BTX94
Abstract: BTX94-600U BTx94 1200 ST BTW48 sot 23 3d SOT-25 0b rbi-e BT138 BTW37 T0220AB
Contextual Info: Thyristors and triaos abridged data of principal types book 1 part 5 TRIACS The type number suffix is the VD pM rating Ratings • t (RMS) Tmb * 85°C I trm (A) (A ) I t s m 1) l 2t t - 10ms {A ) dlT dt (A 2s) (A //is) Characteristics dVD V qt d t m8X normal co m m u tatin g m in.
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bt138t0-220abbtw37btw43+11t0220abbtw41btw481200ubtx94btx94-600ubtx94 1200st btw48sot 23 3dsot-25 0brbi-e
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BY223
Abstract: BY277 BYX50-200R BYX50-200 bridge RECTIFIER GI by277 750r diode BY223 600R 800R BYW19
Contextual Info: Silicon rectifier diodes and bridge m odules fast recovery rectifier diodes Type No. O utline Drawing reference A (V) (V) (A ) SOD-38 5* 1500 1500 10 20 SOD-38 7 800 1000 800 800 20 7 50 100 150 50 100 150 DO-4 B1 7 200 300 350 600 SOD-38 7 600R 750R SOD-38
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by223od-38byw19byw29+11tbyx71s0d38by277t1n3889byx50-200rbyx50-200bridge rectifier giby277 750rdiode by223600r800r
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BAV46
Abstract: bat59 Pin connection of bk 1085 BAT39 BAT52 BAV72 BAT10 BAW96 BAV71 BAT50R
Contextual Info: Microwave solid state mixer diodes M axim um Operating Frequency GHz Type No. book 1 part 8 Typical Noise Figure (dB) Typical Impedance 8.5 750 O perating Temperature Z if Drawing i'e fe re n c e O u tlin e <oc> (Í2) GERMANIUM POINT CONTACT 40 AAY34 - 5 5 t o +100
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aay34s0d-42bat10sat11+13bat39cv7762bat39aod-42bat50rso-26bav46bat59pin connection of bk 1085bat52bav72baw96bav71
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AC128 transistor
Abstract: bc649 BC646 AC188 ac187 BCS48 bc660 AC188 transistor transistor AC128 AC188 AC187
Contextual Info: Transistors germanium low/medium power transistors Dwg. ref. O utline •b z -0 ?î book 1 parts 1 and 2 V CBO V V ceo (V) M axim um Ratings lCM IC(AV) (A ) (A) Ptot at 25PC (°C> <mW) Tj m in. at •c fT ty p . (m A i (MHz) 2.5 h FE max. Special Features
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at25pcac128ac187ac188+142n13032n13062n13072n1309h--22-crt6-25ac128 transistorbc649bc646ac188 ac187bcs48bc660ac188 transistortransistor ac128
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tube az2
Abstract: 2n2389 2n2906 sis BSS68 BSW41 2N2369 2N2906 to92 BFX34 BSS38 BSW41A
Contextual Info: Transistors Type No. g s 3 o Drawing reference silicon low/medium power switching transistors book 1 parts 1 and 2 VCEJO VcEO <V V) Maximum Ratings IcM lc(AV) (mA) ImA) Hfe min. max. Ptot at 25°C (°C) <mW) Tj at •c fT VcE(sat) min. max. (mA) (MHz) (V)
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bss38bsw41at0-18bsx19+13bsx20bsx21bsy95ah--22-crt6-25tube az22n23892n2906 sisbss68bsw412n23692n2906 to92bfx34
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bc657
Abstract: BC566 BC659 BC159 BC463 BCX36 BCY34A BC167 BC462 transistor bc668
Contextual Info: Transistors P-N-P silicon lo w /m ed iu m pow er transistors book 1 parts 1 and 2 Type No. 1 3 o e ! VcBO V ce.0 V (V) M axim um Ratings ' cm Ic <AV) (m AJ Tj P«ot (m A) a t 2 5 °C <°C) (mW) 200 200 50 200 3 60 100 125 3 50 h FE m in. m ax. at le (m A)
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bcy70bcy71bcy72bfx37+13bc167ot-25kbc158bc15915khzbc657bc566bc659bc463bcx36bcy34abc462 transistorbc668
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DIODO LN4148
Abstract: A2 diodo zener diodo zener 5.1 B2 diodo 1n4148 diodo s4 diodo s4 81 6.8 B2 diodo a52 zener diode diodo 72 DIODO LED
Contextual Info: Microminiature devices diodes book 1 part 3 Outline SO T-23 Type No. | | » Q £ BAV70 X4 BAW66 X5 BAV99 X6 Description Common cathode double diodo Common anode double diodo Two diodes i n series intended for high speed switching. Vrrm Ifrm Max. Reverse Recovery Time, t rr
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ot-23bav70bav991n4148+14200mwbzx84h--22-crt6-25diodo ln4148a2 diodo zenerdiodo zener 5.1 b2diodo 1n4148diodo s4diodo s4 816.8 b2 diodoa52 zener diodediodo 72diodo led
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BZX93
Abstract: BZX90 BY409 BYX35 BY209 BZX91 BY209 A high voltage rectifier diode 1N82S BZX90 3.3
Contextual Info: Diodes low power high voltage diodes I fiav max. Tamb = 3 5°C T oh= 50 C <mA) m A) V rwm max. <kV> Type No. Description 2.5 - B Y182 12 E.H .T. rectifiers in plastic envelopes. 2.5 - B Y 209 11.5 E .H .T. soft-recovery re ctifie r diode. 2,5 - B Y 409
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by209by409byx35byx90+12byx91-90k-120k-150kh--22-crt6-25bzx93bzx90bzx91by209 ahigh voltage rectifier diode1n82sbzx90 3.3
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BD139 heat sink
Abstract: BD133 BD23B box78 bux87 B0137 BF468 BD232 bzw86 BD136
Contextual Info: Transistors silicon plastic-encapsulated transistors book 1 parts 1 and 2 Type No. N-P-N VcBO VcEO P-N-P V Outline TO-126 M axim u m Ratings •CM IctAV) (V ) (A ) (A) T| (°C> Hfe at fT Vcasat) m in. m ax. Ic m in. m ax. Ptot Tmb= 25 C (W) Im A) (M H z) (V)
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o-126bf468bf470bf457+11bf459bd232bd136b0137h--22-bd139 heat sinkbd133bd23bbox78bux87bzw86
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BCX33
Abstract: BCX32 BCX31 BCX34 BFQ36 2N1711 Data Sheet BC337 BC338 BFX84 BFX85
Contextual Info: Transistors N-P-N silicon low/medium power transistors book 1 parts 1 and 2 cont. Type No. V c □ O o> ^ Ï o M axim um Ratings Icm I cjavi vceo V ceo (V) (V ) (A) (A) hpE Ptot m in. max. at 25°C <°C) (mW) 50 45 1.0 0.5 150 625 100 30 25 150 730 Ti fT
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bc337bc338bcx31ot-25+8bcx32bcx33bcx34bfx84bfx85h--22-bfq362n1711 data sheet
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C5VI ezx79
Abstract: C9VI C7V6 bs9305n041 zener c7v6 C5VI BS9305 BZX79 BZY88 0B8 diode zener
Contextual Info: Silicon voltage regulator diodes low pow er book 1 part 3 400mW Tamb= so°c ± 5%voltage tolerance. Outline DO-35 Drawing reference H Measured at Test I Max. Voltage <V> Typ. Temp. Coefficient (mV/°C) Test lz (m A) Max I r at V r (V» Type No. B2X79 Nom. Zener
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400mwdo-35bzx79h--22-+10crt6-25c5vi ezx79c9vic7v6bs9305n041zener c7v6c5vibs9305bzy880b8 diode zener
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BT 140
Abstract: by225 100 BY225 BY224 BY179 BYW47 bridge RECTIFIER GI BZW86 BYW44 BYW46
Contextual Info: Silicon rectifier diodes and bridge modules bridge modules single phase book 1 part 4 DESIGN TYPES OUTPUT INPUT Type No. Drawing reference w I (RMS) (Vi V IRM V IWM •iSM *0(AV> lORM (V) (V) (A) (Al (A) BY 164 BO 42 120 60 25 1.4 5 BY 225 -1 0 0 »200 BR
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by225by179by224byw44+9byw46byw48byw47h--22-crt6-25bt 140by225 100bridge rectifier gibzw86
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DIODE BZW70
Abstract: SOD-18 bzw70 BZW91 BZW70 33 BZW86 SOD-51 BZW70/24
Contextual Info: Silicon surge suppressor diodes selection guide book 1 part 4 S ta n d -o ff v o lta g e V sq pulse 6.2 7.5 8.2 - P o la rity 40QW BZW70 SO D -18 Norm. 5kW BZW91 DO-5 Both D O -30 Both 13kW BZW86 N orm al p o la rity = ca th o de to stu d ; reverse p o la rity (R ) = a no de to stud.
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bzw70od-18bzw91bzw86+8do-30h--22-crt6-25diode bzw70sod-18bzw70 33sod-51bzw70/24
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SOT-23 X1
Abstract: BC1088 BFR63 BFR94 BCX66 BFQ18 BFT26 bd135 BD139 heat sink BFT92
Contextual Info: Microminiature devices transistors primarily intended for hybrid, thin and thick film circuits _ w Type No. = £ g 3 J I VCB0 | « Maximum Ratings Vceo IC|*V T. O a ! I V I Im A I IV I book 1 parts 1 and 2 hf t Ptg min. at 25 C <°C) Im W I
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bcw31rbcw32rbcw33rot-23+15bc108abc108bbc108cbcw71rbcw72rsot-23 x1bc1088bfr63bfr94bcx66bfq18bft26bd135bd139 heat sinkbft92
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BLX14
Abstract: SOT-48 BLX88 BLX66 BLY93 BLY94 BLY33 BLY34 2N3375 810BLY transistor
Contextual Info: Transistors n-p-n r.f. power transistors book 1 parts 1 and 2 - § Type No. Maximum Ratings ^b o v ceo *cm ° K hFE 'ciav I ® £ % T* at Ptot m in - m a x - lc f r VcE sat> m ' n* m a x - at 'c Po ,8 *• GP at ty p . f at V cc Tm£ “ (V) (V) IA)
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810bly/a8lx13blx14bly33+10bly34h--22-crt6-25sot-48blx88blx66bly93bly942n3375810bly transistor
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BU133
Abstract: BDY96 BU208 BU208A BU209A 2N3056 BU206 bdy97 BU326 BD182
Contextual Info: Transistors silicon n-p-n power transistors book 1 parts 1 and 2 VobO Maximum Ratings V ceo *CM IctAVl O £ V (V ) BDY38 AR3 60 40 6 BD181 BD182 BD163 AR 2 55 70 65 45 60 80 15 Type No. il (A ) (A ) (°C) Ptot Trnb“ 25 C <W) max. « le at f T VcE(Mt) min. max. lc
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bdy38bd182bd183bdy20+142n3056bux80bux811000tbdx91bdx93bu133bdy96bu208bu208abu209abu206bdy97bu326
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transistor NPN 3D SOT 153
Abstract: BRY39 BCY87 TAG thyristor BFR49 si controlled tetrode switch BRY3 BCY88 BCY89 BR101
Contextual Info: Transistors m icrowave transistors Type No. M L 1 5/2 B M L 1 5/4 B Drawing reference VCBO max. V N-P-N transistor fo r am plifiers up to S—band frequencies AN 20 0.025 N-P-N L —band p ow er transistors intended fo r com m on e m itter operation in class AG o r B
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bfr49ml15/2bml15/4b0-26v+11bcy87bcy88bcy89h--22-crt6-25transistor npn 3d sot 153bry39tag thyristorsi controlled tetrode switchbry3br101
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fuji pxz4
Abstract: wiring diagram contactor 220v.ac PXZ4 Alcohol detection with vehicle controlling CTL-6-S CTL-12-S36-8 TP311S TP28X Fuse 250V 1A pxz4-ray1-4v
Contextual Info: MODEL CONFIGURATION PXZ SERIES 1 P X Z Operation Manual PID Autotune Controllers Featuring Fuzzy Logic Front panel size 1/16 DIN 1/8 DIN 72mm 1/4 DIN Code 4 5 7 9 Kinds of input Thermocouple °C Thermocouple (°F) RTD/Pt100 (°C) RTD/Pt100 (°F) 4-20mA DC, 1-5V DC
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rtd/pt1004-20ma0-20ma59min+12dsp3-32dsp3-64fuji pxz4wiring diagram contactor 220v.acpxz4alcohol detection with vehicle controllingctl-6-sctl-12-s36-8tp311stp28xfuse 250v 1apxz4-ray1-4v
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BB106
Abstract: BA280 BB205B BB205 diode ba280 BB205G BA102 sod-23 SOD-52 DIODE BA243
Contextual Info: Diodes book 1 part 3 silicon whiskerless diodes Type No. £ Description 3 O Max. Reverse Recovery Tim e a c f a V rrm I frm Ir avi V (m A ) (m A | Cdmax V f (pF) (V ) m ax a t Ip trr If <mAl (ns) (m A ) Vr IV ) Hl ( f i) fa {m A) BA314 Low voltage stabiliser
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ba314do-35ba316ba317+14ba318bav10bav18bav19bb106ba280bb205bbb205diode ba280bb205gba102sod-23sod-52diode ba243
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B0845
Abstract: B0847 BDX45 B0682 B0848 BDX67 B0646 BD676 bdx65 BDX66
Contextual Info: Transistors darlington transistors Type No. N -P -N 800m W s s O P -N -P « • 5 Q BSS60 V (V) (A) (A l Tj h fe min. (°C> at Ic (A) fi VcEiwt) typ. max. (MHz) TO—39 AV3 60 -6 0 80 -8 0 80 -1 0 0 60 -4 5 60 -6 0 80 -8 0 2.0 1.0 200 2000 0.5 _ TO—126 BE
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800mwbss60bss51bss61+14bss52bss62bdx42bdx45bdx43b0845b0847b0682b0848bdx67b0646bd676bdx65bdx66
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CV8805
Abstract: BY206 diode CV8308 SOD-18 BYX94 BY227 diode BY207 Diode 1N4007 DO-7 Rectifier Diode BYX10 diode BY227
Contextual Info: Diodes silicon picoampere diode book 1 part 3 and 4 BAV45 Description I frm m A < i Type No. E xtrem ely lo w leakage and lo w capacitance diode. O utline T O —18. Dwg. ref. A T 5 35 I r at V r 5 (pA ) 100 I r at V r 20 (pA ) max. lF (m A) (V ) Vf at I f
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bav45by206do-14by207+11h--22-crt6-25cv8805by206 diodecv8308sod-18byx94by227 diodediode 1n4007 do-7 rectifier diodebyx10diode by227
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byx22
Abstract: byx22 1200 76F7 BYX42-600R bridge RECTIFIER GI 600R BYX42
Contextual Info: Silicon rectifier diodes and bridge modules book 1 part 4 general purpose rectifiers RA TING S O utline Type No. § B Y X 22 - Drawing reference 200 400 600 800 DO-1 A3 I r a V V rrm V rwm I frm Ifs m 1) A ) 1.4 (V) (V) (A) (A ) 200 200 400 600 800 15 200
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byx22tbyx49soo-38tbyx38+12tbyx98tbyx72od-38tbyx42h--22-crt6-25byx22 120076f7byx42-600rbridge rectifier gi600rbyx42
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BF480
Abstract: BF194 BF196 BF181 BF195 bf197 BF450 BF194 pins Bf490 BF362
Contextual Info: Transistors silicon p-n-p pow er transistors book 1 parts 1 and 2 Drawing reference Outline: TO-3 V» (V (A ) (A ) -6 0 -8 0 -1 0 0 -6 0 -8 0 12 8 h FE Ptot m in . m ax. Trnb= 25 C <°C) m at f y VcE(sat) m in. m ax. lc at lc *8 (A ) (M Hz) (V» (A) (A)
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bdx92bdx91bdx94bdx93+16bdx96bdx95bf115bf180h--22-crt6-25bf480bf194bf196bf181bf195bf197bf450bf194 pinsbf490bf362
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OA90 diode
Abstract: OA90 germanium diode oa47 diode OA95 diode diode aa119 Germanium Diode OA91 DIODE OA95 AA119 DIODE OA90 OA91
Contextual Info: Diodes Milliard diodes are supplied bandoliered. Exceptions are noted below. Bandolier packing DO-7 D O -35 SOD-17 7000 9000 9000 F o r fu rth e r details conta ct M illia rd House. germanium point contact diodes book 1 part 3 Outline DO-7 Drawing reference D1
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do-35od-17aa119h--22-+10crt6-25oa90 diodeoa90 germanium diodeoa47 diodeoa95 diodediode aa119germanium diode oa91diode oa95diode oa90oa91
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