CXT4033 Search Results

Contextual Info: Central Semiconductor Corp. CXT4033 PNP SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR CXT4033 type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general

Contextual Info: Central" CXT4033 Sem iconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEM ICONDUCTO R CXT4033 type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current

CXT4033

Contextual Info: Central CXT4033 TM Semiconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT4033 type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current

Contextual Info: CXT4033 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT4033 type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose

CXT4033

Contextual Info: Central CXT4033 TM Semiconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT4033 type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current

cjjj

Abstract: cxt4
Contextual Info: Central Sem ico n du cto r Corp. CXT4033 PNP SILICON TRANSISTOR DESCRIPTION The C E N T R A L S E M IC O N D U C T O R CXT4033 type is an PN P silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general

Contextual Info: Central Smnlconductor Corp. CXT4033 PNP SILICON TRANSISTOR DESCRIPTION The C EN TR A L S E M IC O N D U C T O R CXT4033 type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general

CXT4033

Contextual Info: CXT4033 SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT4033 type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose

CXT4033

Contextual Info: Central CXT4033 TM Semiconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT4033 type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current

SOT89 MARKING CODE

Abstract: marking nfe ON
Contextual Info: Central" CXT4033 Semiconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT4033 type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current

Contextual Info: Central’ Semiconductor Corp. CXT4033 PNP SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR CXT4033 type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general

CXT4033

Contextual Info: Central C XT4033 Semicondui PNP SILICON TRANSISTOR DESCRIPTION The C EN TR AL SE M IC O N D U C T O R CXT4033 type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general

SMD Code 12W SOT23

Abstract: 12W SMD MARKING CODE smd 2n2907a 2n2222a SOT223 2N2222A smd 6E SMD CODE MPSA42 SMD SMD MARKING CODE 12w smd npn darlington SMD CODE SOT89 lc
Contextual Info: SMD Transistors SOT-89 Case 1.2W TYPE NO. CBCX68 CBCX69 CXT2222A CXT2907A CXT3019 CXT3904 CXT3906 CXT4033 CXT5401 CXT5551 CXTA14 CXTA42 CXTA64 CXTA92 DESCRIPTION NPN HIGH CURRENT PNP HIGH CURRENT NPN AMPL'SWITCH PNP AMPt/SWITCH NPN HIGH CURRENT NPN AM PL/SWITCH

transistor 2N4033

Abstract: 2N4033 CMPT4033 CP705 CXT4033 CZT4033
Contextual Info: PROCESS CP705 Small Signal Transistor PNP - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 31 x 31 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.9 x 11.8 MILS Emitter Bonding Pad Area 6.5 x 13.8 MILS Top Side Metalization

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

CMPZ4124

Abstract: CMZ5930B CMZ5945B CMZ5947B Transistor 1602c BC327/transistor bc547 bk 045 CMPZ4618 CMPZ4614 CMZ5948B CMZ5936B
Contextual Info: Small Signal Transistors U.S Specifications Preferred Series SOT-23 Case, 350mW (Continued on next page) b v Ce o b v ebo •SVcES 'CBO VCB *'CEV ® VCE (V) (V) (V) (V) (nA) j MIN M.N MIN MAX 1 hFE @ IC ® VCE (mA) MIN 1 General Purpose Amplifiers/Switches

6CW 62

Abstract: BYM 268 6CW 59 CMR1U-02M CMSD4448 DAN202VAK bcw 918 CMPS5064 44H11 S02222
Contextual Info: index/Cross Reference Industry Part Number Central Part Number 10BQ015 CMSH1-20ML CMR1U-02M CMSH1-40M EM 66 10MF2 10MQ040 EM EM 63 66 10MQ060 CMSH1-60M EM 66 1N6478 1N6479 CMR1-02M CMR1-02M EM EM 61 Code Selection Guide Industry Part Number Data Sheet 292

BAT 13003 D

Abstract: SMBJ5.OCA bat 13003 em 434 CMHD3595 CMR1U-02M CMSD4448 CMPS5064 CMPSH-3SE CMSH3-40
Contextual Info: index/Cross Reference Industry Part Number Central Part Number CMXD4448 1MN10 10BQ015 CMSH1-20ML CMR1U-02M 10MF2 10MQ040 CMSH1-40M 10MQ060 CMSH1-60M 1N6478 CMR1-02M 1N6479 CMR1-02M 1N6481 CMR1-04M 1N6482 CMR1-06M 1N6483 CMR1-10M CMR1-10M 1N6484 1S2835 CMPD2836

BC5508

Abstract: 6CW66 BC5588 BC8488 TRANSISTOR bc5508 1GW NPN 8C546 smd transistor marking 1gw 1gw transistor SMD Transistors 1gw
Contextual Info: Selection Guide Page Small Signal Transistors 42 Small Signal MOSFETs 43 Junction FETs 44 Power Transistors 49 Switching Diodes 50 Schottky Diodes 51 Low Leakage Diodes 52 Stabistor Diodes 52 Zener Diodes 53 Transient Voltage Suppressors TVS 57 Current Limiting Diodes

TRANSISTOR NPN BA RV SOT - 89

Abstract: bc816 transistor ZT 2222a BO338 CMPSH-3SE 2222A transistors NPN 800V 900 watt 3a TR 3906 PNP SM BG SOT26 CMPZ4124
Contextual Info: Selection Guide Page Small Signal Transistors 44 Small Signal DMOS FETs 55 Junction FETs 56 Digital Transistor 56 Power Transistors 57 Switching Diodes 60 Schottky Diodes 63 Low Leakage Diodes 66 Ultra Low Leakage Diodes 66 Stabistor Diodes 67 Zener Diodes

Schottky Diode SOT-89

Abstract: MBRL130 MBRL140 BAT54S SOT-23 CMR1U-02M SOT-89 MBRL120 MURS120 SMA BCX53 Rohm DPAK
Contextual Info: Competitive Part List Central Semiconductor Corp. 1. SOT-89 / SOT-223 Small Signal Transistors Our primary competition on the following devices is Philips, Siemens and Motorola. Competitor P/N BC868 BC869 BCP28 BCP29 BCP51, -10, -16 BCP52, -10, -16 BCP53, -10, -16

2N4033

Abstract: TRANSISTOR W 59 transistor 2N4033 CMPT4033 CP705 CXT4033 CZT4033
Contextual Info: PROCESS CP705 Small Signal Transistor PNP - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 31 x 31 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.9 x 11.8 MILS Emitter Bonding Pad Area 6.5 x 13.8 MILS Top Side Metalization

a42e

Abstract: IC 7410 sot-89 A63 CZT900K npn 2907A 2222a A77 SOT23 2222ae A92E 3906 npn
Contextual Info: Small Signal Transistors Surface Mount Packages Actual Size SOD-923 SOT-923 SOT-953 SOD-523 SOT-523 SOT-563 SOD-323 SOT-323 SOT-363 SOD-123 SOD-123F SOT-23 SOT-23F SOT-143 SOT-26 SOT-28 SOT-89 SOT-223 SOT-228 SMA SMB SMC SOIC-16 HD DIP TLP Tiny Leadless

transistor 2N4033

Abstract: 2N4033 CMPT4033 CP705 CXT4033 CZT4033
Contextual Info: PROCESS CP705 Central Small Signal Transistor TM Semiconductor Corp. PNP - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 31 x 31 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.9 x 11.8 MILS Emitter Bonding Pad Area 6.5 x 13.8 MILS