PD916 Search Results

IRGNIN075M12

Abstract: diode C522 C524 DIODE
Contextual Info: PD9164 IRGNIN075M12 International S Rectifier "CHOPPER HIGH SIDE SWITCH' IGBTINT-A-PAK Low conduction loss IGBT High Side Switch -=3 VCE= 1200V lc = 75A 50-• Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated

AN-994

Abstract: EIA-541 IRG4RC10SD inverter circuit 200v to 100v
Contextual Info: PD-91678B IRG4RC10SD Standard Speed CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Extremely low voltage drop 1.1V typ @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4

IRF7521D1

Abstract: 9164
Contextual Info: PD-91646C IRF7521D1 PRELIMINARY FETKY MOSFET / Schottky Diode ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint A A S G 1 8 K 2 7 K 3 6 4 5 VDSS = 20V

J 420 G

Contextual Info: International IGR Rectifier pd-91654 IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchm ark switching losses improve efficiency of all power supply topologies

AN-994

Abstract: IRG4RC10SD
Contextual Info: PD-91678 IRG4RC10SD PRELIMINARY Standard Speed CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.1V typ @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4

RD2001

Abstract: 5M MARKING CODE SCHOTTKY DIODE J332 CL65B
Contextual Info: PD-91649C International I«R Rectifier IRF7526D1 FETKY MOSFET & Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • P-Channel HEXFET • Low V F Schottky Rectifier • Generation 5 Technology • Micro8™ Footprint V dss = "30V

Contextual Info: PD-91678B IRG4RC10SD Standard Speed CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.1V typ @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4

Contextual Info: International I R Rectifier pd-916si IRG4PSC71U INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features • U ltra F a s t sw itching s p e e d o ptim ized for operating V freq u en cies 8 to 4 0 k H z in hard sw itching, 2 0 0 k H z ces = 600V in reso nan t m ode soft switching

st178

Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment