HAT1020R Search Results
HAT1020R Datasheets (9)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| HAT1020R | Hitachi Semiconductor | Silicon P Channel Power MOS FET High Speed Power Switching | Original | 57.9KB | 10 | ||
| HAT1020R | Hitachi Semiconductor | Power Mosfet 5th Generation | Original | 30.07KB | 6 | ||
| HAT1020R | Hitachi Semiconductor | Mosfet Guide | Original | 6.15MB | 1147 | ||
| HAT1020R | Renesas Technology | Silicon P Channel Power MOS FET High Speed Power Switching | Original | 84.92KB | 7 | ||
| HAT1020R | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
| HAT1020R-E | Renesas Technology | Transistor Mosfet P-CH 30V 5A 8SOP | Original | 84.91KB | 7 | ||
| HAT1020R-EL-E | Renesas Technology | Transistor Mosfet P-CH 30V 5A 8SOP T/R | Original | 84.91KB | 7 | ||
| HAT1020RJ | Renesas Technology | Transistor: Silicon P Channel Power MOS FET: High Speed Power Switching | Original | 55.2KB | 10 | ||
| HAT1020RJ-E | Renesas Technology | Transistor: Silicon P Channel Power MOS FET: High Speed Power Switching | Original | 55.2KB | 10 |
HAT1020R Price and Stock
Hitachi Ltd HAT1020R-ELTrans MOSFET P-CH Si 30V 5A 8-Pin SOP |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HAT1020R-EL | 7,500 |
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Get Quote | |||||||
Renesas Electronics Corporation HAT1020R-EL-E-Q |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HAT1020R-EL-E-Q | 2,410 |
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Get Quote | |||||||
Renesas Electronics Corporation HAT1020R-EL-E5A, 30V, 0.13OHM, P-CHANNEL, SI, POWER, MOSFET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HAT1020R-EL-E | 908 |
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Buy Now | |||||||
HAT1020R Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
HAT1020R
Abstract: HAT1020R-EL-E
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Original |
hat1020rrej03g1143-1000ade-208-435hprsp0008dd-d+1 | |
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Contextual Info: HAT1020R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-435 F Z 7th. Edition December. 1996 Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP–8 8 5 6 7 8 D D D D |
Original |
hat1020rade-208-43540x40x1ms-012aa | |
Hitachi DSA002779Contextual Info: HAT1020R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-435 G 8th. Edition Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline HAT1020R Absolute Maximum Ratings Ta = 25°C |
Original |
hat1020rade-208-435hitachi dsa002779 | |
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Contextual Info: HAT1020R Target Specification Silicon P Channel Power MOS FET 2nd. Edi ti on HITACHI May. 1 995 Preliminary Application S O P -8 High speed power switching Features • • • • Low on—resistance Capable of 4V gate drive Low drive current High density mounting |
OCR Scan |
hat1020rms-012aa | |
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Contextual Info: HAT1020R Silicon P Channel Power MOS FET High Speed Power Switching HITACHI Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP- 8 5 6 7 8 D D D D 1 ,2 ,3 Source 4 Gate 5, 6 , 7, 8 Drain |
OCR Scan |
hat1020rade-208-435ms-012aa | |
HAT1020RContextual Info: HAT1020R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-435H Z 9th. Edition Feb. 1999 Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP–8 8 5 6 7 8 D D D D 4 G 5 |
Original |
hat1020rade-208-435h | |
Hitachi DSA002751Contextual Info: HAT1020R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-435 G Z 8th. Edition June 1, 1997 Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP–8 8 5 6 7 8 D D D D 4 |
Original |
hat1020rade-208-435hitachi dsa002751 | |
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Contextual Info: HAT1020R Silicon P Channel Power MOS FET High Speed Power Switching HITACHI ADE-208-435 G 8th. Edition Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline S O P -8 5 6 7 8 % D D D D 1,2,3 Source |
OCR Scan |
hat1020rade-208-435 | |
Hitachi DSA001650Contextual Info: HAT1020R Silicon P-Channel Power MOS FET Preliminary November 1996 Application High speed power switching Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline HAT1020R Ordering Information Hitachi Code |
Original |
hat1020rms-012aahitachi dsa001650 | |
HAT1020R
Abstract: MS-012AA Hitachi DSA0073
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Original |
hat1020rade-208-43540x40x1ms-012aa+1 | |
Hitachi DSA002752Contextual Info: HAT1020R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-435 H Z 9th. Edition February 1999 Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP–8 8 5 6 7 8 D D D D |
Original |
hat1020rade-208-435hitachi dsa002752 | |
HAT1020R
Abstract: MS-012AA Hitachi DSA00309
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Original |
hat1020rade-208-435ms-012aahitachi dsa00309 | |
R1223N252A
Abstract: R1223N332H CD105 HAT1020R R1223N R1223N152H R1223N332A RB491D Si3443DV
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Original |
r1223nr1223n332b100mar1223n252a+7 | |
mosfet cross reference
Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
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Original |
mosfet cross referencepower mosfet cross reference guide2sk2146cross reference power mosfet+6 | |
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2sk 4207
Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
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Original |
d-856222sk 42072sk1762sk975 equivalent+7 | |
7054F
Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
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Original |
2sc45372sc4542sc45912sc4592+16 | |
TO220CFM
Abstract: 2SK2554 TO-220CFM to-3p(i)d series HAT1020R HAT1021R HAT1023R HAT1024R HAT1026R HAT2016R
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Original |
2sk2927o-2202sk29282sk2929+12 | |
IRF9310
Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
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Original |
device2176r14153cr108/dirf9310+9 | |
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Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid |
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SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
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Original |
5ke100a5ke100ca5ke10a5ke10ca+16 | |
IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
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Original |
ao4405ao4407ao4408ao4409+16 | |
HAT1020R
Abstract: HAT1020R-EL-E HAT1020RELE
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Original |
hat1020rhat1020r-el-ehat1020rele | |
1002ds
Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
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Original |
2sc5998c51392sc52472sc5907+16 | |
2SK975 equivalent
Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
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OCR Scan |
2sk11512sk11522sk18622sk1863+16 | |