FHX04LG Search Results

FHX04LG Datasheets (4)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FHX04LG		Eudyna Devices	TRANS JFET 3.5V 4LG	Original	PDF	91.51KB	5
FHX04LG		Fujitsu	FET, P Channel, ID 0.06 A	Original	PDF	114.96KB	5
FHX04LG		Unknown	High Frequency Device Data Book (Japanese)	Scan	PDF	53.3KB	1
FHX04LG-E1		Fujitsu	FET: P Channel: ID 0.06 A	Original	PDF	114.97KB	5

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FUJITSU Limited


FUJITSU Limited FHX04LG
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	FHX04LG		61			1 $84.00 10 $84.00 100 $67.20 1000 $67.20 10000 $67.20	Buy Now
FUJITSU Limited FHX04LGT Transistor
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	FHX04LGT		1,063			1 - 10 - 100 - 1000 - 10000 -	Get Quote

FHX04LG Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
fujitsu hemt Contextual Info: FHX04LG/LP, 05LG/LP, 06LG/LP Super Low Noise HEMT FEATURES • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) • High Associated Gain: 10.5dB (Typ.)@f=12GHz • Lg ² 0.25µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package	Original	fhx04lg/lp 05lg/lp 06lg/lp 12ghz +5fhx04 fhx05lg/lp fhx06lg/lp 2-18ghz fujitsu hemt	PDF
FHX04LG Abstract: FHX04 FHX05LG FHX06LG TVRO 4232 gm fujitsu hemt FHX*LG Contextual Info: FHX04LG, 05LG, 06LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) • High Associated Gain: 10.5dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package	Original	fhx04lg 12ghz fhx04 fhx05lg +7fhx06lg 2-18ghz fcsi0598m200 tvro 4232 gm fujitsu hemt fhx*lg	PDF
FHX04LG Abstract: FHX04 FHX05LG FHX06LG low noise hemt 2-18G 12GAS Contextual Info: FHX04LG, 05LG, 06LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) • High Associated Gain: 10.5dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package	Original	fhx04lg 12ghz fhx04 fhx05lg +5fhx06lg 2-18ghz low noise hemt 2-18g 12gas	PDF
Contextual Info: FHX04LG, 05LG, 06LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) • High Associated Gain: 10.5dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package	Original	fhx04lg 12ghz fhx04 fhx05lg +2fhx06lg 2-18ghz	PDF
FHX04 Abstract: FHX04LG FHX05LG FHX06LG Eudyna Packaging Contextual Info: FHX04LG, 05LG, 06LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) • High Associated Gain: 10.5dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package	Original	fhx04lg 12ghz fhx04 fhx05lg +3fhx06lg 2-18ghz eudyna packaging	PDF
fujitsu hemt Abstract: FHX04 FHX04LG 4232 gm CQ 527 Contextual Info: FHX04LG/LP, 05LG/LP, 06LG/LP Super Low Noise HEMT FEATURES • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) • High Associated Gain: 10.5dB (Typ.)@f=12GHz • Lg s 0.25\|iim, Wg = 200\|iim • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package	OCR Scan	fhx04lg/lp 05lg/lp 06lg/lp 12ghz +8fhx04 fhx05lg/lp fhx06lg/lp 2-18ghz fujitsu hemt fhx04lg 4232 gm cq 527	PDF
FSX52WF Abstract: GaAs HEMTs X band FSX017LG FHX05LG fhx06lg FSU01LG Contextual Info: LOW NOISE HEMTs Electrical Characteristics Ta = 25°C NF TYP. (dB) Gas TYP. (dB) f (GHz) VDS (V) •os (mA) Package Type Frequency Band FHC40LG* 0.30 15.5 4 2 10 LG/LP C FHX13LG* 0.45 12.5 12 2 10 LG/LP FHX14LG* 0.60 12.5 12 2 10 LG/LP FHX04LG* 0.75 10.5	OCR Scan	fhc40lg fhx13lg fhx14lg fhx04lg +8fhx05lg fhx06lg fhx35lg fhr02fh fsx52wf gaas hemts x band fsx017lg fsu01lg	PDF
Contextual Info: , FHX04LG 05LG, 06LG Low Noise H E M T ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Condition Symbol Rating Unit Drain-Source Voltage Vd S 3.5 V Gate-Source Voltage VGS -3.0 V Total Power Dissipation Ptot 180 mW Storage Temperature Tstg -65 to +175	OCR Scan	fhx04lg 4000q	PDF
MRF947T1 equivalent Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L Contextual Info: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi	Original	2sa1977 2sa1978 2sc2351 2sc3355 +162sc3357 2sc3545 2sc3583 2sc3585 2sc4093 2sc4094 mrf947t1 equivalent mrf947t1 equivalent transistor nj1006 bfp320 fll120mk fll101me mgf4919g fujitsu gaas fet fhx76lp hpma-2086 mmbr521l	PDF
FMC141401-02 Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1 Contextual Info: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking	OCR Scan	fmc141401-02 fujitsu gaas marking code fujitsu k022 fll300-2 +6fll55 fsx52wf fujitsu l101 fujitsu x51 fll200-2 fll300-1	PDF
FSX52WF Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK Contextual Info: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of	OCR Scan	flx202mh-12 flk202mh-14 fsx52wf fujitsu "application notes +8fsx51wf nf037 fmc141401-02 fll101 fll171 fmc1414p1-02 fll55 fll120mk	PDF