AMTP25 Search Results

Contextual Info: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 1 - MARCH 94_ FEATURES * 6 0 Volt V,C E O G ain o f 10K at lc=0.5 A m p P ,o ,= 1 W att ABSOLUTE M A X IM U M RATINGS. SYM BO L PARAM ETER V A LU E U N IT v CB0 80 V Collector-Emitter Voltage

transistor tic 2260

Abstract: tic 2260
Contextual Info: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT458 ISSUE 3 -OCTOBER 1995 it FEA TU RES * 400 V o lt V CF0 CO M PLEM EN TA RY T Y P E - FM M T558 P A R T M A R K IN G D E T A IL - 45 8 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYM BO L C o lle cto r-B ase V o ltag e

Contextual Info: SOT223 PNP SIUCON PLANAR HIGH CURRENT HIGH PERFORMANCE POWER TRANSISTOR FZT968 ISSUE 3 - OCTOBER 1995_— — — FEATURES * Extremely low equivalent on-resistance; RCE(Mrt) 44mil at 5A * 6 Amps continuous current (Up to 20 Amps peak)

ZRC400

Contextual Info: PRECISION 4.096 VOLT LOW KNEE CURRENT VOLTAGE REFERENCE ZRC400 ISSUE 3 - MARCH 1998 DEVICE DESCRIPTION FEATURES The ZRC400 uses a bandgap circuit design to achieve a precision m icro p o w er voltage re fere n ce of 4.096 v o lts . T h e d e vice is available in sm all outline surface mount

Contextual Info: SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSU E 3 - NOVEM BER 1995 O_ C O M PLEM EN TA R Y T Y P E - FCX593 PA RTM A RKIN G D E T A IL - N93 ABSOLUTE MAXIMUM RATINGS. PARAMETER VALUE UNIT VCBO 120 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage

Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -M ARCH 94 FEATURES * 100 Volt VDS * A \ Ros.on,=20n m JffS Gs E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DS -100 V Continuous Drain Current at Tamtj=25°C b

bcx38

Contextual Info: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR IS S U E !-A P R IL 94_ FEATURES * 100 Volt VCE0 * 800 m A continuous current * Gain of 10K at Jc=500mA * Ptot=1 Watt REFER TO BCX38 FOR GRAPH S ABSOLUTE M A X IM U M RATINGS.

ZRC250R1

Abstract: ZRC250R01
Contextual Info: PRECISION 2.5 VOLT LOW KNEE CURRENT VOLTAGE REFERENCE ZRC250 ISSUE 3 - M A RCH 1998 DEVICE DESCRIPTION FEATURES The ZRC250 uses a bandgap circuit design to achieve a precision m icropow er voltage reference of 2.5 volts. The device is available in small outline surface mount packages,

ZRC500

Contextual Info: PRECISION 5.0 VOLT LOW KNEE CURRENT VOLTAGE REFERENCE ZRC500 ISSUE 3 - MARCH 1998 DEVICE DESCRIPTION FEATURES The ZRC500 uses a bandgap circuit design to achieve a precision m icro p o w er voltage reference of 5.0 volts. The device is available in sm all outline surface mount packages,

ZTX752 equivalent

Abstract: transistor 42-10a data BC369 FXTA92 BSS98
Contextual Info: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 1 - APRIL 94 FEA TU R ES * 170 Volt BV ds A PPLICA TIO N S * Telephone handsets ABSOLUTE MAXIMUM RATINGS. PARAM ETER SY M B O L VALUE UNIT Drain-Source Voltage V DS 170 V Continuous Drain Current at T amb=25°C

Contextual Info: PNP SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR ZTX510 ISSUE 2 - MARCH 94 FEATURES * 12 Volt V CE0 * P fT=400M H z s f E-Line T092 Compatible ABSOLUTE M A X IM U M RATINGS. SYM BO L PARAM ETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -M ARCH 94_ FEATURES * 100 Volt v DS * RDS on = REFER TO ZVN2110A FOR GRAPHS PARAMETER SYM BO L Drain-Source Voltage VDS 100 V Continuous Drain Current a tT amt5=25°C •d 320 mA Pulsed Drain Current

Contextual Info: PRECISION 2.5 VOLT MICROPOWER VOLTAGE REFERENCE ISSUE 2 - FEBRUARY 1998 DEVICE DESCRIPTION FEATURES The ZREF25 uses a bandgap circuit design to achieve a precision m icro p o w er voltage reference of 2.5 volts. The device is available in a sm all outline surface mount package,

ZVN2106A

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -M ARCH 94_ FEATURES * 60 V o lt V DS * RDS!onr2n ABSOLUTE MAXIMUM RATINGS. PA R A M ET ER SYM BO L V ALU E UNIT V DS 60 V Continuous Drain Current at T amy=25°C •d 450 mA Pulsed Drain Current

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ISSUE 2 - MARCH 94_ FEATURES * 400 Volt V,DS ^DS on = 0£2 ABSOLUTE M A X IM U M RATINGS. SY M B O L PARAMETER VALUE UNIT 400 V ta 90 mA 'd m 600 mA Gate-Source Voltage V GS ±20 V