AS29LV002 Search Results

Contextual Info: Preliminary information •■ AS29LV002 3V 256Kx8 CMOS Flash EE PROM Features • O rganization: 256K x8 • Sector architecture - O ne 16K; tw o 8K; one 32K; and three 64K byte sectors - Boot code sector architecture— T top or B (bottom ) - Erase any com bination o f sectors or full chip

Contextual Info: H igh p erform ance 256KX8 3V CMOS Flash EEPROM H AS29LV002 A 2S6KX8 CMOS Flash EEPROM Prelim inary inform ation Features • O rg a n iz a tio n : 256 K X 8 • S ecto r a rc h ite c tu re - O ne 16K; tw o 8K; one 32K; and three 64K byte sectors - Boot code sector architecture— T top o r B (bottom )

29LV002-100

Abstract: 555B timer 29LV002-150 555B AS29 DAD11
Contextual Info: High perform ance 256KX8 3V CMOS Flash EEPROM AS29LV002 X 2 5 6K X 8 CM OS Flash EEPROM Preliminary information Features • O rganization: 256K x8 • Sector architecture - One 16K; two 8K; one 32K; and three 64K byte sectors - Boot code sector architecture— T top or B (bottom)

LH536

Abstract: AS29X 29LV002-150 kje z1
Contextual Info: Preliminary information Features • O rg a n iz a tio n : 2 5 6 K X 8 • S ecto r a rc h ite c tu re - O ne 16K; tw o 8K; one 32K; and three 64K byte sectors - Boot code sector architecture— T top or B (bottom ) - Erase any com bination o f sectors or full chip

AS4C256K16F0-60JC

Abstract: AS7C164-20PC AS7CI64-20JC AS4LC1M16ES-50TC 120TC 28K1 AS4C1440S 1SPC AS29F040-120TC as7c3
Contextual Info: í U' u i M 11; ! 1Ì ! ! i r 1 ¡ l i ü ’! 4 • -'¡si. í J Mij ! ; , t ‘ i M U I : i Synchronous SRAM part numbering system AS7C X XXXX Voltage: Blin k cram 3 25 18 (X -X X XX = 5V C M O S =3.3V CMOS =2.5V CMOS = 1.8V CMOS Density and organization

AS4C1M16FS

Abstract: 1Mx16 flash 3.3v 1Mx8 SRAM
Contextual Info: Product number AS29F002 256Kx8 5V boot sector Flash. 433 AS7C181024LL 128Kx8 1,8V Intelliwatt SRAM. 129 j4S29F03 0 128KX8 SV equal sector Flash. 423