44IBAGS Search Results

Contextual Info: HI TA CHI/ O PTOE LECTRONI CS SHE D • 44ibaGS 001207^ bñT « H I T 4 H L 8 3 1 8 E /G GaAIAsLD (-os Description The HL8318E/G are high-power 0.8 pm band GaAlAs laser diodes with a double heterojunction structure. Their internal circuit configuration is suited for operation on a single positive supply voltage. They are

T9040

Abstract: HE8807SG HE8813VG HE8815VG HL8312E HL8318E HL8318G Hitachi Scans-001
Contextual Info: HITACHI/ OPTOELECTRONICS SHE D • 44ibaGS 001207^ bñT « H I T 4 HL8318E/G GaAIAs LD (-os Description The HL8318E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. Their internal circuit configuration is suited for operation on a single positive supply voltage. They are