FDP4030L Search Results

Contextual Info: F A IR C H IL D S E M IC O N D U C T O R March 1998 m FDP4030L / FDB4030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features T h ese N -C hannel en hance m en t m ode 1 po w e r field effect transistors are produced using Fairchild's proprietary, high

FDB4030L

Abstract: FDP4030L
Contextual Info: March 1998 FDP4030L / FDB4030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features 20 A, 30 V. RDS ON = 0.035 Ω @ VGS=10 V RDS(ON) = 0.055 Ω @ VGS=4.5V. These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high

m 9835

Abstract: CBVK741B019 EO70 F63TNR FDB4030L FDP4030L FDP7060 L86Z NDP4060L 9852
Contextual Info: March 1998 FDP4030L / FDB4030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features 20 A, 30 V. RDS ON = 0.035 Ω @ VGS=10 V RDS(ON) = 0.055 Ω @ VGS=4.5V. These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,

Contextual Info: March 1998 RAIRCHII-D M ICDNDUCTO R tm FDP4030L / FDB4030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high

FDB4030L

Abstract: FDP4030L
Contextual Info: March 1998 FDP4030L / FDB4030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features 20 A, 30 V. RDS ON = 0.035 Ω @ VGS=10 V RDS(ON) = 0.055 Ω @ VGS=4.5V. These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,

Contextual Info: March 1998 F A IR C H IL D SEM IC ONDUCTO R tm FDP4030L / FDB4030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high

FDB4030L

Abstract: FDP4030L
Contextual Info: March 1998 FAIRCHILD S E M I C O N D U C T O R TM FDP4030L / FDB4030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high

mosfet cross reference

Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
Contextual Info: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

FQP630

Abstract: FQP27N25 FQP55N10 IRF630B FQP630 equivalent SFP9634 irf640b FDP6035L IRF620B SSP7N60A
Contextual Info: Discrete MOSFET TO-220 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-220 N-Channel ISL9N302AP3 30 Single 0.0025 0.0033 - - 110 75 345 FDP8030L 30 Single 0.0035 0.0045

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

SSP6N60A

Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
Contextual Info: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

ss8050 d 331

Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
Contextual Info: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2