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    60R099 Search Results

    60R099 Datasheets (2)

    Wuhan Xinyuan Semiconductor Co Ltd
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge CWS60R099BF
    		Wuhan Xinyuan Semiconductor Co Ltd 600V N-Channel Super Junction MOSFET CWS60R099B with 99 mOhm RDS(on), 40A continuous drain current, low gate charge, and fast switching for high efficiency power applications. Original PDF
    badge CWS60R099BZ
    		Wuhan Xinyuan Semiconductor Co Ltd 600V N-Channel Super Junction MOSFET CWS60R099B with 99 mOhm RDS(on), 40A continuous drain current, low gate charge, and fast switching for high efficiency power applications. Original PDF
    SF Impression Pixel

    60R099 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPB60R099CPATMA1

    MOSFET N-CH 600V 31A TO263-3
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    Infineon Technologies AG IPP60R099P7XKSA1

    MOSFET N-CH 600V 31A TO220-3
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    Infineon Technologies AG IPP60R099C6XKSA1

    MOSFET N-CH 600V 37.9A TO220-3
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    Infineon Technologies AG IPW60R099CPFKSA1

    MOSFET N-CH 650V 31A TO247-3
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    Infineon Technologies AG IPT60R099CM8XTMA1

    IPT60R099CM8XTMA1
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    Find more 60R099 price and stock on Findchips.com

    60R099 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    6R099

    Contextual Info: 60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R ds,on in TO220 R DS on ,max • Ultra low gate charge Q g,typ 650 V 0.099 Ω 60 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPI60R099CP PG-TO262-3-1 PG-TO262 6R099P 6R099 PDF

    60r099

    Abstract: 60r099p IPI60R099CP JESD22
    Contextual Info: 60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R ds,on in TO220 R DS on ,max • Ultra low gate charge Q g,typ 650 V 0.099 Ω 60 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPI60R099CP PG-TO262-3-1 PG-TO262 60R099P 60r099 60r099p IPI60R099CP JESD22 PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 PDF

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 PDF

    schematic diagram atx Power supply 500w

    Abstract: atx 500w schematic diagram SCHEMATIC 1000w smps atx 500w schematic 60r199 smps 800W schematic diagram smps 500w SMPS 1000W Full-bridge LLC resonant converter 1000w smps schematic
    Contextual Info: Version 1.1, February 2007 Application Note AN-CoolMOS-CP- 01 CoolMOSTM CP - How to make most beneficial use of the latest generation of super junction technology devices Authors: Fanny Bjoerk, Jon Hancock, Gerald Deboy Published by Infineon Technologies AG


    Original     		PDF

    60r099

    Contextual Info: 60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R ds,on in TO220 R DS on ,max • Ultra low gate charge Q g,typ 650 V 0.099 Ω 60 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPI60R099CP PG-TO262-3-1 PG-TO262 60R099P 60r099 PDF