CXT5401 Search Results

CXT5401

Abstract: KXT5401
Contextual Info: Transistors SMD Type Surface Mount PNP Silicon Transistor KXT5401 CXT5401 SOT-89 Unit: mm 4.50 1.50 +0.1 -0.1 +0.1 -0.1 High current (max. 500mA). Low voltage (max. 150 V). +0.1 0.53-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1 0.48-0.1 +0.1 0.80-0.1 +0.1 2.50-0.1

diode sot-89 marking code

Abstract: sot-89 marking code transistor NF marking code CXT5401E CXT5551E SOT89 MARKING CODE
Contextual Info: Central CXT5401E TM Semiconductor Corp. ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5401E is a PNP Silicon Transistor, packaged in an SOT-89 case, designed for general purpose amplifier applications requiring high breakdown

Contextual Info: CXT5401 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5401 type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier

CXT5401

Contextual Info: CXT5401 Central TM Semiconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5401 type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high

639 TRANSISTOR PNP

Abstract: transistor C 639 W
Contextual Info: Central" CXT5401 Semiconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEM ICONDUCTOR CXT5401 type is an PNP silicon transistor manufactured bythe epitaxial planar process, epoxy molded in a surface mount package, designed for high volt­

Contextual Info: Central Semiconductor Corp. CXT5401 DESCRIPTION: PNP SILICON TRANSISTO R TheC EN TRALSEM IC O N D U C TO CXT5401 type is an PN P silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.

Contextual Info: Transistors SMD Type Product specification KXT5401 CXT5401 SOT-89 Unit: mm 4.50 1.50 +0.1 -0.1 +0.1 -0.1 High current (max. 500mA). Low voltage (max. 150 V). +0.1 0.53-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1 0.48-0.1 +0.1 0.80-0.1 +0.1 2.50-0.1 Features +0.1

Contextual Info: Central“ Semiconductor Corp. CXT5401 DESCRIPTION: PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CXT5401 type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.

CXT5401

Contextual Info: Central CXT5401 TM Semiconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5401 type is an PNP silicon transistor manufactured bythe epitaxial planar process, epoxy molded in a surface mount package, designed for high

Contextual Info: CXT5401E ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5401E is a PNP Silicon Transistor, packaged in an SOT-89 case, designed for general purpose amplifier applications

Contextual Info: Central" CXT5401 Sem iconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5401 type is an PNP silicon transistor manufactured bythe epitaxial planar process, epoxy molded in a surface mount package, designed for high volt­

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# CXT5401 Features • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information

CXT5401

Abstract: 160V 200A TRANSISTOR
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89 Plastic-Encapsulate Transistors SOT-89 CXT5401 TRANSISTOR PNP 1. BASE FEATURE z Switching and amplification in high voltage Applications such as telephony z Low current(max. 500mA) z High voltage(max.160v)

Contextual Info: CXT5401E ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5401E is a PNP Silicon Transistor, packaged in an SOT-89 case, designed for general purpose amplifier applications

CXT5401

Contextual Info: CXT5401 SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5401 type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# CXT5401 Features • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information

sot69

Contextual Info: Central S e m ico n d u cto r Corp. CXT5401 DESCRIPTION: PNP SILICON TRANSISTOR TN> CENTRAL SEMICONDUCTOR CXTS401 type is PN Pstlicon transistor manulaciurod by tho cp<tax>aJ planar process, epoxy molded in a surface mount package, destgnod for high vortjgo am pifiei applications.

CXT5401

Contextual Info: Central" S e m ic o n d u cto r Corp. CXT5401 DESCRIPTION: P N P SILICO N T R A N S I S T O R The C E N T R A L SEM IC O N D U C T O R CXT5401 type is an PN P silicon transistor man ufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for

SMD Code 12W SOT23

Abstract: 12W SMD MARKING CODE smd 2n2907a 2n2222a SOT223 2N2222A smd 6E SMD CODE MPSA42 SMD SMD MARKING CODE 12w smd npn darlington SMD CODE SOT89 lc
Contextual Info: SMD Transistors SOT-89 Case 1.2W TYPE NO. CBCX68 CBCX69 CXT2222A CXT2907A CXT3019 CXT3904 CXT3906 CXT4033 CXT5401 CXT5551 CXTA14 CXTA42 CXTA64 CXTA92 DESCRIPTION NPN HIGH CURRENT PNP HIGH CURRENT NPN AMPL'SWITCH PNP AMPt/SWITCH NPN HIGH CURRENT NPN AM PL/SWITCH

Contextual Info: Central CXT5401 TM Semiconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5401 type is an PNP silicon transistor manufactured bythe epitaxial planar process, epoxy molded in a surface mount package, designed for high

MMS8050-L

Abstract: 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664
Contextual Info: TM Micro Commercial Components SMALL SIGNAL&POWER TRANSISTORS MCC Part Number VCEO V IC (A) hFE @ VCE & IC VCE(sat) & VBE(sat) @ IC & IB hFE hFE VCE IC Min. Max. (V) (mA) VCE(sat) VBE(sat) Max.(V) Max.(V) fT @ VCE & IC Polarity IC IB fT Min. TPY. fT Max.

2N5401

Abstract: transistor 2N5401 CMPT5401 CP716 CXT5401 CZT5401
Contextual Info: PROCESS CP716 Central Small Signal Transistor TM Semiconductor Corp. PNP - High Voltage Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 4.0 x 4.0 MILS Emitter Bonding Pad Area 4.7 x 4.7 MILS

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

CMPZ4124

Abstract: CMZ5930B CMZ5945B CMZ5947B Transistor 1602c BC327/transistor bc547 bk 045 CMPZ4618 CMPZ4614 CMZ5948B CMZ5936B
Contextual Info: Small Signal Transistors U.S Specifications Preferred Series SOT-23 Case, 350mW (Continued on next page) b v Ce o b v ebo •SVcES 'CBO VCB *'CEV ® VCE (V) (V) (V) (V) (nA) j MIN M.N MIN MAX 1 hFE @ IC ® VCE (mA) MIN 1 General Purpose Amplifiers/Switches