BC860B Search Results

BC859

Abstract: BC859A BC859B BC859C BC860 BC860A BC860B BC860C BST 33
Contextual Info: BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors M arking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F BC860C = 4G _3.0_ 2.8 0.48 0.38 0.14 3 2.6 Pin configuration

Contextual Info: BC857BF.BC860BF PNP Silicon AF Transistor • For AF input stages and driver applications 2 3 • High current gain • Low collector-emitter saturation voltage 1 • Low noise between 30 Hz and 15 kHz • Complementary types: BC847BF, BC848BF BC849BF, BC850BF NPN

bc860

Abstract: bc858 BC857 BC857A BC857B BC858A BC858B BC859A BC859B BC860A
Contextual Info: BC857/BC858 BC859/BC860 SMALL SIGNAL PNP TRANSISTORS • ■ ■ ■ Type Marking BC857A 3E BC857B 3F BC858A 3J BC858B 3K BC859A 4A BC859B 4B BC860A 4E BC860B 4F SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING

BCB60

Abstract: transistor smd npn ag smd npn darlington "low noise" npn bcf70 d2 SMD TRANSISTORs pnp npn darlington bc smd H7 marking code smd marking code transistors BSV52 SMD MARKING CODE vk
Contextual Info: SMDTransistors SOT-23 Case 350mW Proelectron Series—Confd « TYPE NO. DESCRIPTION BC858B BC858C BC859 BC859A BC859B BC859C BC860 BC860A BC860B BC860C PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE

BF860

Abstract: TSFP-3 BC849BF
Contextual Info: BC857BF.BC860BF PNP Silicon AF Transistor • For AF input stages and driver applications 2 3 • High current gain • Low collector-emitter saturation voltage 1 • Low noise between 30 Hz and 15 kHz • Complementary types: BC847BF, BC848BF BC849BF, BC850BF NPN

Contextual Info: BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P transistors M arking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F BC860C = 4G Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

13c MARKING

Abstract: marking code 5y CMSH3-40 MARKING CODE 8Y CMZ5936B marking code c20a marking wc 8N Marking code CS CGDM marking code 4A
Contextual Info: Marking codes Marking Code Part Number Marking Code Part Number Marking Code Part Number 1 A BC846A 4B BC859B 8 AC CMSZ5226B 1 A8 CMSZ5250B 4C BC859C 8 B1 CMSZ5222B 1 B BC846B 4E BC860A 8 BC CMSZ5227B 1 B8 CMSZ5251B 4F BC860B 8 C1 CMSZ5223B 1 C8 CMSZ5252B

Contextual Info: BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors Marking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F BC860C = 4G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.48 0.38 i Pin configuration

d2 SMD TRANSISTORs pnp npn

Abstract: BCS59 2n2222a smd BC558B BC558C BC559 BC858B BC858C BC859 SMD marking bcw60
Contextual Info: SMDTransistors SOT-23 Case 350mW Proelectron Series—Confd « TYPE NO. DESCRIPTION BC858B BC858C BC859 BC859A BC859B BC859C BC860 BC860A BC860B BC860C PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE

BC859

Abstract: BC859A BC859B BC859C BC860 BC860A BC860B BC860C
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F

BC860

Abstract: BC859 BC859A BC859B BC859C BC860A BC860B BC860C
Contextual Info: CDU BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors M arking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F BC860C = 4G Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

Contextual Info: SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors M arking BC859 = 4D BC859A - 4A BC859B = 4B BC859C - 4C BC860 = 4H BC860A ss 4E PACKAGE OUTLINE DETAILS ALL DIM ENSIO NS IN m m BC860B = 4F BC860C = 4G Pin configuration 1 a BASE 2 = EMITTER 3 « COLLECTOR

BF860

Abstract: BC847BF BC848BF BC857BF BC858BF BC859BF BC860BF
Contextual Info: BC857BF.BC860BF PNP Silicon AF Transistor • For AF input stages and driver applications 2 3 • High current gain • Low collector-emitter saturation voltage 1 • Low noise between 30 Hz and 15 kHz • Complementary types: BC847BF, BC848BF BC849BF, BC850BF NPN

Contextual Info: r r z SGS-THOM SON Ä T f M liœ m s e îli» !» BC857/BC858 BC859/BC860 SMALL SIGNAL PNP TRANSISTORS Type M arking BC857A 3E BC857B 3F BC858A 3J BC858B 3K BC859A 4A BC859B 4B BC860A 4E BC860B 4F • SILICON EPITAXIAL PLANAR PNP TRANSISTORS ■ MINIATURE PLASTIC PACKAGE FOR

transistor 2N3906 smd 2A SOT23

Abstract: 2n3904 TRANSISTOR REPLACEMENT GUIDE BC327-40 SMD bc107 TRANSISTOR SMD CODE PACKAGE SOT23 TRANSISTOR BC337-25 PNP BC548 TRANSISTOR REPLACEMENT BC327-25 SMD TRANSISTOR BC337 SMD 2n3906 REPLACEMENT MMBT3094
Contextual Info: Small Signal Transistors Industry Standard BF722 BF723 BFN38 CZTA42 CZTA92 KSA539 KSA643 KSA733 KSC1623 KSC815 MMBT3094 MMBT3906 MMBT4401 MMBT4403 MMBTA42 ST Nearest ST Replacement Industry Standard BF720 BF721 BF720 STZTA42 STZTA92 MMBTA92 MPSA42 MPSA92 MSB709

Contextual Info: Transistors IC SMD Type BC859W,BC860W Features Low current max. 100 mA . Low voltage (max. 45 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol BC859W BC860W Unit Collector-base voltage Parameter VCBO -30 -50 V Collector-emitter voltage

bc5478

Abstract: 2n2222a SOT23 BC557 smd sot23 2n2222 sot23 BC547 smd BC547 2N2222 2n3906 sot23 2N2222 SMD SOT23 2n2907 smd 2n4401 smd
Contextual Info: SMD w COMPONENT i w i h www.microelectronoc.co.yu i i S M D S E M IC O N D U C T O R S ON M A R K IN G ^ ^ ^ e l e c t r B n ic microe@ptt.yu M A R K IN G T Y PE N U M B E R PACKAGE C O N V E R C IN A L TY PE M A R K IN G T Y PE N U M B E R PACKAGE C O N V E R C IN A L

BC846

Abstract: BC847 BC848 BC849 BC850 BC856 BC856A BC856B BC857A BC860
Contextual Info: BC856.BC860 PNP Silicon AF Transistors
For AF input stages and driver applications 3
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BC846, BC847, BC848 2 BC849, BC850 NPN 1 Type

BCX71RG

Abstract: BCW61RB bcw61rd
Contextual Info: T T T SEMI CON DUC TOR S 67 87D DE§ 4tainss DQ02353 1 r 02323 D PNP TRANSISTORS PNP Silicon Transistors Plastic Package TO-236 Marking Code - ~VcEO hpE Volts “ VcEsat at at - V C e/ - I c —Ic/—Ib - I ces at fr “ V ce Cob at -V c e /~I c CD Type

str 6707

Abstract: datasheet str 6707 str 6707 datasheet UL 2092 2108 npn transistor BC859AW Q 817 SOT323 marking 4814 ic str 6707
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 BC859W; BC860W PNP general purpose transistors Product specification Supersedes data of 1997 Jul 01 File under Discrete Semiconductors, SC04 1997 Sep 03 Philips Semiconductors Product specification PNP general purpose transistors

BC857

Abstract: BC856A BC856B BC857A BC857B BC857C BC858A BC858B BC858C BC859A
Contextual Info: SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS BC856 BC858 BC860 ISSUE 6 - APRIL 1997 PARTMARKING DETAILS COMPLEMENTARY TYPES BC856A–3A BC856 BC858C–3L BC846 BC856B–Z3B BC859A–Z4A BC857 BC847 BC857A–Z3E BC859B–4B BC858 BC848 BC857B–3F BC859C–Z4C

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

1ff TRANSISTOR SMD MARKING CODE

Abstract: smd transistor 5c sot-23 NB ad smd transistor SMD TRANSISTOR MARKING 6C SMD TRANSISTOR MARKING 5c npn smd dual diode marking code AH sot-23 BC548 TRANSISTOR SMD smd diode ZENER marking code BC marking code diode C1J SMD SMD TRANSISTOR MARKING c1p
Contextual Info: CENTRAL SENICONDUCTOR 50E D • DDDQS11 3Gb ■ CEN SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW T Y P E NO. DESCRIPTION BVCBq (VOLTS) MW BV qeo (VOLTS) MIN BVebq (VOLTS) MIN Icbo 1^ V M (nA) (VOLTS) MAX MIN CMPT918 CMPT2222A CMPT2369