GT25 Search Results

Toshiba transistor Ic 100A

Contextual Info: TOSHIBA TENTATIVE GT25Q301 TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N CHANNEL IGBT GT25Q301 HIGH PO W E R SWITCHING APPLICATIONS U n it in mm M OTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode H ig h Speed : tf= 0.40^s M ax. Lo w Satu ratio n Voltage : V c e

Contextual Info: GT25G102 SM TOSHIBA TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR G T 2 5 G 1 2 SILICON N-CHANNEL IGBT ( S M ) U n it in mm STROBE FLASH APPLICATIO NS • High Input Impedance • • • Low Saturation Voltage : v CE(sat) = 8V (Max.) (Ic = 150A) Enhancem ent-Mode

Contextual Info: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: TOSHIBA GT25J101 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N -CH ANN EL IGBT G T 2 5 J 1 01 Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS • • • • 1 5 .9 M A X High Input Impedance High Speed : tf=0.35/*s Max.

TOSHIBA IGBT DATA BOOK

Abstract: GT25Q102 GT25Q301
Contextual Info: GT25Q102 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT25Q102 High Power Switching Applications • The 3rd Generation • Enhancement-Mode • High Speed: tf = 0.32 µs max • Low Saturation Voltage: VCE (sat) = 2.7 V (max)

Contextual Info: GT25G101 SM T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 2 5 G 1 01 ( S M ) STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : VCE(sat) = 8V (Max.) (IC = 170A) Enhancement-Mode 12V Gate Drive

Contextual Info: GT25C08 GT25C08 SPI 8K Bits Serial EEPROM Copyright 2013 Giantec Semiconductor Inc. Giantec . All rights reserved. Giantec reserves the right to make changes to this specification and its products at any time without notice. Giantec products are not designed, intended, authorized or warranted for use as components in systems or equipment intended for critical medical or surgical equipment,

TRANSISTOR BJ 033

Abstract: GT25Q301
Contextual Info: T O S H IB A GT25Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT25Q301 Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf = 0.32 jus Max. Low Saturation Voltage : V qe (sa^) = 2.7 V (Max.)

GT25G101

Contextual Info: GT25G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101 Unit in mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE sat =8V (Max.) (IC=170A) Enhancement−Mode 20V Gate Drive MAXIMUM RATINGS (Ta=25°C)

GT25H101

Abstract: GT25H Opto Speed SA
Contextual Info: TOSHIBA {DIS CR ETE/O PT O! 90D 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA D E_| ciO,:17BSD D D l b l ñ ? TD SEMICONDUCTOR 16187 1 D T - 3 3 ' ^ 3 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT25H101 TECHNICAL DATA SILICON N-CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS.

Contextual Info: GT25G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101 Unit in mm STROBE FLASH APPLICATIONS z High Input Impedance : VCE sat =8V (Max.) (IC=170A) z Low Saturation Voltage z Enhancement−Mode z 20V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

GT25G102

Contextual Info: GT25G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G102 Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance : VCE sat = 8V (Max.) (IC = 150A) l Low Saturation Voltage l Enhancement−Mode l 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)

GT2531

Contextual Info: Pb Free Plating Product ISSUED DATE :2006/01/23 REVISED DATE : N-CH BVDSS 16V N-CH RDS ON 58m N-CH ID 3.5A P-CH BVDSS -16V N-CH RDS(ON) 125m N-CH ID -2.5A GT2531 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GT2531 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely

GT25Q101

Contextual Info: GT25Q101 HIGH POWER SWITCHING APPLICATIONS. Unit in MOTOR CONTROL APPLICATIONS. #3.3±02 20 5MAX . High Input Impedance . High Speed tf-0.5 is(Max. . Low Saturation Voltage VcE(sat)=4.0V(Max.) <=f; . Enhancement-Mode 2.5 30 + 2.5 1.0-0.25 5.4 5±0.1 5 MAXIMUM RATINGS (Ta-25°C)

Contextual Info: T O S H IB A GT25Q101 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N -CH ANN EL IGBT G T 2 5 Q 1 01 Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS • High Input Impedance • High Speed • Low Saturation Voltage : VGE sat = 4-0V (Max.)

Contextual Info: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS z High Input Impedance z Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) z Enhancement−Mode z 12V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: GT250 grid-tie solar inverters High availability from a provider you can trust Easy to install and operate, the Schneider ElectricTM GT250 grid tie inverters automate startup, shut down and fault detection scenarios. They incorporate advanced Maximum Power Point Tracking technology to maximize the

IGBT GT25q101

Abstract: GT25q101 transistor gt25q101
Contextual Info: T O S H IB A GT25Q101 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N -CH ANN EL IGBT G T 2 5 Q 1 01 Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS 20.5MAX. • High Input Impedance • High Speed • Low Saturation Voltage : V q e

TRANSISTOR BJ 033

Abstract: GT25Q301
Contextual Info: TO SH IBA GT25Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT25Q301 Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf = 0.32 jus Max. Low Saturation Voltage : V qe (sa^) = 2.7 V (Max.)

giantec

Contextual Info: GT25C128 Advanced GT25C128 SPI 128K Bits Serial EEPROM Copyright 2011 Giantec Semiconductor Inc. Giantec . All rights reserved. Giantec reserves the right to make changes to this specification and its products at any time without notice. Giantec products are not designed, intended, authorized or warranted for use as components in systems or equipment intended for critical medical or surgical equipment,

Contextual Info: GT25C256 GT25C256 SPI 256K Bits Serial EEPROM Copyright 2013 Giantec Semiconductor Inc. Giantec . All rights reserved. Giantec reserves the right to make changes to this specification and its products at any time without notice. Giantec products are not designed, intended, authorized or warranted for use as components in systems or equipment intended for critical medical or surgical equipment,

Contextual Info: GT25G102 T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 2 5 G 1 02 Unit in mm STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage Enhancement-Mode 12V Gate Drive : VC E sat = 8V (Max.) (IC = 150A)

Contextual Info: GT25G102 SM T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25G1 0 2(S M) STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage Enhancement-Mode 12V Gate Drive : VC E (sat) = 8V (Max.) (IC = 150A)

Contextual Info: GT25J102 TO SHIBA TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 2 5 J 1 02 HIGH POWER SWITCHING APPLICATIONS U nit in mm MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf=U.35//s Max. • Low Saturation Voltage