TFK U 217 B
Abstract: 3 TFK 219 TFK BPX99 tfk 4 219 diode tfk s 220 TFK 217 TFK 19 001 diode s .* tfk IR diodes TFK 4 TFK diodes
Contextual Info: 4Mf BPX99 'W Monolithischer Silizium-NPN-Epitaxial-Foto-Darlingtontransistor Monolithic Silicon N P N Epitaxial Photo Darlington Transistor A n w e ndungen: Direkte Ansteuerungen von Relais, Magnetventilen, Kleinmotoren etc. A p p lic a tio n s : Direct driving of relays, magnetic valves, sm all motors etc.
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100qimb-25ctfk u 217 b3 tfk 219+8tfk bpx99tfk 4 219diode tfk s 220tfk 217tfk 19 001diode s .* tfkir diodes tfk 4tfk diodes
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Contextual Info: T e m ic BPX99R .S e ni i c » n il u i i Silicon Darlington Phototransistor Description BPX99R is an extra high sensitive monolithic silicon epi taxial planar Darlington phototransistor in a hermetically sealed low profile TO—16 metal case. The solid metal base allows the user to mount the device
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bpx99ro--165-jul-9615-jul-96 |
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BPX99R
Abstract: Telefunken Phototransistor
Contextual Info: BPX99R Silicon Darlington Phototransistor Description BPX99R is an extra high sensitive monolithic silicon epitaxial planar Darlington phototransistor in a hermetically sealed low profile TO–46 metal case. The solid metal base allows the user to mount the device
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bpx99rd-7402515-jul-96telefunken phototransistor |
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BPX99R-2
Abstract: TO46 lens phototransistor BPX99R BPX99R-3 R/BPX99R-2
Contextual Info: Te m ic BPX 99 R TELEFUNKEN Semiconductors Silicon Darlington Phototransistor Description BPX99R is an extra high sensitive monolithic silicon epitaxial planar Darlington phototransistor in a hermetically sealed low profile T O -46 metal case. The solid metal base allows the user to mount the
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bpx99r950nmjn20g1bggllb04+4bpx99r-2to46 lens phototransistorbpx99r-3r/bpx99r-2
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BPX99R
Abstract: BPX99 TO46 lens phototransistor Telefunken Phototransistor 8326K mm glass lens phototransistor
Contextual Info: Tem ic BPX99R S e m i c o n d u c t o r s Silicon Darlington Phototransistor Description BPX99R is an extra high sensitive monolithic silicon epi taxial planar Darlington phototransistor in a hermetically sealed low profile TO-46 metal case. The solid metal base allows the user to mount the device
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bpx99r950nm15-jul-96d1s144+5bpx99to46 lens phototransistortelefunken phototransistor8326kmm glass lens phototransistor
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BPX99
Abstract: lm 7410
Contextual Info: TELEFUNKEN ELECTRONIC 1?E D m 0008534 0 • AL6G BPX99 TmUHFttiKlKIKl electronic CreateTeehootogj« '_ r - w - 6 3 Monolithic Silicon NPN Epitaxial Photo Darlington Transistor i t Applications: Direct driving of relays, magnetic valves, small motors etc.
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00dflbpx9946iai950nm+1lm 7410
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BPX99
Abstract: BPX99R
Contextual Info: TELEFUNKEN Semiconductors BPX 99 R Silicon Darlington Phototransistor Description BPX99R is an extra high sensitive monolithic silicon epitaxial planar Darlington phototransistor in a hermetically sealed low profile TO–46 metal case. The solid metal base allows the user to mount the
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bpx99rd-74025bpx99 |
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TIL81
Abstract: Phototransistor TIL81 Phototransistor TIL100 lens photodiode phototransistor Phototransistor bpx25 Phototransistor zm110 Infrared phototransistor TO18 BPW41D ferranti
Contextual Info: SILICON PLANAR PHOTOTRANSISTORS GENERAL APPLICATIO N S OF FERRANTI PHOTOTRANSISTORS Alarm Systems, Process Control, Edge and Position Sensing, Optical Character Recognition, Tape Readers, Card Readers, Electronic Flash Control, etc. ZM100 SER IES TO-18 HERM ETIC ZM100/110, BPX25/29
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zm100zm100/110bpx25/29zm110+13bpx25mrd310mrd370til81phototransistor til81phototransistortil100lens photodiode phototransistorphototransistor bpx25phototransistor zm110infrared phototransistor to18bpw41dferranti
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BPW89
Abstract: S284P BPW21 BPW47B BPW98 BPW84 S213P BPW24R 810 W47A A953
Contextual Info: TELEFUNKEN ELECTRONIC HME ]> B flTEODTb Ü G 1 1 1 7 Q 3 B I a I g G Photo Detectors I I Phototransistors in Clear Plastic Package Phototransistors w ith Filter M atched for GaAs IREDs in Plastic Package Package Type • Characteristics Photo sensitive area
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820nmbpv11850nmbpw89+9s284pbpw21bpw47bbpw98bpw84s213pbpw24r 810w47aa953
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Phototransistor TIL81
Abstract: TIL81 Transistor BPX25 til100 Phototransistor bpx25 phototransistor Infrared phototransistor TO18 Phototransistor zm110 phototransistor and applications MRD300
Contextual Info: SILICON PLANAR PHOTOTRANSISTORS GENERAL APPLICATIONS OF FERRANTI PHOTOTRANSISTORS Alarm Systems, Process Control, Edge and Position Sensing, Optical Character Recognition, Tape Readers, Card Readers, Electronic Flash C ontrol, etc. ZM100 SERIES TO-18 HERMETIC ZM100/110, BPX25/29
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zm100zm100/110bpx25/29zm110+12bpx25zm210phototransistor til81til81transistor bpx25til100phototransistor bpx25phototransistorinfrared phototransistor to18phototransistor zm110phototransistor and applicationsmrd300
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BPX99
Abstract: BPW30
Contextual Info: Optoelectronic devices GaAs arrays Multichip arrays, especially for coupling with analogue constructed detector arrays Type Number of elements FigNr. Raster dimensions Characteristics - electrical + optical <Pe mW mA ns ns 16 17 9 9 2.54 2.54 80° 25° 0.53
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bpw30bpx99emitti30 |
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H0A0872-n55
Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1
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1n57221n57231n57241n5725+161n62641n62651n62662004-90xx2600-70xx2n5777-80h0a0872-n55h0a1405-1h0a0865-l51h0a1405hoa708-1hoa9til78 phototransistormoc70t3ir diode til38h0a1874-12
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IR TIL81
Abstract: TIL81 Phototransistor TIL81 2 pin phototransistor diode TIL81 TIL100 PHOTOTRANSISTOR 3 PIN bpx25 phototransistor application circuit Phototransistor bpx25 phototransistor
Contextual Info: BPW41D INFRA-RED PHOTODETECTOR The B P W 4 1 D is a large: area, silicon p.i.n. photodiode having a low junction capacitance and consequently capable of fast response times. The active chip is packaged in a plastic moulding which contains a near infra-red transmissive filter such that the device is sensitive to infra-red radiation only, and
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bpw41dfpt220fpt230fpt320+15fpt330fpt400fpt500fpt530fpt560ir til81til81phototransistor til812 pin phototransistordiode til81til100phototransistor 3 pinbpx25 phototransistor application circuitphototransistor bpx25phototransistor
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Phototransistor TIL81
Abstract: TIL81 Phototransistor TIL100 Phototransistor bpx25 Phototransistor zm110 Phototransistor TIL100 FERRANTI ELECTRONICS Infra-red bpx25 mrd300 equivalent
Contextual Info: COMPETITOR CROSS REFERENCE LIST The following cross-reference list has been compiled as a guide for design engineers and purchasing agents and indicates the nearest Ferranti equivalent to a variety of competitive manufacturer's devices. In some cases there will be minor differences in electrical characteristics and/or package details and
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mrd310zm110mrd370zm100+14mrd810mrd3050bpx29mrd3051phototransistor til81til81phototransistortil100phototransistor bpx25phototransistor zm110phototransistor til100ferranti electronicsinfra-red bpx25mrd300 equivalent
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sil6400
Abstract: STS7500 s520 SSF4500 s7302
Contextual Info: Temic S e m i c « n il u c t o r s Genera] Information Alphanumeric Index T>pe . Type . BP 1 0 4 . . 6 .2 0 7 B P W 8 5 . . . . 320 T E M T 2 2 0 0 . . . 4 ,3 9 8 TSIP7601 . . . . B P V 1 0 . . 5 ,2 0 3
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bpv11bpv11ft4700ess5400+11tsha5201tsha5501tsha6201s4300tsus5201tsus5x12sil6400sts7500s520ssf4500s7302
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led 7 segment anode TIL 702
Abstract: trw 007 diodes TDDG 5250 m 817 optron telefunken transistor opto smd code marking NEC TDDG 5250 hoa 865 DIODE PK IN 5401 7segment sm 4150
Contextual Info: CONTENTS Alphanumeric Index 5 Symbol Designation 7 Type Designation Systems — for LEDs — for Displays — for IR-Emitters — for Laser-Diodes — for Optical Switches 8 8 8 8 8 Classification Code for all LEDs and Displays — for LEDs — Displays 9
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10x10led 7 segment anode til 702trw 007 diodestddg 5250 m+7817 optrontelefunken transistoropto smd code marking nectddg 5250hoa 865diode pk in 54017segment sm 4150
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TEMIC K153P
Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
Contextual Info: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2
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wn1053wn1087-18rwn1087-tr1wn1090+16wn1125wn1142wn1158-tawn1165-tr1wn1170wn934temic k153ptshf5471tfmw5380dn1328tdsr5156dn904tdsr5153hs0038 ir sensortlvd4900tcdf1910
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JFET TRANSISTOR REPLACEMENT GUIDE j201
Abstract: UA6538 DC motor speed control using 555 and ir sensor U2740B-FP UAA145 CQY80 U2840B tcrt9050 TCDF1910 sod80 smd zener diode color band
Contextual Info: Semiconductors Technical Library March 1996 Back Products Overview Communications Automotive Computer Industrial Broadcast Media Aerospace & Defense Communications Applications Telephone ICs Type U3750BM–CP Package 44–pin PLCC Function One chip telephone
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u3750bmu3760mb-fnu3760mb-sdsso-44+14sd-40u3800bmu3810bmu4030bjfet transistor replacement guide j201ua6538dc motor speed control using 555 and ir sensoru2740b-fpuaa145cqy80u2840btcrt9050tcdf1910sod80 smd zener diode color band
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KT853
Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
Contextual Info: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN
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1n57221n57231n57241n5725+161n62641n62651n62662004-90xx3n24x24xtxkt853kt850kt853altr-305dh0a0872-n55h0a1405-1h0a2001moc70t3hoa708-1smd diode 825b
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APY12
Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP
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edition-1978ausgabe-1978bs3934so-26+12ot-114ns371apy12byy32ac176aey26bav77bby20bd545bbav27transistor kt 209 maf367
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cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Contextual Info: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
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aa113aa117aa119bav17+14bav18bav19bav20bav21cqx 87germaniumaeg thyristor t 558 ftda 2516bu208bf506la 4430bf963tda1086transistor bf 175
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