate Voltage (Rq s = 1.0 mil) V d GR 200 150 Vdc Rating Gate-Source Voltage

IRFF231

Abstract: g358 IRFF230 IRFF232 IRFF233 g-355 2sca
Contextual Info: HE D I 4flSS45E 000^371. 1 | Data Sheet No. PD-9.354E INTERNATIONAL R E C T I F I E R tr IN T E R N A T IO N A L R E C T IF IE R I O R T-39-09 HEXFET T R A N S IS T O R S IRFF230 ^—"î0 IRFF231 N-CHANNEL POWER M O SFET s TO-39 P A C K A G E 200 Volt, 0.4 Ohm HEXFET

LS 2027

Abstract: IRFF230R IRFF231R IRFF232R IRFF233R diode deg avalanche zo 150
Contextual Info: Rugged Power MOSFETs IRFF230R, IRFF231R, IRFF232R, IRFF233R File Number 2027 Avalanche Energy Rated N-Channel Power MOSFETs 4.5A and 5.5A, 150V-200V rDS on = 0.40 and 0.6fi N -C H A N N E L E N H A N C E M E N T M O D E D Features: • S in g le pu lse avalanche e n ergy ra ted

Contextual Info: IRFF230, IRFF231, IRFF232, IRFF233 S E M I C O N D U C T O R 4.5A and 5.5A, 150V to 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.5A and 5.5A, 150V to 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRFF230

Abstract: JANTX2N6798 JANTXV2N6798
Contextual Info: PD -90431C IRFF230 JANTX2N6798 JANTXV2N6798 REF:MIL-PRF-19500/557 200V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF230 BVDSS 200V RDS(on) 0.40Ω ID 5.5A  The HEXFET technology is the key to International

IRFF230R

Contextual Info: 23 HARRIS IR FF230/231/232/233 IRFF230R/231R/232R/233R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Package Features TQ-205AF • 4.5A and 5.5A, 150V - 200V • rDS on = ° - 4 fl an(J ° - 6 fl • Single Pulse Avalanche Energy Rated*

Contextual Info: PD -90431C IRFF230 JANTX2N6798 JANTXV2N6798 REF:MIL-PRF-19500/557 200V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF230 BVDSS 200V RDS(on) 0.40Ω ID 5.5A  The HEXFET technology is the key to International

Contextual Info: H A R R IRFF230, IRFF231, IRFF232, IRFF233 S s e m i c o n d u c t o r 4.5A and 5.5A, 150V to 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.5A and 5.5A, 150V to 200V • High Input Impedance These are N-Channel enhancement mode silicon gate

TA17412

Contextual Info: h a r r is IRFF230, IRFF231, IRFF232, IRFF233 4.5A and 5.5A, 150V to 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.5A and 5.5A, 150 V to 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

55A200V

Abstract: IRFF230 TB334
Contextual Info: IRFF230 Data Sheet January 2002 5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET Features • 5.5A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: I p| j -0 P P I Q Ü Q P Q I Provisional Data Sheet No. PD-9.431 B I O R Rectifier JANTX2N6798 HEXFET POWER MOSFET JANTXV2N6798 [REF:MIL-PRF-19500/557] [GENERIC :IRFF230] N-CHANNEL 200 Volt, 0.40Q HEXFET H E X F E T techn o lo g y is th e key to Intern ation al

Contextual Info: IRFF230 Data Sheet Title FF2 bt 5A, 0V, 00 m, March 1999 5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

2N6798

Abstract: IRFF230 6150C
Contextual Info: IRFF230 2N6798 MECHANICAL DATA Dimensions in mm inches 8.64 (0.34) 9.40 (0.37) N-CHANNEL ENHANCEMENT MODE TRANSISTOR 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) FEATURES 0.41 (0.016) 0.53 (0.021) dia. • V(BR)DSS = 200V

IRFF230

Abstract: TB334
Contextual Info: IRFF230 Data Sheet March 1999 5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET • 5.5A, 200V Formerly developmental type TA17412. Ordering Information IRFF230 PACKAGE TO-205AF 1892.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

TO-254

Abstract: T0-204 IRF450 equivalent
Contextual Info: CT'Sificonix .X J P in c o r p o r a te d Industry Standard Military MOSFETs Package Equivalent Commercial Part Number 0.18 75 T0-204 IRF130 542 9.0 0.40 75 T0-204 IRF230 542 400 5.5 1.0 75 TO-204 IRF330 542 500 4.5 1.5 75 TO-204 IRF430 542 Part Number V BRJDSS

IAf630

Abstract: sfn02804 RS630 BUZ73 sfn02204 SFN02814 tx134 sgsp567 SGSP367 2SK400
Contextual Info: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max A) Po Max (W) ros (on) (Ohms) Toper Max Package Style N-Channel Enhancement-Type, (Cont'd) 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 810 600p 60n 60n 2.0 1.3 1.3 1.3 1.3 600p 600p

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

2N6788 motorola

Abstract: vmos vmos fet MFE910 n-channel vmos motorola MFE930 2N6659 2N6661 IRFF110 IRFF111
Contextual Info: FIELD-EFFECT TRANSISTORS continued Small-Signal TMOS TMOS Power MOSFETs Pow er M O SFETS, M o to ro la tra d e m a rk T M O S , a re FET transistors with an oxide insulated gate which controls vertical c u rren t flow. This basic description fits a n um ber of structures and process titles

IRF09120

Abstract: 251G FF323 IRFF310 F9122 IRFF130 IRF0120
Contextual Info: - f M % tt ± $ H V ds or € Vg s T a = 2 5 l3 Id Po a Vgs th ) I dss I gs s m tf ï & ï Ds(on) Vd s = ’l ï (V) * /CH * /CH (A) (W) (nA) Vgs (V) C m A) V ds (V) m in max (V) (V) I d (on) C is s g fs Coss C rss $1- B m % V g s =0 (max) Id (mA) ♦ typ

Contextual Info: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d escrib es 19 d evices, 12 N -C h a n n e l and 7 P -C h a n n e l, all con tain ed in the T O -2 0 5 A F T O -3 9 p ac k a g e . T his d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty