CXT2907A Search Results

Contextual Info: Transistors IC SMD Type Product specification CXT2907A Features High current max.600mA Low voltage (max.60V) Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -60 V Collector-emitter voltage VCEO -60 V Emitter-base voltage

CXT2907A

Contextual Info: Central CXT2907A TM Semiconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal

Contextual Info: Central' CXT2907A Sem iconductor Corp. PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and

CXT2907A

Contextual Info: Central“ C XT2907A Sem iconductor Corp. PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SE M IC O N D U C T O R CXT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general pu rpose and

Contextual Info: Central" CXT2907A semiconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal

Contextual Info: Central CXT2907A TM Semiconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal

Contextual Info: CXT2907A w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT2907A type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose

Contextual Info: Central" Semiconductor Corp. CXT2907A PNP SILICON TRANSISTOR DESCRIPTION: The CEN TRAL S EM IC O N D U C T O R CXT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and

CXT2907A

Contextual Info: Central CXT2907A TM Semiconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT2907A type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal

SOT89 MARKING CODE B2

Contextual Info: Central' CXT2907A Semiconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT2907A type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal

CXT2907A

Contextual Info: Central CXT2907A TM Semiconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT2907A type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal

T2907A

Abstract: cd 100 transistor
Contextual Info: Central C X T2907A TM Sem i c o n d u c t o r C o r p . PNP SILICON TRANSISTOR DESCRIPTION: The C ENTRAL S EM IC O N D U C TO R CXT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,

CXT2907A

Contextual Info: CXT2907A w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT2907A type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose

Ob110

Abstract: CXT2907A
Contextual Info: Transistors SMD Type Surface Mount PNP Switching Transistor CXT2907A Features High current max.600mA Low voltage (max.60V) Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -60 V Collector-emitter voltage VCEO -60

k0303

Contextual Info: Central Semiconductor Corp. C X T 2 90 7A PNP SILICON TRANSISTOR DESCRIPTION: T he CENTRAL S E M IC O N D U C T O R CXT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and

SMD Code 12W SOT23

Abstract: 12W SMD MARKING CODE smd 2n2907a 2n2222a SOT223 2N2222A smd 6E SMD CODE MPSA42 SMD SMD MARKING CODE 12w smd npn darlington SMD CODE SOT89 lc
Contextual Info: SMD Transistors SOT-89 Case 1.2W TYPE NO. CBCX68 CBCX69 CXT2222A CXT2907A CXT3019 CXT3904 CXT3906 CXT4033 CXT5401 CXT5551 CXTA14 CXTA42 CXTA64 CXTA92 DESCRIPTION NPN HIGH CURRENT PNP HIGH CURRENT NPN AMPL'SWITCH PNP AMPt/SWITCH NPN HIGH CURRENT NPN AM PL/SWITCH

2N2907A

Abstract: 2N2905A CMPT2907A CMST2907A CXT2907A CZT2907A PN2907A 2N2907A die
Contextual Info: PROCESS CP591X Small Signal Transistor PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 5.9 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS Top Side Metalization

marking code ff SMD Transistor

Abstract: SMD MARKING CODE C2U SMD MARKING CODE C1G C2U SOT-89 transistor smd 2N4403 c1g smd 2N3904 TRANSISTOR SMD SOT23 transistor 2N2222A RF transistor marking IN SOT-89 2N3640
Contextual Info: CENTRAL SE MI C ON D UC T O R ÜË dI~ § M a n ta 00G0430 3 f r-z 7 -2 ? ~ @§nijg§£3S Cestirai liüiie@ndugf@? gsrp. ♦I Central semiconductor Corp. Ï S tfii s@rusüG mö©g @? @@pp. SURFACE MOUNTED DEVICES TRANS I St OÄ: SOT- 23, SOT-89 145 Adams Avenue

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

6CW 62

Abstract: BYM 268 6CW 59 CMR1U-02M CMSD4448 DAN202VAK bcw 918 CMPS5064 44H11 S02222
Contextual Info: index/Cross Reference Industry Part Number Central Part Number 10BQ015 CMSH1-20ML CMR1U-02M CMSH1-40M EM 66 10MF2 10MQ040 EM EM 63 66 10MQ060 CMSH1-60M EM 66 1N6478 1N6479 CMR1-02M CMR1-02M EM EM 61 Code Selection Guide Industry Part Number Data Sheet 292

BAT 13003 D

Abstract: SMBJ5.OCA bat 13003 em 434 CMHD3595 CMR1U-02M CMSD4448 CMPS5064 CMPSH-3SE CMSH3-40
Contextual Info: index/Cross Reference Industry Part Number Central Part Number CMXD4448 1MN10 10BQ015 CMSH1-20ML CMR1U-02M 10MF2 10MQ040 CMSH1-40M 10MQ060 CMSH1-60M 1N6478 CMR1-02M 1N6479 CMR1-02M 1N6481 CMR1-04M 1N6482 CMR1-06M 1N6483 CMR1-10M CMR1-10M 1N6484 1S2835 CMPD2836

2N2907A die

Abstract: 2N2907A PN2907A equivalent 2N2907A 2N2905A CMPT2907A CMST2907A CP591V CXT2907A CZT2907A
Contextual Info: PROCESS CP591V Small Signal Transistor PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS Top Side Metalization

2N2907A die

Abstract: PN2907A
Contextual Info: PROCESS CP591V Small Signal Transistor PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS Top Side Metalization

BC5508

Abstract: 6CW66 BC5588 BC8488 TRANSISTOR bc5508 1GW NPN 8C546 smd transistor marking 1gw 1gw transistor SMD Transistors 1gw
Contextual Info: Selection Guide Page Small Signal Transistors 42 Small Signal MOSFETs 43 Junction FETs 44 Power Transistors 49 Switching Diodes 50 Schottky Diodes 51 Low Leakage Diodes 52 Stabistor Diodes 52 Zener Diodes 53 Transient Voltage Suppressors TVS 57 Current Limiting Diodes