FA38SA50 Search Results
FA38SA50 Datasheets (5)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| FA38SA50 | International Rectifier | HEXFET Power MOSFET | Original | 124.68KB | 8 | ||
| FA38SA50LC | International Rectifier | HEXFET Power MOSFET | Original | 124.7KB | 8 | ||
| FA38SA50LC | International Rectifier | HEXFET Power MOSFET | Original | 177.99KB | 8 | ||
| FA38SA50LC | International Rectifier | FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 500V 38A SOT-227 | Original | 8 | |||
| FA38SA50LC | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 |
FA38SA50 Price and Stock
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FA38SA50LC | 35 |
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FA38SA50 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Not recommended for new designs, use VS-FA40SA50LC VS-FA38SA50LCP www.vishay.com Vishay Semiconductors Power MOSFET, 38 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated |
Original |
vs-fa40sa50lcvs-fa38sa50lcpot-227e78996+3 | |
FA38SA50LCContextual Info: PD - 91615B FA38SA50LC HEXFET Power MOSFET l l l l l l l l Fully Isolated Package Easy to Use and Parallel Low On-Resistance Dynamic dv/dt Rating Fully Avalanche Rated Simple Drive Requirements Low Drain to Case Capacitance Low Internal Inductance D VDSS = 500V |
Original |
91615bfa38sa50lcot-227acc10 | |
5566-4
Abstract: max3824
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OCR Scan |
fa38sa50ot-2275566-4max3824 | |
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Contextual Info: FA38SA50LCP Vishay Semiconductors Power MOSFET, 38 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements • Low drain to case capacitance |
Original |
fa38sa50lcpot-2272002/95/ec2011/65/eu+1 | |
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Contextual Info: FA38SA50LCP Vishay Semiconductors Power MOSFET, 38 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements • Low drain to case capacitance |
Original |
fa38sa50lcpot-2272002/95/ec18-jul-08 | |
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Contextual Info: Not Available for New Designs, Use VS-FA40SA50LC VS-FA38SA50LCP www.vishay.com Vishay Semiconductors Power MOSFET, 38 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated |
Original |
vs-fa40sa50lcvs-fa38sa50lcpot-227e78996+3 | |
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Contextual Info: '~i| p • m PD 9.1615 International IO R Rectifier FA38SA50 PRELIMINARY HEXFET Power MOSFET Fully Isolated Package Easy to Use and Parallel Low On-Resistance Dynamic dv/dt Rating Fully Avalanche Rated Simple Drive Requirements Low Drain to Case Capacitance |
OCR Scan |
fa38sa50t-227 | |
FA38SA50LCPContextual Info: FA38SA50LCP Vishay High Power Products Power MOSFET, 38 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated • Simple drive requirements SOT-227 • Low drain to case capacitance |
Original |
fa38sa50lcpot-2272002/95/ec18-jul-08 | |
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Contextual Info: P D -9 .1 6 1 5 A International IÖR Rectifier FA38SA50LC HEXFET Power M O S F E T • Fully Isolated Package • Easy to Use and Parallel • Low On-Resistance • Dynamic dv/dt Rating • Fully Avalanche Rated • Simple Drive Requirements • Low Drain to Case Capacitance |
OCR Scan |
fa38sa50lc4ass452 | |
FA38SA50LCPContextual Info: FA38SA50LCP Vishay Semiconductors Power MOSFET, 38 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements • Low drain to case capacitance |
Original |
fa38sa50lcpot-2272002/95/ec11-mar-11 | |
400V INDUSTRIAL voltage regulator
Abstract: FA38SA50LC
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Original |
fa38sa50lcot-227400v industrial voltage regulator | |
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Contextual Info: FA38SA50LCP www.vishay.com Vishay Semiconductors Power MOSFET, 38 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated • Simple drive requirements SOT-227 • Low drain to case capacitance |
Original |
fa38sa50lcpot-227e789962002/95/ec+3 | |
FA38SA50Contextual Info: PD 9.1615 FA38SA50 PRELIMINARY HEXFET Power MOSFET l l l l l l l l Fully Isolated Package Easy to Use and Parallel Low On-Resistance Dynamic dv/dt Rating Fully Avalanche Rated Simple Drive Requirements Low Drain to Case Capacitance Low Internal Inductance |
Original |
fa38sa50ot-227 | |
FA38SA50LCContextual Info: PD - 91615B FA38SA50LC HEXFET Power MOSFET l l l l l l l l Fully Isolated Package Easy to Use and Parallel Low On-Resistance Dynamic dv/dt Rating Fully Avalanche Rated Simple Drive Requirements Low Drain to Case Capacitance Low Internal Inductance D VDSS = 500V |
Original |
91615bfa38sa50lcot-22712-mar-07 | |
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PD916Contextual Info: PD-9.1615A International TOR Rectifier FA38SA50LC HEXFET Power MOSFET • Fully Isolated Package • Easy to Use and Parallel • Low On-Resistance • Dynamic dv/dt Rating • Fully Avalanche Rated • Simple Drive Requirements • Low Drain to Case Capacitance |
OCR Scan |
pd916 | |
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Contextual Info: PD - 91615B FA38SA50LC HEXFET Power MOSFET l l l l l l l l Fully Isolated Package Easy to Use and Parallel Low On-Resistance Dynamic dv/dt Rating Fully Avalanche Rated Simple Drive Requirements Low Drain to Case Capacitance Low Internal Inductance D VDSS = 500V |
Original |
91615bfa38sa50lcot-22708-mar-07 | |
"SOT-227" dimensionsContextual Info: FA38SA50LCP Vishay Semiconductors Power MOSFET, 38 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements • Low drain to case capacitance |
Original |
fa38sa50lcpot-2272002/95/ec11-mar-11+1 | |
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Contextual Info: FA38SA50LCP Vishay High Power Products HEXFET Power MOSFET, 38 A FEATURES • Fully isolated package • Easy to use and parallel RoHS • Low on-resistance COMPLIANT • Dynamic dV/dt rating • Fully avalanche rated • Simple drive requirements SOT-227 |
Original |
fa38sa50lcpot-22718-jul-08 | |
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Contextual Info: FA38SA50LC HEXFET SOT-227 Package Details 38 . 3 0 1 .5 0 8 37 . 8 0 ( 1 .4 8 8 ) 4 .4 0 (. 1 73 ) 4 .2 0 (. 1 65 ) C H A M FE R 2 .0 0 ( .0 7 9 ) X 4 5 7 L E A D A S S IG M E N T S E -A 4 C S 3 G E IG B T 2 5 .7 0 ( 1 .0 1 2 ) 2 5 .2 0 ( .9 9 2 ) 6 .2 5 ( .2 4 6 ) |
Original |
fa38sa50lcot-227 | |
IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
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Original |
ao4405ao4407ao4408ao4409+16 | |
IRU1239SC
Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
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Original |
100mt160papbf100mt160pa100mt160pbpbfiru1239sc+9 | |
HEXFET
Abstract: GA200TD120U GA500TD60U GA100TS60U
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Original |
ot-227ga600gd25sga125ts120uga100ts120u+9 | |
IC 50061
Abstract: FA57SA50LC 50071 GA400TD25S FB180SA10 GA600GD25S CHOPPER GA200TD120U GA200SA60U GA200NS61U
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Original |
ot-227ga600gd25sga400td25sga500td60u+13 | |
YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
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Original |
2n70002n70022sj3772sj378+16 | |