BUS50 Search Results

BUS50

Contextual Info: BUS50 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

Contextual Info: BUS50 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

Contextual Info: BUS50 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

Motorola 3-351

Abstract: BUS50 Bipolar Power Transistor Data
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUS50 SWITCHMODE Series NPN Silicon Power Transistors The B U S5 0 transistor is designed for low voltage, high-speed, power switching in inductive circuits where fall time is critical. It is particularly suited for battery

BUS11A

Abstract: BUV11 BUT91
Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No BUR51 BUR51S BUR52 BUR52S BUS11 BUS11 CECC BUS11A BUS11A CECC BUS 12 BUS12A BUS 13 BUS13A BUSI 4 BUS14A BUS50 BUS51 BUS52 BUT13 BUT13P BUT70 BUT70MC BUT72 BUT90 BUT90C BUT91 BUT92 BUT92A BUT92AS

Contextual Info: MOTOROLA I SEMICONDUCTOR BUS50 TECHNICAL DATA 70 AMPERES NPN SIUCON POWER TRANSISTOR SWITCHMODE SERIES NPN SIUCON POWER TRANSISTORS 125 VO LTS BVCEO 350 W ATTS 200 V (BVCES) The B U S 5 0 transistor is designed for low voltage, high-speed, pow er sw itching in inductive circuits where fall time is critical. It is particularly

2SC1403

Abstract: 2N6107 equivalent 2SD425 2SB743 BU326 BU108 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Series NPN Silicon Power Transistors The BUS50 transistor is designed for low voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for battery switchmode applications such as:

bus50

Contextual Info: ON Semiconductort BUS50 SWITCHMODEt Series NPN Silicon Power Transistors 70 AMPERES NPN SILICON POWER TRANSISTOR 125 VOLTS BVCEO 350 WATTS 200 V (BVCES) The BUS50 transistor is designed for low voltage, high–speed, power switching in inductive circuits where fall time is critical. It is

BUT13P

Abstract: BLN20 BUT14 SOT93 BUV62 BUS50 BUS13A BUV24 BUV41 but72
Contextual Info: *4ö E ì> Ö1331Ö7 GG004S4 044 •SML B SEMELABE REL & HIGH ENERGY BI-POLAR TRANSISTORS Type Number BUS13 BUS13A BIJS14 BUSINA BUS50 BUS51 BUS52 BUT11 ia BUT13 BUT13P BUT14 BUT34 BIJT35 BUT70 IMJT72 BUT90 BOT91 BUT92 BUT92A KIVION BiJVll BUV18 BUV19 BIJV20

Motorola 3-351

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA B U S5 0 SW IT C H M O D E Series N PN Silicon Power TVansistors The BUS50 transistor is designed for low voltage, high-speed, power switching in in d u ctiv e c irc u its w h e re fail tim e Is c ritic a l. It is p a rtic u la rly su ite d fo r ba ttery

EM- 546 motor

Contextual Info: MOTOROLA O rder this docum ent by BUS50/D SEMICONDUCTOR TECHNICAL DATA BUS50 S W IT C H M O D E S e rie s NPN S ilic o n P o w e r T ra n s is to rs The BUS50 transistor is designed for low voltage, high-speed, power switching in in d u ctive c ircu its w h e re fall tim e is critic a l. It is p a rtic u la rly su ite d fo r b a tte ry

transistor tl 187

Abstract: BUS50 MOTOROLA TRANSISTOR TRANSISTOR 023
Contextual Info: MOTOROLA Order this document by BUS50/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Series NPN Silicon Power Transistors The BUS50 transistor is designed for low voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for battery

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

LCM 1601

Abstract: C175
Contextual Info: UNCONTROLLED DOCUMENT PART NU M BER REV. L C M - S 0 1601 DSF CHARACTER DETAIL 3 .7 7 [0.148II 3.07 CO.lEi: 0.55 [0.022] 0,75 CAUriON: STATIC SEN SIW E DEVICE FOLLOW PROPER EJSD. HANDUNG PROCEDURES WHEN WORKING WITH THIS PART. 6,56 [0 ,0 9 8 ] _ 7 5 ,0 0 4 PLS.5

transistor buv18a

Abstract: motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"
Contextual Info: STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR COLLECTOR CONNECTED TO TAB Resistive Switching IcCont Amps Max VcEO sus) Volts Min 0.5 300 MPSU10 0.8 40 MPSU02 1 120 2 Device Type *s US Max tf US Max fT MHz Min P q (Case) Watts hFE Min/Max @ lc Amp MPSU60 30 min

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

Contextual Info: BUS Single-Output DC-DC Series Data Sheet 3 Watts Features • • • • • • • • Industry-standard DIP package Industry-standard pinout 85°C case operation Short-circuit protection 5V input Input LC filter Regulated output 500V isolation Dimensions: 1.25” 31.8mm x 0.80” (20.3mm) x 0.40” (10.2mm)

8X2 LCD

Abstract: LCD 6x2
Contextual Info: UNCONTROLLED DOCUMENT REV, A PART NUMBER REV. LCM — S00802DSN A E.C.N. NUMBER AND REVISION COMMENTS DATE 4.20.07 E.C.N. # 1 1 1 4 9. CAUTION! STATIC SENSITIVE DEVICE FOLLOW PROPER E.S.D. HANDLING PROCEDURES WHEN WORKING WITH THIS PART. CHARCfER DETAIL 3 .5 5

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,