BD312 Search Results

BD-311

Abstract: BD311 BD312
Contextual Info: SavantIC Semiconductor Product Specification BD311 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High DC current gain ·Excellent safe operating area ·Complement to type BD312 APPLICATIONS ·Designed for power amplifier applications PINNING See Fig.2

BD311

Abstract: BD312
Contextual Info: Inchange Semiconductor Product Specification BD311 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High DC current gain ・Excellent safe operating area ・Complement to type BD312 APPLICATIONS ・Designed for power amplifier applications

BD312

Abstract: BD311
Contextual Info: SavantIC Semiconductor Product Specification BD312 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·High DC current gain ·Excellent safe operating area ·Complement to type BD311 APPLICATIONS ·Designed for power amplifier applications PINNING See Fig.2

BD312

Abstract: BD311
Contextual Info: Inchange Semiconductor Product Specification BD312 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・High DC current gain ・Excellent safe operating area ・Complement to type BD311 APPLICATIONS ・Designed for power amplifier applications

bd311

Abstract: bd312 BD312PNP B0312
Contextual Info: DE |b3t,7aS4 DDfiDSa? 3 MOTOROLA SC ÍXSTRS/R F> 6 3 6 7 2 5 4 MOTOROLA SC 96D 8 0 5 8 7 XSTRS/R F NPN MOTOROLA BD311 SEMICONDUCTOR PNP TECHNICAL DATA BD312 COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for high quality amplifiers operating up to 60 Watts

BD312

Abstract: BD-311 BD311 transistor BD312 80588 BD311/312
Contextual Info: DE |b3t,7aS4 DDfiDSa? 3 MOTOROLA SC ÍXSTRS/R F> 6 3 6 7 2 5 4 MOTOROLA SC XSTRS/R 96D F 80587 NPN MOTOROLA BD311 SEMICONDUCTOR PNP TECHNICAL DATA BD312 COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for high quality amplifiers operating up to 60 Watts

Contextual Info: a P R E L IM IN A R Y Advanced Micro Devices Am79C830A FORMAC Plus DISTINCTIVE CHARACTERISTICS • Implements the FDDI Media Access Control MAC layer protocol for ISO standard 9314-2 ■ Pointers to claim and beacon frames ■ Buffer-memory clock frequency range:

BD607

Abstract: BDY17 sd1536-1 mj2940 motorola RCA1C07 bd608
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO on fT tON r hFE ICBO (CE)set Toper Max Max Max ON) Min (Hz) (A) (s) Max (Ohms) Max (°C) 275m 275m 275m 140 140 140 140 140 140 PD Package Style D vices 20 Watts or More, (Cont'd)

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

Am79C82

Contextual Info: P R E L IM IN A R Y Advanced Micro Devices Am79C830 FORMAC Plus DISTINCTIVE CHARACTERISTICS Implements the FDDI Media Access Control MAC layer protocol for ISO standard 9314-2 • Pointers to claim and beacon frames ■ Supports transmit linked-list addressing

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

BD313

Abstract: BD203 BD203 npn npn 40411 BD142 BD181 BD182 BD183 BD201 BD202
Contextual Info: 025 63 54 A DV AN C E D SEM IC ON DUCTOR ADVANCED SEMICONDUCTOR flE DE | 0550354 82D 00052 □□□□□SB I S I L I C O D 7"-? J^o / N TRANSISTORS MAXIMUM RATINGS P d @ Tc=25°C DEVICE TYPE NO. 40408 40411 40412 40458 40537 40539 40594 40595 40608 40611

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

D42C5

Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is

mje521 equivalent

Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry

2N3055

Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes

2N5631 equivalent

Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —

BD179-10 equivalent

Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

sec tip41c

Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power

TRANSISTOR BC 384

Abstract: BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required