A1012 Search Results

a1012 transistor

Abstract: transistor A1012 a1012 a1012* transistor
Contextual Info: UTC A1012 SILICON PNP EPITAXIAL TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The A1012 is designed for high current switching application. 1 FEATURES *Low collector saturation voltage Vce sat =-0.4V(max.) at Ic=-3A *High speed switching time tstg=1.0µs(Typ.)

transistor A1012

Abstract: a1012 transistor UTC A1012 A1012
Contextual Info: UTC A1012 SILICON PNP EPITAXIAL TRANSISTOR SILICON PNPEPITAXIAL TRANSISTOR DESCRIPTION The A1012 is designed for silicon current switching application. 1 FEATURES *Low collector saturation voltage Vce sat =-0.4V(MAX.) at Ic=-3A *High speed switching time Tstg=1.0us(Typ.)

Contextual Info: UTC A1012 SILICON PNP EPITAXIAL TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The A1012 is designed for high current switching application. 1 FEATURES *Low collector saturation voltage Vce sat =-0.4V(max.) at Ic=-3A *High speed switching time tstg=1.0µs(Typ.)

Contextual Info: Serial-Port 16-Bit SoundComm Codec AD1843 ANALOG DEVICES FEATURES Single Chip Integrated Speech, Audio, Fax and Modem Codec Highly Configurable Stereo ZA ADCs and Quad XA DACs Supports V.34, V.32bis, and Fallback M odem Standards As W ell As Voice Over Data

a1012 transistor

Abstract: transistor A1012 A1012 a1012* transistor IC 4047 BTA1012E3 C601E3 BTA1012 A-101-2 data sheet of IC 4047
Contextual Info: CYStech Electronics Corp. Spec. No. : C601E3 Issued Date : 2004.07.26 Revised Date : Page No. : 1/4 Low Vcesat PNP Epitaxial Planar Transistor A1012E3 Features • Low VCE sat , VCE(sat)=-0.4 V (typical), at IC / IB = -3A / -0.15A • Excellent DC current gain characteristics

Contextual Info: S G S -1 H 0 M S 0 N 5 7 . » « m i » « ® M28F210 M28F220 2 Megabit x8 or x16, Block Erase FLASH MEMORY PRELIMINARY DATA DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP56 and S044 MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or

transistor d468

Abstract: D468 transistor transistor D468 circuit diagram application transistor A1012 a1012 transistor A1012 thermistor RY 126 BBV transistor 4 pin battery charger laptop 12v d468
Contextual Info: AIC1782 Dual-Battery Charge Controller FEATURES DESCRIPTION Quick and Easy Testing for Production. Sequential Charging Control of Two NiMH/NiCd Battery Packs. Reliable Sequential Fast Charge Control of Dual NiMH and/or NiCd Battery Packs, even with a Fluctuating Charging Current.

ecg semiconductors master replacement guide

Abstract: ecg master replacement guide mkl b32110 siemens mkp B32650 c945 p 331 ks transistor IC,MASTER master replacement guide Kennlinie KTY 10-6 siemens b32110 A2005 transistor
Contextual Info: Liebe Schuricht-Kunden, Ihre Zufriedenheit ist unser größtes Anliegen. Aus diesem Grunde versuchen wir, Ihnen Informationen und Ware stets zum richtigen Zeitpunkt verfügbar zu machen. Das gilt insbesondere auch für die Produkte der Siemens AG mit den drei

ga10-103k

Abstract: GA10-123k
Contextual Info: GA10 SERIES GOWAIMDA • y MINIATURE HIGH CURRENT CHOKES .630 in 16.002 mm. _ MAX. ^ 38 Standard inductance values, other non-standard values and tolerances also available. Package - heat-shrinkable, flame retardant tubing with high resistivity Ferrite coil form.

Contextual Info: MicroPower Direct Ultra-Miniature, 10W Wide Input Range DC/DC Converters A1000RW Series Key Features 10W Output Power Miniature DIP Package 1.5 kVDC Isolation 2:1 Input Range Industry Standard Pinout Low Cost Electrical Specifications Specifications typical @ +251C with nominal input voltage & rated output current, unless otherwise noted. Specifications subject to change without notice.

transistor D468 circuit diagram application

Abstract: thermistor RY 126
Contextual Info: AIC1782 Dual-Battery Charge Controller FEATURES DESCRIPTION Quick and Easy Testing for Production. Sequential Charging Control of Two NiMH/NiCd Battery Packs. Reliable Sequential Fast Charge Control of Dual NiMH and/or NiCd Battery Packs, even with a Fluctuating Charging Current.

ST24164

Abstract: AN404 ST24 ST25 ST25164
Contextual Info: r z T S G S -T H O M S O N ST24164 * 7 #» E » l g » IlL iO T ( ò K ! lD ( g i ST25164 SERIAL ACCESS 16K (2K x 8) EEPROM • 1 MILLION ERASE/W RiTE CYCLES with OVER 10 YEA RS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V for ST24164 version

Contextual Info: ZZZ10LPS APPLICABLE P.C.B. Jfc » REV. D I M E N S I O N R E F. B DATE K R ñ § D E S C R IP T IO N DON NO. a =ü CHfC. DR. * M APPD . * & APPD. ( ‘ ON QNIMVfclCD-i-gmia 0. 8 (PATTERN P R O H IB IT IO N AREA) NOTE 1. FINISH N U M B E R IS M A R K E D AS INDICATED. (SEE T A B L E 1)

a1273 transistor DATA

Abstract: a1273 transistor a1273 transistor scheme transistor A1267 a1273 80188 Programmers Reference Manual A1266 transistor a1271 transistor A1273 transistor A1270
Contextual Info: 80C186EB/80C188EB Microprocessor User’s Manual 80C186EB/80C188EB Microprocessor User’s Manual February 1995 Information in this document is provided solely to enable use of Intel products. Intel assumes no liability whatsoever, including infringement of any patent or copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions

siemens 3tb44

Abstract: 3tb52 SIEMENS 3TH 82 catalog for 3RT series contactor* siemens 3TH43 siemens 3th42 3TH42 siemens contactor IEC 60947 VDE 0660 3TB44 siemens magnetic contactor
Contextual Info: 3RT, 3RH, 3TB, 3TC, 3TH, 3TK Contactors for Special Applications Contactors with Extended Tolerance 0.7 . 1.25 x Us , for Railway Applications 3RT10 motor contactors, 5.5 . 45 kW DC operation • DC solenoid system Screw terminals For screw and snap-on mounting onto standard mounting rail

A1048

Contextual Info: American Power Design, Inc. "The best high voltage design solution" A10 SERIES 10 WATT HIGH VOLTAGE DC/DC CONVERTERS FEATURES * Customer Selects Output Voltage * * * * * * * Outputs to 200 Vdc Low Profile High Regulation Ultra Wide Input Ranges 1000 Vdc Output Isolation

Contextual Info: American Power Design, Inc. "The best high voltage design solution" A10 SERIES 10 WATT HIGH VOLTAGE DC/DC CONVERTERS FEATURES * Customer Selects Output Voltage * * * * * * * Outputs to 200 Vdc Low Profile High Regulation Ultra Wide Input Ranges 1000 Vdc Output Isolation

Contextual Info: DPF600 SERIES Dual output Recom m ended for new deslgn-ins • ■ ■ ■ ■ ■ Power factor correction Meets proposed IEC555-2 limits 85VAC to 264VAC universal Input UL, CSA, TÜV and BABT approvals pending Hot-pluggable Built-in OR-ing diodes for true N+1 redundancy

29V040

Contextual Info: S G S -1 H 0 M S 0 N 6 fflD ^©HlLll g'ìnE(S R!lfl(gi M29V040 LOW VOLTAGE SINGLE SUPPLY 4 Megabit (512K x 8, Sector Erase) FLASH MEMORY PRODUCT PREVIEW FAST ACCESS TIME: 120ns 3.3V ± 0.3V SUPPLY VOLTAGE for PROGRAM and ERASE OPERATIONS 3.3V ± 0.3V SUPPLY VOLTAGE in READ

Contextual Info: n r z *¿7 i. M28F411 M28F421 S C S -T H O M S O N R 0 ö » ilL I g fM O ( g i CMOS 4 Megabit (x 8, 7 Blocks FLASH MEMORY ADVANCE DATA • SMALL SIZE PLASTIC PACKAGE TSOP40 ■ MEMORY ERASE in BLOCKS - One 16K Byte Boot Block (top or bottom lo­ cation) with hardware write and erase pro­

tower pro sg 90

Contextual Info: SGS-THOMSON Æ M28F410 M28F420 ÍL [ fï C M O S 4 Megabit x8 or x16, 7 Blocks FLASH M E M O R Y ADVANCE DATA DUAL x8 andx16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP56 and S044 MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and

ty9000

Abstract: TY9000A 1g nand mcp TY9000A000CMGF SD4051 TY9000A000 tc58dyg02f2 nand toshiba ty9000 FBGA149 toshiba mcp
Contextual Info: TY9000A000CMGF TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS TENTATIVE Low Power SDRAM and Nand E2PROM Mixed Multi-Chip Package Lead-Free DESCRIPTION The TY9000A000CMGF is a mixed multi-chip package containing a 536,870,912-bit Low Power Synchronous

MCP 256M nand toshiba

Abstract: TY80009000AMGF toshiba mcp FBGA149 toshiba mcp nand 512M nand mcp nand sdram mcp TOSHIBA M9
Contextual Info: TY80009000AMGF TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS Low Power SDRAM and Nand E2PROM Mixed Multi-Chip Package Lead-Free DESCRIPTION The TY80009000AMGF is a mixed multi-chip package containing a 268,435,456-bit Low Power Synchronous DRAM and a 553,648,128-bit Nand E2PROM. The TY80009000AMGF is available in a 149-pin BGA package

ty9000

Abstract: TY9000A ty9000a400 MCP 256M nand toshiba TY9000A400BMGF 1g nand mcp toshiba mcp 512M nand mcp ty90 MCP 1g nand toshiba
Contextual Info: TY9000A400BMGF TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS Low Power SDRAM and Nand E2PROM Mixed Multi-Chip Package Lead-Free DESCRIPTION The TY9000A400BMGF is a mixed multi-chip package containing a 536,870,912-bit 268,435,456-bit x 2devices