AS4C14400 Search Results

Contextual Info: High Performance 1MX4 CMOS DRAM H AS4C14400 II 1M X 4 CMOS DRAM Fast page m o d e Preliminary information Features • 1 0 2 4 r e fr e s h c y c le s , 1 6 m s r e fr e s h in te r v a l • O r g a n iz a tio n : 1 , 0 4 8 ,5 7 6 w o r d s x 4 b its - R A S - o n ly o r C A S - b e fo r e - R A S r e fr e s h

Contextual Info: 4C14400.fr5 Page 209 Thursday, April 29, 1999 4:02 PM •^■1 Preliminary information AS4C14400 A 5V !M x 4 CMOS DRAM fast page mode Features • Organization: 1,04 8 ,5 7 6 words x 4 bits • High speed ■TTL-compatible, three-state I/O ■JEDEC standard packages

RAS 0510

Abstract: as4c14400-60jc AS4C14400-40JC alliance as4C14405 AS4C14405-50JC AS4C14405-60JC AS4C14400 AS4C14405 4C14400-70 alliance promotion
Contextual Info: High Performance 1Mx4 CMOS DRAM AS4C14400 AS4C14405 1M-bit × 4 CMOS DRAM Fast page mode or EDO Preliminary information Features • 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 words × 4 bits • High speed - RAS-only or CAS-before-RAS refresh

Contextual Info: H i Il P e r f o r m a I M x-I ih i - \ S 4 1 4 4 00 H i l ( MOS DRAM i M X 4 C M O S D R A M ( l .isi pa” <- n m ilr i P relim inar ' inform ation Features • 1024 refresh cycles, 16 m s refresh interval • O rganization: 1 ,0 4 8 ,5 7 6 w ords x 4 bits

AS4C256K16F0-60JC

Abstract: AS7C164-20PC AS7CI64-20JC AS4LC1M16ES-50TC 120TC 28K1 AS4C1440S 1SPC AS29F040-120TC as7c3
Contextual Info: í U' u i M 11; ! 1Ì ! ! i r 1 ¡ l i ü ’! 4 • -'¡si. í J Mij ! ; , t ‘ i M U I : i Synchronous SRAM part numbering system AS7C X XXXX Voltage: Blin k cram 3 25 18 (X -X X XX = 5V C M O S =3.3V CMOS =2.5V CMOS = 1.8V CMOS Density and organization

144007

Contextual Info: H i y h P î 'H « ir \ kH ' : 4 -M () \ix - ( ’ \ 1( l Mi ^ l M O S ! 5K \ \ 1 ( t a s i P j ij i Prelim inary information Features • O r g a n iz a tio n : 1 ,0 4 8 ,5 7 6 w o r d s x 4 b its • 1 0 2 4 r e f r e s h c y c le s, 16 m s r e f r e s h in te rv a l

AS4C14400

Abstract: 4C14400-60
Contextual Info: H ig h P e rfo rm a n c e lM x 4 _ II CM OS DRAM A S 4C 14400 JS Iw 1M x 4 CM O S DRAM Fast p a g e m o d e Prelim inary information Features • O rganization: 1,0 4 8 ,5 7 6 w o rd s x 4 bits • H igh speed • 1024 refresh cycles, 16 m s refresh interval

130003

Contextual Info: J-1i 1*h P< ! t 1 t M 1,1 il! . ' ‘•'4! I 44 1(1 mn il 1 NÌ>- ‘ | l ( \ K i 1- ! H ' ■ . V! i j I i R A \ I M M I .| ; ’ . ' 1 s j i. | ! Preliminary information Features • 1 0 2 4 re fre s h c y d e s , 16 m s re fre s h in terv al - RAS-only o r CAS-befoie-RAS refresh

SRAM 64KX8 5V

Contextual Info: A Product Guide "641 Ali densities is bits TÎÎT 256K- —I.8V /2.S V /3.3V — 64KX16 ! -3.3V 32ÏX 8 asynchronous asynchronous in x: 8Kx8 I 32KX8 64KX8 32KX16 128KX8 I j!28gxl6| 64KX16 64KX8 128KX8 64KXJ6 32XX16 -3.3V 32KX32 synchronous Memories- -ED O

SRAM 64KX8 5V

Abstract: 128U K SRAM 512*8 SRAM 3.3v 1Mx8 SRAM edo dRAM AS7C40
Contextual Info: Pagenumber Produci Cross references. Il Ordering information. 13 AS7C164

AS4C1M16FS

Abstract: 1Mx16 flash 3.3v 1Mx8 SRAM
Contextual Info: Product number AS29F002 256Kx8 5V boot sector Flash. 433 AS7C181024LL 128Kx8 1,8V Intelliwatt SRAM. 129 j4S29F03 0 128KX8 SV equal sector Flash. 423

3d graphics

Contextual Info: H .irl lisi ¡ i l ” \ l | l i i i l ) l i ( ni pur l l i s ! i i uj Product number Product density/description . Page number AS29F010 128Kx 8 equal sector Flash. 237

32Kx16

Abstract: Intel EEPROM 32kx8
Contextual Info: Alliance Semiconductor Memories SRAM 64K - 3 . 3 Volt All densities in bits 512K 1M 256K 32Kx8 A sy n ch ro no u s/ burst •5 Volt X 8Kx8 X 64KX8 1 32KX16 128KX8 X 32KX8 64KX8 X 32Kx9 i 32KX16 2M 4M 64KX32 512KX8 64KX16 X 32KX32 256KX16 X 128Kx8 X 256KX4

Contextual Info: H ig h P e rfo rm a n c e lMx4 CMOS DRAM A S4C 14400 h II , 1 1M x 4 CMOS DRAM fast page m ode Prelim inary inform ation Features • 1 0 2 4 r e f r e s h c y c le s , 1 6 m s r e f r e s h in te r v a l • O r g a n iz a t io n : 1 , 0 4 8 ,5 7 6 w o r d s x 4 b its