GT25G1 Search Results
GT25G1 Datasheets (20)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| GT25G101 |
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N-channel IGBT, 400V, 25A | Original | 286.8KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT25G101 |
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IGBT | Original | 284.02KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT25G101 |
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Discrete IGBTs | Original | 539.84KB | 16 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT25G101 |
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Discrete IGBTs | Original | 586.27KB | 15 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT25G101 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 88.73KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT25G101 | Unknown | Catalog Scans - Shortform Datasheet | Scan | 53.63KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT25G101(SM) |
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N-channel iso-gate bipolar transistor (MOS technology) | Original | 200.82KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT25G101(SM) |
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N-channel IGBT, 400V, 25A | Original | 286.93KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT25G101SM |
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IGBT | Original | 300.51KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT25G101SM | Unknown | Catalog Scans - Shortform Datasheet | Scan | 53.63KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT25G101(SM) |
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TRANS IGBT CHIP N-CH 400V 25A 3(2-10S2C) | Scan | 185.08KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT25G101SM |
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N CHANNEL IGBT (STROBE FLASH APPLICATIONS) | Scan | 185.08KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT25G102 |
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TRANS IGBT CHIP N-CH 400V 25A 3(2-10S1C) | Original | 184.52KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT25G102 |
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INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT | Original | 286.31KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| GT25G102 |
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Discrete IGBTs | Original | 586.27KB | 15 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT25G102 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 88.73KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT25G102(SM) |
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N-channel iso-gate bipolar transistor (MOS technology) | Original | 200.77KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT25G102(SM) |
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N-channel IGBT, 400V, 25A | Original | 286.87KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT25G102SM |
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IGBT | Original | 286.87KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT25G102SM |
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N CHANNEL IGBT (STROBE FLASH APPLICATIONS) | Scan | 184.22KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
GT25G1 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: GT25G102 SM TOSHIBA TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR G T 2 5 G 1 2 SILICON N-CHANNEL IGBT ( S M ) U n it in mm STROBE FLASH APPLICATIO NS • High Input Impedance • • • Low Saturation Voltage : v CE(sat) = 8V (Max.) (Ic = 150A) Enhancem ent-Mode |
OCR Scan |
GT25G102 2-10S2C GT25G1Q2 | |
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Contextual Info: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C) |
Original |
GT25G101 10S2C | |
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Contextual Info: GT25G101 SM T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 2 5 G 1 01 ( S M ) STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : VCE(sat) = 8V (Max.) (IC = 170A) Enhancement-Mode 12V Gate Drive |
OCR Scan |
GT25G101 | |
GT25G101Contextual Info: GT25G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101 Unit in mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE sat =8V (Max.) (IC=170A) Enhancement−Mode 20V Gate Drive MAXIMUM RATINGS (Ta=25°C) |
Original |
GT25G101 2-10S1C GT25G101 | |
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Contextual Info: GT25G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101 Unit in mm STROBE FLASH APPLICATIONS z High Input Impedance : VCE sat =8V (Max.) (IC=170A) z Low Saturation Voltage z Enhancement−Mode z 20V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta=25°C) |
Original |
GT25G101 2-10S1C | |
GT25G102Contextual Info: GT25G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G102 Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance : VCE sat = 8V (Max.) (IC = 150A) l Low Saturation Voltage l Enhancement−Mode l 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C) |
Original |
GT25G102 2-10S1C GT25G102 | |
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Contextual Info: SILICON N CHANNEL MOS TYPE GT25G102 SM STROBE FLASH APPLICATIONS Unit in nn 10.3MAX . High Input Impedance 132, . Low Saturation Voltage : Vcg(sat)= &V(Max.) (Ic=150A) • Enhancement-Mode . 12V Gate Drive MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL |
OCR Scan |
GT25G102 | |
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Contextual Info: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS z High Input Impedance z Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) z Enhancement−Mode z 12V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) |
Original |
GT25G101 2-10S2C | |
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Contextual Info: GT25G102 T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 2 5 G 1 02 Unit in mm STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage Enhancement-Mode 12V Gate Drive : VC E sat = 8V (Max.) (IC = 150A) |
OCR Scan |
GT25G102 | |
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Contextual Info: GT25G102 SM T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25G1 0 2(S M) STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage Enhancement-Mode 12V Gate Drive : VC E (sat) = 8V (Max.) (IC = 150A) |
OCR Scan |
GT25G102 GT25G1 | |
gt25g101Contextual Info: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C) |
Original |
GT25G101 2-10S2C | |
GT25G101Contextual Info: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS z High Input Impedance z Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) z Enhancement−Mode z 12V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) |
Original |
GT25G101 2-10S2C | |
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Contextual Info: T O S H IB A GT25G102 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25G102(S M ) Unit in mm STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : V(j e (5at) = 8V (Max.) (Iq = 150A) Enhancement-Mode |
OCR Scan |
GT25G102 2-10S2C 2T25G102 | |
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Contextual Info: GT25G102 SM T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25G1 0 2(S M) STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage Enhancement-Mode 12V Gate Drive : VC E (Sat) = 8V (Max.) (IC = 150A) |
OCR Scan |
GT25G102 GT25G1 | |
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Contextual Info: GT25G101 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASH APPLICATIONS SILICON N-CHANNEL IGBT G T 2 5 G 1 01 Unit in mm High Input Impedance Low Saturation Voltage : V qe sat = 8V (Max.) (Iq = 170A) Enhancement-Mode 20V Gate Drive MAXIMUM RATINGS (Ta = 25°C) |
OCR Scan |
GT25G101 VCM-330V | |
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Contextual Info: TOSHIBA GT25G102 TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N-CHANNEL IGBT GT2 5 G 102 U nit in mm STROBE FLASH APPLICATIONS • • • • H igh Input Impedance Low Saturation Voltage : VQ E say = 8V (Max. (Ic = 150A) Enhancement-Mode 12V Gate Drive |
OCR Scan |
GT25G102 2-10S1C | |
G50Q2YS40
Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
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OCR Scan |
GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q GT15G101 GT15J101 GT15J102 GT15J103 GT15Q101 G50Q2YS40 MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js | |
GT25G102Contextual Info: TOSHIBA GT25G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 2 5 G 1 02 Unit in mm STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : VCE sat = 8V (Max.) (IC = 150A) Enhancement-Mode 12V Gate Drive |
OCR Scan |
GT25G102 GT25G102 | |
transistor SM 200
Abstract: 12V1 GT25G102 12V11 GT25
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OCR Scan |
GT25G102 GT25G10 transistor SM 200 12V1 12V11 GT25 | |
GT25G101Contextual Info: GT25G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101 Unit in mm STROBE FLASH APPLICATIONS z High Input Impedance z Low Saturation Voltage : VCE sat =8V (Max.) (IC=170A) z Enhancement−Mode z 20V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta=25°C) |
Original |
GT25G101 2-10S1C GT25G101 | |
lr4080
Abstract: GT25
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OCR Scan |
GT25G102 GT25G10 2-10S2C lr4080 GT25 | |
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Contextual Info: TOSHIBA GT25G101 T O S H IB A IN S U L A T E D G ATE B IP O LA R T R AN SISTO R SILICO N N -C H A N N E L IGBT Unit in mm STROBE FLASH A P P L IC A T IO N S 1 0 .3 M A X • • • • High Input Impedance Low Saturation Voltage : V j e (5at = 8V (Max.) (Iq = 170A) |
OCR Scan |
GT25G101 | |
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Contextual Info: SILICON N CHANNEL MOS TYPE GT25G101 STROBE FLASH APPLICATIONS Unit in ran 10.3MAX . High Input Impedance 1.32 5Ï IB . Low Saturation Voltage : VcE sat *8V(riax.) (Ic=170A) . Enhancement-Mode . 20V Gate Drive 1.6 MAX 0.76 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC |
OCR Scan |
GT25G101 2-10S1C | |
GT25G102Contextual Info: GT25G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G102 Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE sat = 8V (Max.) (IC = 150A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C) |
Original |
GT25G102 2-10S1C GT25G102 | |