HM6716 Search Results

Contextual Info: HITACHI/ L O G I C / A R R A Y S / M E M Cm 449 620 3 HITACHI/ L O G I C / A R R A Y S/ M E M ï Ë J ‘ 'HbSOa GG12SB2 04E 12582 HM6716 Series-HM6719 Series T - i / 6 - 2 3 - 1 2. 2048-word x 8-bit High Speed Static RAM 2048-word x 9-bit High Speed Static RAM

hm6716p-25

Contextual Info: Maintenance Only HM6716 Series HM6719 Series 2048-word 2048-word x x 8-bit High Speed Hi-BiCMOS Static RAM with OE 9-bit High Speed Hi-BiCMOS Static RAM (with OE) Features Fast Access Time: 25/30ns (max) Low Power Dissipation (DC): 280mW (typ.) +5V Single Supply

HM6716-30

Abstract: HM6716-25 hm-6716 HM6716
Contextual Info: HM6716 Series-HM6719 Series 2048-word x 8-bit High Speed Static RAM 2048-word x 9-bit High Speed Static RAM • • • • • • • • Features Fast Access Time: 25/30ns max Low Power Dissipation (DC): 280mW (typ.) +5V Single Supply Completely Static Memory No Clock or Timing Strobe Required

HM6716

Contextual Info: Maintenance Only HM6716 Series HM6719 Series 2048-word x 8-bit High Speed Hi-BiCMOS Static RAM with OE 2048-word x 9-bit High Speed Hi-BiCMOS Static RAM (with OE) Feature* Fast Access Time: 25/30ns (max) Low Power Dissipation (DC): 280mW (typ.) +5V Single Supply

HM6716P-25

Abstract: HM6716 HM6716-25 HM6719P-25 HM6719P-30 HM6719 HM6719-25 HM6716P30 HM6716P HM-6716
Contextual Info: HM6716, HM6719 Series 2048-word x 8-bit High Speed Hi-BiCMOS Static RAM with OE 2048-word × 9-bit High Speed Hi-BiCMOS Static RAM Features • • • • • • Pin Arrangement Fast access time: 25/30 ns (max) Low power dissipation (DC): 280 mW (typ)

HM6716-25

Abstract: HM6719P-25 HM6716
Contextual Info: LIE D I MMTbEDB D 0 2 D 7 5 3 TTS • H I T S T HM6716, HM6719 Series - H =,-Z3 - \ 2 . 2048-word x 8-bit High Speed Hi-BiCMOS Static RAM (with OE 2048-word x 9-bit High Speed Hi-BiCMOS Static RAM HITACHI/ Features • • • • • • LOGI C/ ARRAYS/ MEM

HM6716P-25

Abstract: HM6716P-30 hm6716p25 HM6716P30 HM6716-25 HM6716P HM6719P HM6719P-25
Contextual Info: Maintenance Only HM6716 Series HM6719 Series 2048-word x 8-bit High Speed Hi-BiCMOS Static RAM with OE 2048-word x 9-bit High Speed Hi-BiCMOS Static RAM (with OE) • Features • Fast Access Tim e: 25/30n s (m ax) • • Low Power Dissipation (D C ): 280m W (typ.)

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

HM6287HL-35

Abstract: HM62256BL-10 HM628128AL-5 HM6264AL-15 HM6287-70 HM621100AL-20 SP 1191 hm6285128 HM62V256L-8 HM658128
Contextual Info: Quick Reference Guide to Hitachi IC Memories Contens MOS RAM MOS Static RAM Static RAM Module MOS Pseudo Static RAM Application Specific Memory Synchronous Graphic RAM Dynamic RAM Module MOS Dynamic RAM Synchronous Dynamic RAM MOS ROM MOS Mask ROM MOS EEPROM

rca thyristor manual

Abstract: HN623258 101490
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

MK48Z02

Abstract: M58725P HARRIS 7555 HM6116LP-3 HM65161-5 HM6116LP-2 MB8128 16116FP 24PIN CY7C128-45
Contextual Info: - 16 K X ¿&&ÍEH m % i t £t OC TAAC TCAC aax ns) (us) nMOS 'f S t a t i c RAM (2 0 4 8 x 8 ) f iî TOE max (ns) TOH min (ns) TOD max (ns) « TWP «in (ns) TDS •in (ns) TDH min (ns) TWD min (ns) TWR max (ns) V D D or V C C (V) 24PIN A M IDD aax (ibA)

HM53461

Contextual Info: • APPLICATION 1. 1.1 V ID EO RAM M ultiport V ideo RAM Figure 1-1 shows general idea of video RAM. Multiport video RAM provides an internal data register SAM with the mem- Effective graphic display memory is realized by using the random port of the RAM part for graphic processor drawing

658128

Abstract: hitachi eprom HMCS6800 Hitachi Transparent Conductive Transfer Film HM658128 Static Column & Page-Mode Detector time-base corrector "magnetic tape"
Contextual Info: • APPLICATIO N 1.2. Data Retention Mode and Battery Back-up System The data in RAM is destroyed at power off. How­ ever, CMOS static RAM has a data retention mode. In this mode, power consumption at standby is ex­ tremely low and supply voltage can be reduced to

HN58C256 Series

Abstract: HN58V1001 hm514270a hm62256a HM628512 HN58C1001 Series DP-32 HN27C4096A HN62442 HM658512
Contextual Info: Package Information Contents Dual-in-line-Plastic Applicable Ics CERDIP Applicable Ics Zigzag-in-line Plastic Applicable Ics Flat Package Applicable Ics Chip Carrier Applicable Ics Package Information Dual-in-line Plastic Unit: mm • DP-18C 22.26 22.86 Max

HM6116L

Abstract: HM51256P HN62404P HM65256AP HN27C301G HN613128P hn623257 HM6147 HN27256P HN613128FP
Contextual Info: • PACKAGE INFORMATION • Dual-in-line Plastic Unit: mm {inch Scale 1/1 • D P -1 6 B • D P -1 8 19 2 Í0 756) 20 32m a , J L 2 54 - 0 .2 5 C 48 - O f <■ 0 !00 ' 0 0 10> ( o 0 19 ' 0 0 0 4 ) ■J-L 0 l5 ii '"To.OlO-.«» 2 54 * 0 25 □ Í8 • 0

TCA965 equivalent

Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated

6116 RAM

Abstract: ic 6116 TMM2016 6116 SRAM 6116 ram 6116 6116 memory 6116 CMOS RAM 6116 static RAM chip SY2128
Contextual Info: 2016/6116/9128 2K x 8 SRAM Page 1 of 5 2016/6116/9128 - 2048x8 bit Static RAM Description The 2016/6116 series of Static RAMs are 16,384 bit memories organized as 2,048 words by 8 bits and operates on a single +5V supply. 2016's and equivalents are generally NMOS or MOS

6716

Abstract: ic 2716 eprom 2716 2k eprom HM-6716 2k x 8 EPROM harris QC02 eprom 2716 HM-6758 harris eprom harris hm-6716
Contextual Info: HARRIS U li HM-6716 SEM ICO N D U CTO R P R O D U C T S DIVISION A DIVISION OF HARRIS CORPORATION 2K x 8 C M O S U V E P R O M Preview Pinout Features TO P V IE W SUPER LOW POW ER S T A N D B Y 5 0 0 /iW M A X . IN D U S T R Y S T A N D A R D P IN O U T 1

HM6116LP-3

Abstract: HM6116LP-4 upd446 HM6116LP-2 HM6116FP-3 Hitachi Scans-001 HM6116L-5 HM6116LP HM6116LP-2 HM6116LP-3 hm65161 HM6116FP-2
Contextual Info: - 50 - 16K m HM6116FP-2 % tt « CC 0-70 ÎAAC max ns) TCAC max (ns) 120 TOE max (ns) CMOS -, TOH min (ns) *• y TOD max (ns) TWP min (ns) TDS min (ns) TDH nin (ns) 80 10 70 35 HITACHI 0—70 150 100 15 50 90 40 10 0—70 200 120 15 60 120 60 10 HM6116L-2

101490

Abstract: P22n HM50464P-12 50464 ram
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY

thyristor bt 13

Abstract: transistor A5 amplifier 5.1 surrounding system circuit diagram Picture-in-Picture IC thyristor battery charging HM53462 "tape reader" hid lamp controller 1Mbit x 4 Multiport DRAM thyristor control ic with current sense
Contextual Info: Application Contents 1. Static RAM 2. Pseudo-Static RAM 3. Specific Memories for Graphic / Video Applications 4. Dynamic RAM 4-Mbit DRAM 5. Operation and Usage of SDRAM 6. EEPROM 7. FLASH MEMORY 8. EPROM/OTPROM 9. Mask ROM Programming Instruction 10. Instructions for Using Memory Devices

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154