CY62146V Search Results

Contextual Info: A D V A N C E D CY62146V MoBL TM IN F O R M A T IO N 2 5 6 K x 16 Static RAM disabled BHE, BLE HIGH , or during a write operation (CE LOW, and WE LOW). Features • Low voltage range: -1 .8 V - 3 .3 V • • • • • Ultra low active, standby power Easy memory expansion with CE and OE features

CY62146VLL-70ZI

Abstract: CY62146V
Contextual Info: 1*CY62146V MoBL CY62146V MoBL™ 256K x 16 Static RAM Features • Low voltage range: — CY62146V: 2.7V–3.6V • Ultra-low active, standby power • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected

CY62146V18

Contextual Info: CY62146V18 MoBL2 256K x 16 Static RAM Features • Low voltage range: — CY62146V18: 1.75V–1.95V • Ultra-low active, standby power • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected

Contextual Info: V CYPRESS ADVANCED INFORMATION CY62146V MoBL T M 256K x 16 Static RAM disabled B H E , BLE HIG H , o r during a w rite op era tion (CE LOW, and W E LOW ). Features • Low vo ltag e range: -1 .8 V -3 .6 V • U ltra-lo w active, s ta n d b y p o w er • Easy m e m o ry e x p a n sio n w ith C E and O E fe a tu re s

CY62146V

Abstract: CY62146VLL
Contextual Info: CY62146V MoBL 4M 256K x 16 Static RAM Features • • • • • • • Wide voltage range: 2.7V–3.6V Ultra-low active, standby power Easy memory expansion with CE and OE features TTL-compatible inputs and outputs Automatic power-down when deselected

CY62146V

Abstract: CY62146VLL
Contextual Info: CY62146V MoBL 4M 256K x 16 Static RAM Features • • • • • • • Wide voltage range: 2.7V–3.6V Ultra-low active, standby power Easy memory expansion with CE and OE features TTL-compatible inputs and outputs Automatic power-down when deselected

CY62146VLL-70BAI

Abstract: CY62146V CY62146VLL-70ZI
Contextual Info: 46V CY62146V MoBL 256K x 16 Static RAM Features • Low voltage range: — CY62146V: 2.7V–3.6V • Ultra-low active, standby power • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected

CY62146V

Abstract: CY62146V18 ZNS25
Contextual Info: CY62146V MoBL CY62146V18 MoBL2™ 256K x 16 Static RAM put/output pins I/O0 through I/O 15 are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW).

Contextual Info: F/ CYPRESS ADVANCED INFORMATION 2 5 6 K x 16 Static RAM disabled BHE, BLE HIGH , or during a write operation (CE LOW, and WE LOW). Features • Low voltage range: - 1 . 8 V - 3 .6 V • • • • • CY62146V MoBL T M Ultra-low active, standby power Easy mem ory expansion with CE and OE features

CY62146VLL-70BAI

Abstract: A14C A15C CY62146V CY62146VL-70BAI
Contextual Info: V CYPRESS ADVANCED INFORMATION 256K x 16 Static RAM disabled BHE, BLE HIGH , or during a write operation (CE LOW, and WE LOW). Features • Low voltage range: - 1 . 8 V - 3 .6 V • • • • • CY62146V MoBL T M Ultra-low active, standby power Easy memory expansion with CE and OE features

CY62146V

Abstract: CY62146VLL-70ZI
Contextual Info: CY62146V MoBL 256K x 16 Static RAM Features • Low voltage range: — CY62146V: 2.7V–3.6V • Ultra-low active, standby power • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected

CY62146V

Abstract: CY62146V18
Contextual Info: CY62146V MoBL CY62146V18 MoBL2™ V CYPRESS 256K x 16 Static RAM put/output pins I/Oq through I/0 1 5 are placed in a high-impedance state when: deselected (CE HIGH), outputs are dis­ abled (OE HIGH), BHE and BLE _are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW).

CY62146V

Abstract: CY62146V18 CY62146VLL-70BAI
Contextual Info: CY62146V MoBL CY62146V18 MoBL2™ 256K x 16 Static RAM Features put/output pins I/O0 through I/O 15 are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW).

Contextual Info: CY62146CV18 MoBL2 PRELIMINARY 256K x 16 Static RAM Features • Low voltage range: — CY62146CV18: 1.65V–1.95V • Pin Compatible with CY62146V18/BV18 • Ultra-low active, standby power • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs

vhdl code for dice game

Abstract: Video Proc 3.3V 0.07A 64-Pin PQFP ez811 GRAPHICAL LCD interfaced with psoc 5 cypress ez-usb AN2131QC CYM9239 vhdl code PN 250 code generator CY3649 cy7c63723 Keyboard and Optical mouse program CY7C9689 ethernet
Contextual Info: Product Selector Guide Communications Products Description Pins Part Number Freq. Range Mbps ICC (mA) Packages* 3.3V SONET/SDH PMD Transceiver 2.5V SiGe Low Power SONET/SDH Transceiver SONET/SDH Transceiver w/ 100K Logic 2.5 G-Link w/ 100K Logic OC-48 Packet Over SONET (POS) Framer

TSOP44 Package

Abstract: HY628400ALLG-70 HY62WT08081E-DG70I HY628100BLLG-70 SO28 package datasheet cy62127bvll-70bai so32 HY628400ALLT2-70 M68AF511AL55MC1 K6T1008C2E-GB70
Contextual Info: Static Random Access Memories Asynchronous low power and synchronous fast SRAM solutions www.st.com/sram Selection Guide with Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions Static Random Access Memories STMicroelectronics has decided to target different growing market segments

TC554161A

Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
Contextual Info: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA

HM628100

Abstract: HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006
Contextual Info: BSI Low Power SRAM Cross Reference Table Nov-30-2008 Density Configuration Part No. Speed ns Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax Voltage (V) Samsung Cypress 2.4~5.5 x8 BS62LV256 70 0.05uA 0.1uA 0.4uA 1mA 20mA 35mA BS62LV1027 55/70 0.1uA

CY62146CV30

Abstract: CY62146V
Contextual Info: CY62146CV30 MoBL 256K x 16 Static RAM Features reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by 99% when deselected CE HIGH . The input/output pins (I/O0 – I/O15) are placed in a

8355F

Abstract: 130C JESD22
Contextual Info: Cypress Semiconductor Package Qualification Report QTP# 99331 VERSION 2.0 December, 2000 48 Lead Fine Pitch Ball Grid Array FBGA 7mm x 8.5mm ASE Taiwan CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Director (408) 432-7069 Kim-Ngan Nguyen

M5M418165

Abstract: NEC 2581 CSP-48 AS7C33256PFS18A tc5588 KM6865 FLASH CROSS 256K16 TR-81090 la 4620
Contextual Info: Product Guide SRAM 64K 256K 512K All densities in bits 1M 2M 1.65V-3.6V Low-power Asynchronous IntelliwattT M 32Kx8 5V Fast Asynchronous 4M 8M 16M 512K×8 1M×8 2M×8 256K×16 3.3V Fast Asynchronous 8K×8 32K×8 32K×16 32K×16 128K×8 512K×8 64K×16

TC55VEM416AXBN

Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN
Contextual Info: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA

CYPRESS SAMSUNG CROSS REFERENCE

Abstract: TC55V400-70 toshiba 32k*8 sram TC55257DI-L-70 tbb1458b BS62LV1024-70 BS62UV1024-15 BS62UV256-15 K6F8008S2M BS62LV4005-70
Contextual Info: 7700 Irvine Center Dr. STE: 420 Irvine, CA 92618 Contact: Lena Patel email: lena@brilliancesemi.com Phone Number: 949-789-6274 Fax Number: 949-789-6277 Website: www.brilliancesemi.com SRAM CROSS REFERENCE Memory Size Operating Voltage SAMSUNG 1.2 ~ 2.4V 1.8 ~ 3.6V

CY62146CV18

Contextual Info: CY62146CV18 MoBL2 256K x 16 Static RAM Features an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected CE HIGH . The input/output pins (I/O0 through I/O15) are