HM50256 Search Results

50256CP

Abstract: 50256 memory HM50256ZP
Contextual Info: HM50256 Serles 262144-word x 1-bit Dynamic Random Access Memory • • • • • • • • • • • FEATURES Industry Standard 16-Pin DIP, 18-Pin PLCC, 16-Pin ZIP Single 5V ±10% On chip substrate bias generator Low Power: 350mW active, 20mW standby

hitachi tmc

Contextual Info: HBS61008 Series 262,144-word x 8-bit Dynamic Random Access Memory Module The H B 561008A /A R /B is a 2M dynamic random-access memory module organized as 262,144 x 8 bits in a leadless 30-pin single-in-line package comprising eight HM50256CP, 262,144 x 1 bit dynamic RAMs in 18-pin

Contextual Info: HB561008 Series 262,144-word x 8-bit Dynamic Random Access Memory Module The H B 561008A R /B is a 2M dynam ic random-access m em ory m odule organized as 262,144 x 8 bits in a 30-pin single in-line package com prising eight HM50256CP, 262,144 x 1 b it dynam ic RAMs in 18-pin Plastic

50256

Abstract: 50256CP
Contextual Info: HM50256 Series 262144-word x 1-bit Dynamic Random Access Memory H M 5 0 2 5 6 P S eries • FEATURES • Industry Standard 16-Pin D IP , 18-Pin P LC C , 16-Pin Z IP • Single 5 V ±10% • On chip substrate bias generator • Low Power: 35 0m W active, 20m W standby

S27121

Abstract: HB561009A-12 HB561009A-15 HB561009A-20 M040 hitachi nomenclature
Contextual Info: T A R G E T S P E C IF IC A T IO N *M040 HB561009A-12, H B561009A-15, H B561009A-20 P re lim in a ry MARCH, 1986 <§> H IT A C H I 262.144 x 9-bit Dynam ic Random Access M em ory Module • GENERAL DESCRIPTION The HB561009A is a 2304K dynamic random-access

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

HM50256P-15

Abstract: hitachi sr 604 HM50256-12 HM50256P-12 50256 HM50256-15 HM50256-20 HM50256 HM50256P-20 HM50256ZP
Contextual Info: H M 50256 Series 262144-word x 1-bit Dynamic Random Access Memory H M 50256P Series • FE A TU R E S • • • • • • • • • • Industry Standard 16-Pin DIP, 18-Pin PLCC, 16-Pin ZIP Single 5V ±10% On chip substrate bias generator Low Power: 350mW active, 20mW standby

HN462532G

Abstract: HN462732G HN4827128G-25 6116ALSP-15 482732AG 6116LP 613128P HM4816AP4 6116ALP-10 HM4816AP-4
Contextual Info: \ HITACHI IC MEMORY DATA BOOK 0 HITACHI 1 IN D EX • • • • • • Q U IC K R E F E R E N C E G U ID E TO H IT A C H I IC M EM O R IES . 8 MOS R A M .

HB561003

Abstract: hb561003b BS-610
Contextual Info: HB561003 Series 262,144-word x 9-bit Dynamic Random Access Memory Module The HB561003 is a 2.25M dynamic random-access memory module organized as 262,144 x 9 bits [bit nine PD, PQ is generally used for parity and is controlled by PCAS] in a 30-pin single in-line package comprising

rca thyristor manual

Abstract: HN623258 101490
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j

GM71256-12

Abstract: GM71256-15 50256P-15 HM50256-12 GM71256 HM50256-20 AAA2800-06 HM50256P-12 AAA2801-07 AAA2800-08
Contextual Info: - 1822 5 6 K X m « € ÌB K K B B CC TRAC max ns) TRCY A nMOS •/ f • y (ns) TCAD min (ns) TAH min (ns) Dynamic R A M (2 6 2 1 4 4 x 1 ) - / m ft * TP ain (ns) w er min (ns) TDH min (ns) TRWC min (ns) V D D or V C C (V) Ä M IDD max (mA) I DD STANDBY

HN613256P

Abstract: HN27C301 1S00G CRACK DETECTION PATTERNS HN27256
Contextual Info: • RELIABILITY OF HITACHI 1C MEMORIES 1. ST RU CTU RE 1C memories are basically classified into bipolar type and MOS type and utilized effectively by their characteristics. The characteristic of bipolar memo­ ries is high speed but small capacity, instead, MOS

CX20106A

Abstract: GL7805 GL386 GL1150 GL7809 GL317 GLC556 LA7830 GL1151 GL3401
Contextual Info: TABELA DE EQUIVALÊNCIAS SEMICONDUTORES GOLDSTAR formerly hosted by http://www.robvendas.hpg.ig.com.br/APOST/GOLD.HTM 1 of 6 G53 GAS105 LAG553-2 2SB463 - - 2SB474 GD75188 GD75189 DS1488 DS1489 SN75188 SN75189 GE4 GE1012 48-124376 MOC3012 - - GE3009 GE3010

Contextual Info: H M 5 1 2 5 8 S e r i e s 262144-word x 1-bit Static Column CMOS Dynamic RAM The HM51258 is the 262,144 word by 1 bit static column dynamic random access memory utilizing the Hitachi 2/um CMOS process. This device has static column circuit and it is good for

triac tag 8518

Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Contextual Info: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference

hm50256

Contextual Info: TARGET SPECIFICATION #M040 HB561009A-12, HB561009A-15, HB561009A-20 Preliminary MARCH, 1986 HITACHI 262.144 x 9-bit Dynam ic Random Access M em ory Module • GENERAL DESCRIPTION The HB561009A is a 2304K dynamic random-access memory module organized as 262,144 x 9-bits [bit nine PD,

Contextual Info: HB561003 Series 262,144-word x 9-bit Dynamic Random Access Memory Module The HB561003 is a 2.25M dynamic random-access memory module organized as 262,144 x 9 bits [bit nine PD, PQ is generally used for parity and is controlled by PCAS] in a 30-pin single in-line package comprising

101490

Abstract: P22n HM50464P-12 50464 ram
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY

K157UD2

Abstract: K157DA1 CD4026E K176IE12 K190KT2P NE545B K594PA1 K561LN2 KR1531LA3 K500LP216
Contextual Info: Typ K118UD1B KR119UN1 K131LA1 K131LA2 K131LA4 K131LN1 K131LR1 K131LR3 K131LR4 K131TM2 KR132RU3A,B KR132RU4A,B KM132RU5A,B KR132RU6A,B KM132RU8A,B KM132RU9A,B K136TM2 KR140MA1 KR140UD1A,B KR140UD5A KR140UD6 KR140UD8A,B KR140UD9 KR140UD11 KR140UD1208 K140UD13

KM41256-15

Abstract: KM41256-12 LH21256-15 LH21256-12 HM50257P-15 d2578 datasheet HM50257 HM50257-20 HY53C256-80 lh21256
Contextual Info: 183 - 256K m « tt £ ¿ s ig ila CC A 4 TRAC max ns) TRCY TCAD lin min (ns) (ns) nMOS / f- ^ / TAH min (ns) D y n a m i c R AM (2 6 2 1 4 4 x 1) f t tt « TP min (ns) TtCY min (ns) TDH rain (ns) TRWC min (ns) VDD or V C C (V) A M I DD max (mA) IDD STANDBY

50256P

Abstract: 50256P-12 50256CP-15 HM50256P-15 50256 50256CP hm*256p 50256-15 DP-16B
Contextual Info: H M 5 0 2 5 6 S e rie s 262144-word x 1-bit Dynamic Random Access Memory H M 50256P Series • FEATURES • • Industry Standard 16-Pin DIP, 18-Pin PLCC, 16-Pin ZIP Single 5V ±10% • On chip substrate bias generator • Low Power: 350mW active, 20mW standby

6264l

Abstract: 27C301G 27c301 fp 101g TI232 6116asp 50464cp ls 11m M62256FP 02S-0
Contextual Info: • PACKAGE INFORMATION • Dual-In-line Plastic U n it: m m inch Scale 1/1 • DP-16B • DP-18B 2 54 + 0 25 0 48 < 0 I (0 100 ‘ 0 0 1 0 ) (0 019 * 0 004) -X - 4 4 .- . 0 48 t 0 I ? 54 f 0 25 ~ (0 019 ± 0 004) (0 100 ± 0 010) • DP-20N • DP-18C 2 2 2 6 (0 1 7 6 )