BCX38 Search Results

ZTX614 equivalent

Abstract: ZTX614 npn darlington TO92 BCX38 DSA003770 BCX3
Contextual Info: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR ZTX614 ISSUE 1 – APRIL 94 FEATURES * 100 Volt VCEO * 800 mA continuous current * Gain of 10K at IC=500mA * Ptot=1 Watt C B REFER TO BCX38 FOR GRAPHS E E-line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER

BCX38

Contextual Info: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR ISSUE 1 - SEPT 93 FEATU RES * 60 Volt VCE0 * Gain of 10K at lc=0.5 Am p R EFER TO BCX38 FOR G R A P H S ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BOL Collector-Base Voltage VALUE UNIT v CB0 80 V Collector-Emitter Voltage

Contextual Info: DISCONTINUED PLEASE USE ZTX614 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FXT614 ISSUE 1 – FEB 94 FEATURES * 100 Volt VCEO * 800 mA continuous current * Gain of 10K at IC=500mA * Ptot= 1 Watt APPLICATIONS * Lamp, solenoid and relay drivers REFER TO BCX38 FOR GRAPHS

BCX38

Abstract: bcx38c
Contextual Info: Not Recommended for New Design Please Use BCX38C NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FXT38C ISSUE 1 – SEPT 93 FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp B C REFER TO BCX38 FOR GRAPHS E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.

bcx38

Contextual Info: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FXT38C ISSUE 1 - SEPT 93 FEATURES * * 60 Volt VCE0 Gain of 10K at lc=0.5 Amp REFER TO BCX38 FOR GRAPHS E-Line TQ92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VALUE UNIT

bcx38

Contextual Info: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR IS S U E !-A P R IL 94_ FEATURES * 100 Volt VCE0 * 800 m A continuous current * Gain of 10K at Jc=500mA * Ptot=1 Watt REFER TO BCX38 FOR GRAPH S ABSOLUTE M A X IM U M RATINGS.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 BCX38 TRANSISTOR NPN 1.EMITTER FEATURES z High DC Current Gain 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value

BCX38B

Abstract: 10D3
Contextual Info: BCX38B BCX38B Si-Epitaxial Planar Darlington-Transistors Si-Epitaxial Planar Darlington-Transistoren NPN NPN Version 2006-07-24 Power dissipation Verlustleistung 18 9 16 E BC 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case Kunststoffgehäuse TO-92 10D3

bcx38c

Contextual Info: BCX38A/B Not Recommended for New Design, Please Use BCX38C BCX38A/B/C VCE=5V IC/IB=100 hFE - Normalised Gain VCE sat - (Volts) 1.6 -55°C 0.8 +25°C 0.6 +100°C 0.4 +175°C 0.2 0.001 0.1 1 +100°C 1.4 C B E 1.2 1.0 +25°C 0.8 0.4 ABSOLUTE MAXIMUM RATINGS.

BCX38C

Abstract: BCX38A BCX38B
Contextual Info: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS BCX38A BCX38B BCX38C TO-92 Plastic Package E BC ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage

Contextual Info: DISCONTINUED PLEASE USE BCX38C NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FXT38C ISSUE 1 – SEPT 93 FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp B C REFER TO BCX38 FOR GRAPHS E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL

bcx38c

Abstract: bcx38b BCX38A
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS BCX38A BCX38B BCX38C TO-92 Plastic Package E BC ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL

bcx38

Contextual Info: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR ISSUE 1 - APRIL 94_ FEATURES * 100 V o lt VCEQ * 800 m A c o n tin u o u s c u rre n t * G ain o f 10K a t lc= 500m A * Ptot=1 Watt REFER TO BCX38 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS.

Contextual Info: BCX38A/B/C VCE=5V IC/IB=100 hFE - Normalised Gain VCE sat - (Volts) 1.6 -55°C 0.8 +25°C 0.6 +100°C 0.4 +175°C 0.2 0.001 0.1 1 +100°C 1.4 C B E 1.2 1.0 +25°C 0.8 0.4 ABSOLUTE MAXIMUM RATINGS. -55°C 0.2 10 0.001 IC - Collector Current (Amps) 0.01 0.1

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS BCX38A BCX38B BCX38C TO-92 Plastic Package E BC ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL

lamp planar

Abstract: BCX38 FXT614 DSA0037561
Contextual Info: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FXT614 ISSUE 1 – FEB 94 FEATURES * 100 Volt VCEO * 800 mA continuous current * Gain of 10K at IC=500mA * Ptot= 1 Watt APPLICATIONS * Lamp, solenoid and relay drivers REFER TO BCX38 FOR GRAPHS B C E E-line

100 amp npn darlington power transistors

Abstract: npn darlington TO92 BCX38 FXT38C DSA0037524
Contextual Info: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FXT38C ISSUE 1 – SEPT 93 FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp B C REFER TO BCX38 FOR GRAPHS E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

BCX38C

Abstract: BCX38A BCX38B DSA0037514
Contextual Info: BCX38A/B/C VCE=5V IC/IB=100 hFE - Normalised Gain VCE sat - (Volts) 1.6 -55°C 0.8 +25°C 0.6 +100°C 0.4 +175°C 0.2 0.001 0.1 1 +100°C 1.4 C B E 1.2 1.0 +25°C 0.8 0.4 ABSOLUTE MAXIMUM RATINGS. -55°C 0.2 10 0.001 IC - Collector Current (Amps) 0.01 0.1

Contextual Info: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR ZTX614 ISSUE 1 - APRIL 94_ I FEATURES * 100 Volt V CE0 * * 800 m A continuous current Gain of 10K at lc=500mA * Ptot=1 Watt REFER TO BCX38 FOR G RA PH S ABSOLUTE M A X IM U M RATINGS.

Contextual Info: BCX38B BCX38B Si-Epitaxial Planar Darlington-Transistors Si-Epitaxial Planar Darlington-Transistoren NPN NPN Version 2006-07-25 Power dissipation Verlustleistung 18 9 16 E BC 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case Kunststoffgehäuse TO-92 10D3

bcx38

Abstract: BCX38C BCX38B Hammer
Contextual Info: BCX38A BCX38B BCX38C NPN Silicon Planar Medium Power Darlington Transistors FEATURES • 1.5 W power dissipation • 0 .8 A continuous collector current • hFE up to 10,000 at lc = 500 mA • Fast switching DESCRIPTION The BCX38 series of silicon planar Darlington

Contextual Info: ZETEX SEM ICONDU CTOR S IbE D • c^70S7fl 000bfl7fl b ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS \ ' Z c\-2-3> NPN HIGH VOLTAGE Dice type VCBO Min VCEO Min Volts Volts •cBO , Max a t VCB nA Volts at M ilt Max v« mA V o lt* V easw ■ at lc

2N5963

Abstract: 2N5812 2N5813 2N5816 2N5817 2N5818 2N5819 2N5822 2N5823 2N5830
Contextual Info: Small Signal Transistors TO-92 Case Continued TO-92 TYPE NO. DESCRIPTION LEAD VCBO VCEO CODE (V) (V) *VCES VEBO ICBO @ VCB (nA) (V) *ICES (V) *ICEV hFE *hFE (1kHZ) TO-92-18R @ VCE @ IC VCE (SAT) @ IC Cob (V) (mA) (V) (mA) fT NF toff (pF) (MHz) (dB) *Crb *TYP

IC cbe

Abstract: 2N6426 MPS3708
Contextual Info: Sm all Signal Transistors TO-92 Case Continued TO-92 TYPE NO. FAMILY LEAD CODE h FE v CBO v CEO v EBO •CBO 8 v CBO (V) (V) (V) m •TO-92-18R MIN *VCES MIN MIN v CE (V) (V) TO-92-18R O lC VCE(S;W )® 'c <mA) (V) (mA) *hfe(1kHZ) *r c ob NF ‘ oft (PF)