HL831 Search Results

Contextual Info: HI TA CHI/ O PTOE LECTRONI CS SHE D • 44ibaGS 001207^ bñT « H I T 4 H L 8 3 1 8 E /G GaAIAsLD (-os Description The HL8318E/G are high-power 0.8 pm band GaAlAs laser diodes with a double heterojunction structure. Their internal circuit configuration is suited for operation on a single positive supply voltage. They are

HE1301

Abstract: HE8807SG HE8813VG HE8815VG HL8312E HL8319E HL8319G Hitachi Scans-001
Contextual Info: HITACHI/ OPTOELECTRONICS SHE D • HHTbEGS 0Q1EGÔ3 GGD M H I T 4 GaAiAsLD H L 8 3 1 9 E /G Description The HL8319E/G are high-power 0.8 pm band GaAlAs laser diodes with a double heterojunction structure. Their internal circuit configuration is suited for operation on a single negative supply voltage. They are

Contextual Info: HL8312E-Laser Diode Description H L 8 3 1 2 E is a h ig h -p o w e r 0 .8 iin G a A IA s la se r d io d e w ith d o u b le h e te ro ju n c tio n s tru c tu re . It is s u ita b le as a lig h t s o u rc e in o p tical disc m e m o rie s a n d v a rio u s o th e r ty p e s o f o p tic a l e q u ip ­

HE8815VG

Abstract: HE8807SG HL8311E HL8311G HL8312E Hitachi Scans-001 P015M
Contextual Info: HITACHI/COPTOELECTRONICS 54E D • MM^bSOS 001E0b3 EIE H H I T M H L8 3 1 1 E /G G a A IA s L D Description The HL8311E/G are 0.8 Jim band GaAlAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment.

Contextual Info: H IT A C H I/ OPTOELECTRONICS 54E J> m MM^bSGS 0012075 HL8315E T34 H H I T M G aAIAs LD Description The HL8315E is a high-power 0.8 |jm band GaAlAs laser diode with a double heterojunction structure. It is suitable as a light source for optical disk memories and various other types of optical equipment.

Contextual Info: HL8311E Laser D iode Description HL831 IE is a 0.8 /^m G aAIAs laser diode with double heterojunction structure. It is suitable as a light source in optical disc memories and various other types o f optical equip­ ment. A screw-on type package facilitates the adjust­

HE8813VG

Abstract: HE8403 HE8807SG HE8811 HE8815VG HL8312E HL8312G HE84-03 Hitachi Scans-001 HE8807
Contextual Info: HL8312E/G GaAIAs LD HITACHI/ OPTOELECTRONICS Description S4E T> I 4 4 ^2 0 5 G0120b7 « H i m -4 1 -os The HL8312E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment

Contextual Info: HL8314G Laser Diode Description H L 8314G is a high-pow er 0.8 G aA IA s laser d io d e with d o u b le hetero ju n ctio n stru ctu re. It is su itab le as a light source in optical disc m em o rie s and various o th e r types o f optical equip­ m en t. High pow er o u tp u t is obtained th ro u g h nonsy m m etrical coating technology for chip m irror

E12M

Abstract: SIU800 8315E
Contextual Info: HL8315E Laser Diode Description H L 8315E is a high-pow er 0.8 /um G aA IA s laser diode with d o u b le heterojunction structure. It is suitab le as a light source in optical disc m em o ries and various o th er types o f optical equip­ m ent. A screw -on type package facilitates th e a d ju st­

J835

Abstract: HL8319G
Contextual Info: HITACHI/ OPTOELECTRONICS SHE D • HHTbEGS 0Q1EGÔ3 GGD M H I T 4 GaAiAsLD H L8319E/G Description The HL8319E/G are high-power 0.8 pm band GaAlAs laser diodes with a double heterojunction structure. Their internal circuit configuration is suited for operation on a single negative supply voltage. They are

Contextual Info: HL8312E/G GaAIAs LD HITACHI/ OPTOELECTRONICS Description S4E T> I 4 4 ^ 2 0 5 G0120b7 «Him -4 1 - o s The HL8312E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment

HL8314E

Contextual Info: HL8314E Laser Diode D escription H L 8 3 1 4 E is a h ig h -p o w e r 0 .8 yum G a A lA s la se r d io d e w ith d o u b le h e te ro ju n c tio n s tru c tu re . It is s u ita b le as a lig h t s o u rc e in o p tical disc m e m o r ie s a n d v a rio u s o th e r ty p e s o f o p tic a l e q u ip ­

Contextual Info: HL8311G-Laser Diode Description H L 8 3 1 1 G is a 0 .8 /nm G a A lA s la se r d io d e w ith d o u b le h e te ro ju n c tio n s tru c tu re . It is s u ita b le a s a lig h t s o u rc e in o p tical disc m e m o rie s a n d v a rio u s o th e r ty p e s o f o p tic a l e q u ip ­

HL8314E

Abstract: XP 215 hitachi HE130 HE8815VG hitachi he1301 HL8314G HE8807SG HL8312E Hitachi Scans-001
Contextual Info: HITACHI/ OPTOELECTRONICS SHE D • MMTbSDS 0012071 3TT ■ H L 8 3 1 4 E /G _GaAIAs LD Description *4 (~ C & The HL8314E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment

HL8318G

Contextual Info: HL8318G-Laser Diode Description HL8318G is a high-power 0.8 /um GaAIAs laser diode with double heterojunction structure. It is suitable as a light source in optical disc m em ories and various other types of optical equip­ m ent. Single positive power supply is available for LD

Contextual Info: HITACHI/COPTOE LEC TRONICS 54E D • MM^bSOS 001E0b3 EIE H H I T M H L 8 3 1 1 E /G GaAIAsLD T - m Description - 0 5 The HL8311E/G are 0.8 jim band GaAlAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment.

XP 215 hitachi

Contextual Info: HITACHI/ OPTOELECTRONICS SHE D • MMTbSDS 0012071 3TT ■ H L 8 3 1 4 E /G _GaAIAs LD Description *4 (~ C & The HL8314E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment

Contextual Info: HL8312G Laser Diode Description H L 8 3 1 2 G is a high-pow er 0.8 iin G aA IA s laser d io d e with d o u b le h etero ju n ctio n structure. It is su itab le as a light source in optical disc m em o rie s and v arious o th e r types o f optical equip­

Contextual Info: HL8318E Laser Diode Description H L 8318E is a high-pow er 0.8 /xm G aA IA s laser d io d e with d o u b le h etero ju n ctio n stru ctu re. It is suitab le as a light source in optical disc m em o rie s an d v arious o th er types o f optical eq u ip ­ m en t.

HL7801

Abstract: HL7806
Contextual Info: §2. Chip Structures 2.1 Laser Diodes Structures 2.1.1 GaAlAs LD Structure The p-type active layer, in which stimulated emission enforces optical amplification figure 2-1 (a , is processed first. The p-n junction is made here for injecting minority carriers (the p-n heterojunction).

HL7801

Abstract: HL7806 HE8807CL HL7801E HL1324MF HL83M HL7831 HL83H HE8812 hitachi he1301
Contextual Info: Family Introduction Family Introduction Laser Diodes LD feckages AC \ E HL671I G HG FG TR DM BF DL HL1321BF HL132IDL HL 1341 BF HLI341DL HL 1541 BF HL1541DL HL7801E HL7802 HL7802E HL7802G HL7806 HL7806G HL7831 HL7831G HL7832 HL7832G HL7836 HL7836G HL7838

HL7806

Abstract: L8311 mb 428 ic data HLP30RGD E8811 ART106 HLP30RG HL7836
Contextual Info: §4. Fundamental Characteristics 4.1 LD Fundamental Characteristics 4.1.1 Light vs. Current Characteristics under CW Operation One of the fundamental parameters o f LDs is optical-output-power vs. forward-current light vs. current characteristic. Figure 4-1 shows a measuring setup for light vs. current characteristic under CW operation.

free transistor equivalent book 2sc

Abstract: HA13108 HL7801G HL7801E free thyristor equivalent book 2sc 2SC1707 HIGH POWER HIGH FREQUENCY CVD DIAMOND CHIP RESISTORS footprint HD44237 semi catalog pic micro weighing scale code example
Contextual Info: RELIABILITY 1. 1.1 R E L IA B IL IT Y R E L IA B IL IT Y C H A R A C T E R IS T IC S F O R S E M IC O N D U C T O R D E V IC E S Hitachi semiconductor devices are designed, manufactured and inspected so as to achieve a high level of reliability. Accordingly, system reliability can be improved by com­

PF0310A

Abstract: PF0144 Hitachi PF0030 HE8807CL Hitachi Industry Laser Diodes HL7806
Contextual Info: Reliability 1 Reliability 1.1 Reliability Data for CODEC LSIs T his sectio n d isc u sse s the re lia b ility d ata for Hitachi communication devices. Although current data is u sed , the rap id pace o f sem ico n d u cto r device development means new data may be added