CP317 Search Results

PN3563 equivalent

Abstract: 2N5770 2n918 transistor 2n918 die 2N2857 2N5179 2N918 BFY90 CMPT918 CP317
Contextual Info: PROCESS CP317 Small Signal Transistor NPN - RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.5 x 14.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 2.4 x 2.2 MILS Emitter Bonding Pad Area 2.4 x 2.2 MILS Top Side Metalization Al - 30,000Å

ny transistor

Abstract: 2N5770 2N2857 2n918 die 2N918 2N5179 2N2857 DIE PN3564 PN3563 BFY90
Contextual Info: PROCESS CP317 Central Small Signal Transistor TM Semiconductor Corp. NPN - RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.5 x 14.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 2.4 x 2.2 MILS Emitter Bonding Pad Area 2.4 x 2.2 MILS

tda8362b

Abstract: OM8384J OM8383S TDA8363C msc 1697 BGY252 tda9155 PHILIPS OM8383S tda5331t BGY262
Contextual Info: Philips Semiconductors Product Discontinuation Notice DN45 June 30, 2001 SEE DN45 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

MARKING PQ

Contextual Info: Central CMUT5179 Semiconductor Corp. SURFACE MOUNT ULTRAmini™ NPN SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUT5179 type is an NPN silicon RF transistor manufac­ tured by the epitaxial planar process, epoxy mold­ ed in an ULTRAmini™ surface mount package,

PCA1318P

Abstract: philips Pca1318p tda8369 TEA5713 pca1318 ON4801 92112 eeprom on4800 ON4836 eeprom 92112
Contextual Info: PRODUCT DISCONTINUATION DN42 NOTICE December 31, 1999 CONTRACTS DEPT. NOTE NEW CODING DISCONTINUATION TYPE CODE T= Type number fully withdrawn N= Packing option ONLY withdrawn SOURCE CODE C = Customer specific product M = Multi source product S = Sole source product

ph 4148 zener diode

Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Contextual Info: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS

TDA8842 s1

Abstract: ALP018TT BLV1819-30 TDA8842 S1 tda8842 s1 datasheet TDA8842 S1 TDA4859ps OH191 blv1819-4a blv1819 BAX12 equivalent
Contextual Info: PHILIPS SEMICONDUCTORS Product Discontinuation Notice DN47 June 30, 2002 SEE DN47 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.

Philips tea1090

Abstract: tea1090 tea1402 pcf2705p philips TEA1090T SAA7321GP TDA2579A LMT 393 N TDA3653bq TEA5713
Contextual Info: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-41 DATED JUNE 30, 1999 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION PHILIPS LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODES COMMENTS

Contextual Info: Central” Semiconductor Corp. CMPT918 NPN SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEM ICONDUCTOR CMPT918 type is an NPN silicon RF transistor manufac­ tured by the epitaxial planar process, epoxy mold­ ed in a surface mount package, designed for high

Contextual Info: Central" Semiconductor Corp. CMPT918 NPN SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT918 type is an NPN silicon RF transistor manufac­ tured by the epitaxial planar process, epoxy mold­ ed in a surface mount package, designed for high

Contextual Info: Central CMUT5179 semiconductor Corp. SURFACE MOUNT ULTRAmini™ NPN SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUT5179 type is an NPN silicon RF transistor manufac­ tured by the epitaxial planar process, epoxy mold­ ed in an ULTRAmini™ surface mount package,

CP588V

Abstract: CPD76 CPD96 CP-392V CP307 CP188 CP191 CPD48 CPD80 CPD91
Contextual Info: PCN #: 105 Notification Date: 24 November 2004 145 Adams Avenue Hauppauge, New York 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Mailto: processchange@centralsemi.com http://www.centralsemi.com/processchange Process Change Notice Parts Affected: Small signal discrete semiconductors, wafers, and die in chip form.

Philips TdA3619

Abstract: on4408 tda3619 on4827 TDA5247HT on4785 OF622 FAST RECOVERY DIODE ON4913 on4802 OQ9811T
Contextual Info: PRODUCT DISCONTINUATION DN43 NOTICE June 30, 2000 Exhibit A SEE DN43 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.

BF244 datasheet

Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
Contextual Info: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216

UJT 2n3904

Abstract: transistor 2N4033 ujt 2N6027 2n4209 datasheet mj15003 equivalent transistor 2N5401 mj15004 2N4393 MJ15003 MJ15004 BAV45
Contextual Info: Selection Guide Page Small Signal Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Bipolar Power Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Programmable UJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

sot-23 marking code pe

Abstract: marking code pe sot-23
Contextual Info: Central Semiconductor Corp. CMPT5179 NPN SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5179 type is an NPN silicon RF transistor manufac­ tured by the epitaxial planar process, epoxy mold­ ed in a surface mount package, designed for low

CP592

Abstract: cmhd3595 cmkt5088 PTA44 z2l4 ut3906 KT2907A KT2207 CMXDM7002A PT3904
Contextual Info: Characteristic Curve maex Central Part # Central Process# 2N7002 BAS56 BCX51 thru BCX53 BCX54 thru B CX56 BZX84C2V4 thru BZX84C6V2 BZX84C6V8 thru BZX84C51 CBCP68 CBCP69 CBCX68 CBCX69 CCLH M 080 thru CCLH M 150 CCLM 0035 thru CCLM 5750 C JD 31C CJD 32 C CJD 41 C

2N2645

Abstract: cpd83v-cmpd7000-ws 1N3070 CPZ25 CPD83V-1N4148-WN CP191V-2N2222A-WN CPZ25-CMZ5937B-WR CPD83V CPD83V-1N4148-WS CPD98V
Contextual Info: PCN #: 119 Notification Date: 16 December 2010 mailto:processchange@centralsemi.com http://www.centralsemi.com/processchange Product / Process Change Notice Parts Affected: Small signal discrete semiconductor wafers. Extent of Change: Wafer diameter has been changed from 4” to 5”.

CP3110

Abstract: CP3033A CP3082 CP3120 CP3010 GI 536 DIODES CP3150 U 1560 CQ 245 CP3009 UL 486 tables
Contextual Info: The suppressors are intended for telecommunication, data transmission and general applications where permanent damage could otherwise be caused to integrated circuits, m.o.s. devices, hybrids and other voltage sensitive semiconductors and components by surges deriving from lightning, electrostatic discharges, NEMP, inductive switching, etc.

A 798 transistor

Abstract: 382 sot23
Contextual Info: Central Semiconductor Corp. CMPT5179 NPN SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5179 type is an NPN silicon RF transistor manufac­ tured by the epitaxial planar process, epoxy mold­ ed in a surface mount package, designed for low

Contextual Info: Typical Electrical Characteristic Curves Page Page Characteristic Curve Index . . CP108 . . CP117 . . CP147 . .