PG-TO262-3-1
Abstract: 6R099 df RN transistor A93V IPB60R099CPA IPB60R199CPA IPI60R099CPA IPW60R099CPA PG-TO247-3-41 6R099A
Contextual Info: IPI60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features 600 V 0.105 Ω 60 nC • Worldwide best Rds,on in TO262 • Ultra low gate charge PG-TO262-3-1 • Extreme dv/dt rated • High peak current capability
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ipi60r099cpapg-to262-3-16r099apg-to263-3-2+8pg-to220-3-1pg-to247-3-416r099df rn transistora93vipb60r099cpaipb60r199cpaipw60r099cpa
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6R099
Contextual Info: IPI60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R ds,on in TO220 R DS on ,max • Ultra low gate charge Q g,typ 650 V 0.099 Ω 60 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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ipi60r099cppg-to262-3-1pg-to2626r099p+16r099
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6r099a
Abstract: 6R099 IPI60R099CPA
Contextual Info: IPI60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Worldwide best Rds,on in TO262 • Ultra low gate charge PG-TO262-3-1 • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified
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ipi60r099cpapg-to262-3-16r099a6r099 |
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60r099
Abstract: 60r099p IPI60R099CP JESD22
Contextual Info: IPI60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R ds,on in TO220 R DS on ,max • Ultra low gate charge Q g,typ 650 V 0.099 Ω 60 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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ipi60r099cppg-to262-3-1pg-to26260r099p+260r099jesd22
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6r099
Abstract: 6r099 mosfet mosfet 6r099 IPI60R099CP JESD22
Contextual Info: IPI60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R ds,on in TO220 R DS on ,max • Ultra low gate charge 650 V 0.099 Ω 60 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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ipi60r099cppg-to2626r0996r099 mosfet+2mosfet 6r099jesd22
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ipb60r099cpa
Abstract: IPI60R099CPA 6R099 TO262-3-1 IPB60R199CPA IPW60R045CP PG-TO262-3-1
Contextual Info: IPI60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Worldwide best Rds,on in TO262 • Ultra low gate charge PG-TO262-3-1 • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified
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ipi60r099cpapg-to262-3-16r099apg-to220-3-1+6pg-to247-3-41ipb60r099cpa6r099to262-3-1ipb60r199cpaipw60r045cp
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60r099
Contextual Info: IPI60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R ds,on in TO220 R DS on ,max • Ultra low gate charge Q g,typ 650 V 0.099 Ω 60 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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ipi60r099cppg-to262-3-1pg-to26260r099p+160r099
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igbt welding machine scheme
Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
Contextual Info: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and
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igbt welding machine schemeikw40n120h3aircon l1smd diode schottky code marking sj+6transistor marking code 12w sot-2324v application with ice3ar0680jzinduction cooker fault findingipw65r041igw40n60h3spw55n80c3
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mosfet 6R199
Abstract: 6R199 IPB60R199CPA IPB60R099CPA IPI60R099CPA IPP60R099CPA PG-TO-263-3-2 PG-TO263 6R199A
Contextual Info: IPB60R199CPA CoolMOS Power Transistor Product Summary 600 V DS V 0.199 Ω R DS on ,max 33 Q g,typ nC Features • Lowest figure-of-merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated PG-TO263-3 • High peak current capability • Automotive AEC Q101 qualified
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ipb60r199cpapg-to263-36r199apg-to262-3-1+9pg-to220-3-1pg-to247-3-41mosfet 6r1996r199ipb60r099cpaipi60r099cpaipp60r099cpapg-to-263-3-2pg-to263
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3bs02
Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
Contextual Info: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather
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infineo866-95b152-h8926-g2-x-7600nb08-10693bs02+92bs0108p06ptda 16888ice2pcs02tda16846ice3b1565jmosfet 18p06ptda4605ice3b0365j
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FSQ510 Equivalent
Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178
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gp-20fsq510 equivalentbta12 6008bta16 6008+7zigbee interface with avr atmega16precision triac control thermostatthyristor t 558 f eupecgw 5819 diodetransistor a564a564 transistorbsm25gp120 b2
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irfb4115
Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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element-14f155-6af155-10af165-15a+11f175-25airfb4115bty79 equivalentdiode skn 21-04marking code w04 sot-23bbc 598 479 diodemw 137 600gtfk 401 s 673vishay telefunken tfk transistorinfineon transistor marking w31jys marking transistor
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6R299A
Abstract: 6r299 IPB60R099CPA IPC60R075 IPC60R075CPA IPB60R199CPA IPI60R099CPA IPP60R099CPA DS1058 IPB60R299CPA
Contextual Info: IPB60R299CPA CoolMOSTM Power Transistor Product Summary 600 V DS V 0.299 Ω R DS on ,max 22 Q g,typ nC Features • Lowest figure-of-merit Ron x Qg PG-TO263-3 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified
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ipb60r299cpapg-to263-36r299apg-to262-3-1+10pg-to220-3-1pg-to247-3-416r299ipb60r099cpaipc60r075ipc60r075cpaipb60r199cpaipi60r099cpaipp60r099cpads1058
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6r099a
Abstract: 6r099 DIODE ED 11
Contextual Info: IPW60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features 600 V 0.105 Ω 60 nC • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated PG-TO247-3 • High peak current capability
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ipw60r099cpa6r099apg-to247-3ipw60pg-to263-3-2+5pg-to262-3-1pg-to220-3-1pg-to247-3-416r099diode ed 11
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PX3544
Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
Contextual Info: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly
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lead519b152-h9345-g2-x-7600px3544px7510+8px3560ice2as01 equivalentpx3540primarion px3540ice3br0665jprimarion px3560ice3br4765ice3br1765j
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IPW60R099CPA
Abstract: PG-TO247 6R099A IPI60R099CPA IPB60R099CPA IPB60R199CPA PG-TO-247-3
Contextual Info: IPW60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated PG-TO247-3 • High peak current capability • Automotive AEC Q101 qualified
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ipw60r099cpapg-to247-36r099apg-to262-3-1+7pg-to220-3-1pg-to247-3-41pg-to247ipi60r099cpaipb60r099cpaipb60r199cpapg-to-247-3
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IPP60R099CPA
Abstract: IPB60R099CPA IPB60R199CPA PG-TO220-3 IPW60R045CPA 6R099A IPC60R075CPA
Contextual Info: IPP60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Worldwide best R ds,on in TO220 • Ultra low gate charge PG-TO220-3-1 • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified
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ipp60r099cpapg-to220-3-16r099apg-to262-3-1+6pg-to247-3-41ipb60r099cpaipb60r199cpapg-to220-3ipw60r045cpaipc60r075cpa
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df RN transistor
Abstract: 6R075P DIODE ED 26 6R075
Contextual Info: IPW60R075CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features 600 V 0.075 Ω 87 nC • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated PG-TO247-3 • High peak current capability
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ipw60r075cpapg-to247-36r075paippg-to263-3-2+7pg-to262-3-1pg-to220-3-1pg-to247-3-41df rn transistor6r075pdiode ed 266r075
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600V igbt dc to dc buck converter
Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
Contextual Info: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]
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b192-h6780-g11-x-7600sp000008186vdsl6100i-e600v igbt dc to dc buck converter+9transistor smd code package sot89bts 2140 1b data sheettransistor smd code package sot23psb 6970 hl v1.3pef 24628 e v1.2-ginfineon psb 6970pef 4265 t v2.1ht 1200-4slb 9635
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ICE3B0365J
Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
Contextual Info: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Pocket Guide www.infineon.com/powermanagement N-Channel MOSFETs 500V … 900V CoolMOSTM Partnumber RDS on , ID, Qg(typ)
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spp21n50c3spa21n50c3spi21n50c3spp16n50c3+16spa16n50c3spi16n50c3spw21n50c3spp12n50c3spa12n50c3spi12n50c3ice3b0365jice3br4765jtda16888ice2a765p2ice2pcs01gice1pcs02gice2b0565ice1pcs02ice2pcs02ipi60r099cp
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Diode SMD ED 98
Abstract: diode smd ed 06 SMD TRANSISTOR MARKING ed SMD TRANSISTOR MARKING ME transistor smd marking ND smd transistor ed transistor smd marking mE smd diode ED 46 smd diode ED me smd transistor
Contextual Info: IPB60R299CPA CoolMOSTM Power Transistor Product Summary 600 V DS 0.299 Ω R DS on ,max 22 Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features V nC • Lowest figure-of-merit Ron x Qg PG-TO263-3 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability
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ipb60r299cpa6r299apg-to263-3pg-to263-3-2+13pg-to262-3-1pg-to220-3-1pg-to247-3-41diode smd ed 98diode smd ed 06smd transistor marking edsmd transistor marking metransistor smd marking ndsmd transistor edtransistor smd marking mesmd diode ed 46smd diode edme smd transistor
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6r045a
Abstract: IPW60R045CPA 6r045 mosfet 6r045A IPW60R099CPA IPB60R099CPA IPB60R199CPA PG-TO-247-3 PG-TO247
Contextual Info: IPW60R045CPA CoolMOS Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.045 Ω 150 nC Features • Worldwide best R ds,on in TO247 • Ultra low gate charge PG-TO247-3 • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified
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ipw60r045cpapg-to247-36r045apg-to262-3-1+9pg-to220-3-1pg-to247-3-416r045mosfet 6r045aipw60r099cpaipb60r099cpaipb60r199cpapg-to-247-3pg-to247
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Diode SMD ED 98
Abstract: SMD TRANSISTOR MARKING ed transistor smd marking ND PG-TO-263-3-2 PG-TO263-3-2 diode smd ED 21 SMD TRANSISTOR MARKING ME diode smd ed 18 diode smd ed 02 Energy Me
Contextual Info: IPB60R099CPA CoolMOS Power Transistor Product Summary V DS R DS on ,max Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features 600 V 0.105 Ω 60 nC • Worldwide best Rds,on in TO263 PG-TO263-3-2 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability
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ipb60r099cpapg-to263-3-26r099apg-to262-3-1+11pg-to220-3-1pg-to247-3-41diode smd ed 98smd transistor marking edtransistor smd marking ndpg-to-263-3-2diode smd ed 21smd transistor marking mediode smd ed 18diode smd ed 02energy me
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sd 431 transistor
Abstract: 6R045A 6r045 ED-44 diode
Contextual Info: IPW60R045CPA CoolMOS Power Transistor Product Summary V DS R DS on ,max Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features 600 V 0.045 Ω 150 nC • Worldwide best R ds,on in TO247 • Ultra low gate charge PG-TO247-3 • Extreme dv/dt rated • High peak current capability
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ipw60r045cpa6r045apg-to247-3ipw60pg-to263-3-2+6pg-to262-3-1pg-to220-3-1pg-to247-3-41sd 431 transistor6r045ed-44 diode
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