CXT5401 Search Results

CXT5401

Abstract: KXT5401
Contextual Info: Transistors SMD Type Surface Mount PNP Silicon Transistor KXT5401 CXT5401 SOT-89 Unit: mm 4.50 1.50 +0.1 -0.1 +0.1 -0.1 High current (max. 500mA). Low voltage (max. 150 V). +0.1 0.53-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1 0.48-0.1 +0.1 0.80-0.1 +0.1 2.50-0.1

diode sot-89 marking code

Abstract: sot-89 marking code transistor NF marking code CXT5401E CXT5551E SOT89 MARKING CODE
Contextual Info: Central CXT5401E TM Semiconductor Corp. ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5401E is a PNP Silicon Transistor, packaged in an SOT-89 case, designed for general purpose amplifier applications requiring high breakdown

Contextual Info: CXT5401 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5401 type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier

CXT5401

Contextual Info: CXT5401 Central TM Semiconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5401 type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high

Contextual Info: Transistors SMD Type Product specification KXT5401 CXT5401 SOT-89 Unit: mm 4.50 1.50 +0.1 -0.1 +0.1 -0.1 High current (max. 500mA). Low voltage (max. 150 V). +0.1 0.53-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1 0.48-0.1 +0.1 0.80-0.1 +0.1 2.50-0.1 Features +0.1

Contextual Info: Central“ Semiconductor Corp. CXT5401 DESCRIPTION: PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CXT5401 type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.

CXT5401

Contextual Info: Central CXT5401 TM Semiconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5401 type is an PNP silicon transistor manufactured bythe epitaxial planar process, epoxy molded in a surface mount package, designed for high

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# CXT5401 Features • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information

CXT5401

Abstract: 160V 200A TRANSISTOR
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89 Plastic-Encapsulate Transistors SOT-89 CXT5401 TRANSISTOR PNP 1. BASE FEATURE z Switching and amplification in high voltage Applications such as telephony z Low current(max. 500mA) z High voltage(max.160v)

Contextual Info: CXT5401E ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5401E is a PNP Silicon Transistor, packaged in an SOT-89 case, designed for general purpose amplifier applications

CXT5401

Contextual Info: Central CXT5401 TM Semiconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5401 type is an PNP silicon transistor manufactured bythe epitaxial planar process, epoxy molded in a surface mount package, designed for high

CXT5401

Contextual Info: CXT5401 SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5401 type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# CXT5401 Features • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information

sot69

Contextual Info: Central S e m ico n d u cto r Corp. CXT5401 DESCRIPTION: PNP SILICON TRANSISTOR TN> CENTRAL SEMICONDUCTOR CXTS401 type is PN Pstlicon transistor manulaciurod by tho cp<tax>aJ planar process, epoxy molded in a surface mount package, destgnod for high vortjgo am pifiei applications.

2N5401

Abstract: transistor 2N5401 CMPT5401 CP716 CXT5401 CZT5401
Contextual Info: PROCESS CP716 Central Small Signal Transistor TM Semiconductor Corp. PNP - High Voltage Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 4.0 x 4.0 MILS Emitter Bonding Pad Area 4.7 x 4.7 MILS

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

CMPZ4124

Abstract: CMZ5930B CMZ5945B CMZ5947B Transistor 1602c BC327/transistor bc547 bk 045 CMPZ4618 CMPZ4614 CMZ5948B CMZ5936B
Contextual Info: Small Signal Transistors U.S Specifications Preferred Series SOT-23 Case, 350mW (Continued on next page) b v Ce o b v ebo •SVcES 'CBO VCB *'CEV ® VCE (V) (V) (V) (V) (nA) j MIN M.N MIN MAX 1 hFE @ IC ® VCE (mA) MIN 1 General Purpose Amplifiers/Switches

Contextual Info: Si3232 D UAL P R O G R A M M A B L E C M O S S L I C WITH L I N E M O N I T O R I N G Features  Ideal for customer premise applications  Low standby power consumption: <65 mW per channel   Internal balanced ringing to 65 Vrms   Software programmable parameters:

CXT5401

Abstract: ny transistor CMPT5401 CMUT5401 CP716V
Contextual Info: PROCESS CP716V Small Signal Transistors PNP - High Voltage Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 4.0 x 4.0 MILS Emitter Bonding Pad Area 4.7 x 4.7 MILS Top Side Metalization

diac kr 206

Abstract: BAS70WT SMBJ11CA FR107 SOD-123 db1 diac EX 0045 bm diode zener 10A06 sources 812 6V8A Zener Diode pev LF marking PL 15Z DIODE
Contextual Info: PRODUCT CATALOG 2015 MCC TM Micro Commercial Components COMPLETE DISCRETE SEMICONDUCTORS SOLUTIONS POWERED BY SERVICE MCCSEMI.COM MCC TM Micro Commercial Components TM Where to Buy Micro Commercial Components www.arrownac.com www.digikey.com www.futureelectronics.com

Contextual Info: S i 3 2 2 0/25 DUAL PROSLIC PROGRAMMABLE CMOS SLIC/CODEC Features Performs all BORSCHT functions Ideal for applications up to 18 kft Internal balanced ringing to 65 Vrms Si3220 External bulk ringer support (Si3225) Low standby power consumption: <70 mW per channel

CMPT5401

Abstract: CMUT5401 CP716V CXT5401
Contextual Info: PROCESS CP716V Small Signal Transistors PNP - High Voltage Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 4.0 x 4.0 MILS Emitter Bonding Pad Area 4.7 x 4.7 MILS Top Side Metalization

a42e

Abstract: IC 7410 sot-89 A63 CZT900K npn 2907A 2222a A77 SOT23 2222ae A92E 3906 npn
Contextual Info: Small Signal Transistors Surface Mount Packages Actual Size SOD-923 SOT-923 SOT-953 SOD-523 SOT-523 SOT-563 SOD-323 SOT-323 SOT-363 SOD-123 SOD-123F SOT-23 SOT-23F SOT-143 SOT-26 SOT-28 SOT-89 SOT-223 SOT-228 SMA SMB SMC SOIC-16 HD DIP TLP Tiny Leadless

kb3310qf c1

Abstract: KB3310QF mmc ga201 KB3310 kb3310qf b0 quanta at2 KB3310QF-B0 AOZ1021 quanta at1 quanta
Contextual Info: 5 D 4 VTERM +0.9V VTT(+1.05V) +1.5VSUS +1.5V +1.8VMEM +1.8V +2.5V 3VPCU +3.3V +3.3VSUS LCD_3.3V LCD_5V +5V 3 2 IL1 Block Diagram B -> C 2008-01-08 VID[0:6] C7-M (ULV) VCORE:+1.196 ~ +0.748 VCCP:+1.05V VCCA:+1.8V or +1.5V +/- CPU_CLK +/- HCLK CRT 256M/512M/1GB